Patents by Inventor Hyuck-Sun Kwon

Hyuck-Sun Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9626259
    Abstract: A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: April 18, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwan-Jin Yong, Donghyun Song, Janghwan Kim, Young-Goo Ko, Hyuck-Sun Kwon, Taek-Sung Kim, Kwang-Ho Kim, Byungjin Ahn, Dongjin Lee, Byungse So, Jong-Gyu Park, Kyoungsub Oh, Kwan-Jong Park, Jong-Soo Seo, Tae-Hwa Yoo, Min-Ho Kim
  • Patent number: 9348521
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: May 24, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-Bin Yoon, Yeong-jae Woo, Dong-gi Lee, Kwang-Ho Kim, Hyuck-Sun Kwon
  • Patent number: 9037778
    Abstract: A method and apparatus to interface a semiconductor storage device and a host in order to provide performance throttling of the semiconductor storage device. In the method, the semiconductor storage can receive a setting request command from the host. The semiconductor storage device sets a performance throttling parameter to a particular value in response to the setting request command. The semiconductor storage device can send to the host a setting response signal indicating completion of the setting of the performance throttling parameter.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG Electronics Co., Ltd.
    Inventors: Han Bin Yoon, Dong Gi Lee, Hyuck-Sun Kwon
  • Publication number: 20150032948
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.
    Type: Application
    Filed: October 10, 2014
    Publication date: January 29, 2015
    Inventors: Han Bin YOON, Yeong-Jae WOO, Dong Gi LEE, Young Kug MOON, Hyuck-Sun KWON
  • Publication number: 20150026516
    Abstract: A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).
    Type: Application
    Filed: July 22, 2014
    Publication date: January 22, 2015
    Inventors: Hwan-Jin YONG, Donghyun SONG, Janghwan KIM, Young-Goo KO, Hyuck-Sun KWON, Taek-Sung KIM, Kwang-Ho KIM, Byungjin AHN, Dongjin LEE, Byungse SO, Jong-Gyu PARK, Kyoungsub OH, Kwan-Jong PARK, Jong-Soo SEO, Tae-Hwa YOO, Min-Ho KIM
  • Publication number: 20150019801
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.
    Type: Application
    Filed: October 2, 2014
    Publication date: January 15, 2015
    Inventors: Han Bin YOON, Yeong-Jae WOO, Dong Gi LEE, Kwang Ho KIM, Hyuck-Sun KWON
  • Patent number: 8862806
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state, and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: October 14, 2014
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Han Bin Yoon, Yeong-Jae Woo, Dong Gi Lee, Young Kug Moon, Hyuck-Sun Kwon
  • Patent number: 8862807
    Abstract: A semiconductor storage device (SSD) and a method of throttling performance of the SSD are provided. The method can include includes gathering at least two workload data items related with to a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: October 14, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han Bin Yoon, Yeong-Jae Woo, Dong Gi Lee, Young Kug Moon, Hyuck-Sun Kwon
  • Patent number: 8856424
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device, and a controller configured to receive a write command from a host and program and to write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Han Bin Yoon, Yeong-Jae Woo, Dong Gi Lee, Kwang Ho Kim, Hyuck-Sun Kwon
  • Patent number: 8806271
    Abstract: A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwan-jin Yong, Donghyun Song, Janghwan Kim, Young-Goo Ko, Hyuck-Sun Kwon, Taek-Sung Kim, Kwangho Kim, Byungjin Ahn, Dongjin Lee, Byungse So, Jonggyu Park, Kyoungsub Oh, Kwanjong Park, Jongsoo Seo, Taehwa Yoo, Min-ho Kim
  • Patent number: 8508990
    Abstract: A non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit is configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: August 13, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung Lae Cho, Hyuck-Sun Kwon, Jun Jin Kong
  • Patent number: 8412909
    Abstract: A storage apparatus includes a memory unit and a controller to set up a memory space of the memory unit as a user data space and a spare space according to a signal representing at least one of the user data space and spare space. An electronic apparatus controls the storage apparatus, and a method controls at least one of the storage apparatus and the electronic apparatus to control a memory space of the storage apparatus.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: April 2, 2013
    Assignee: SAMSUNG Electronics Co., Ltd.
    Inventors: Wonmoon Cheon, Young-Goo Ko, Wonhee Cho, Yeon Ju Jeong, Donggi Lee, Hyuck-Sun Kwon
  • Publication number: 20120047320
    Abstract: A method and apparatus to interface a semiconductor storage device and a host in order to provide performance throttling of the semiconductor storage device. In the method, the semiconductor storage can receive a setting request command from the host. The semiconductor storage device sets a performance throttling parameter to a particular value in response to the setting request command. The semiconductor storage device can send to the host a setting response signal indicating completion of the setting of the performance throttling parameter.
    Type: Application
    Filed: August 18, 2011
    Publication date: February 23, 2012
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Han Bin Yoo, Dong Gi Lee, Hyuck-Sun Kwon
  • Publication number: 20120047319
    Abstract: A semiconductor storage device (SSD) and a method of throttling performance of the SSD. The method can include gathering at least two workload data items related with a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.
    Type: Application
    Filed: June 22, 2011
    Publication date: February 23, 2012
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Han Bin YOON, Yeong-Jae Woo, Dong Gi Lee, Young Kug Moon, Hyuck-Sun Kwon
  • Publication number: 20120047317
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.
    Type: Application
    Filed: June 22, 2011
    Publication date: February 23, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han Bin YOON, Yeong-Jae Woo, Dong Gi Lee, Young Kug Moon, Hyuck-Sun Kwon
  • Publication number: 20120047318
    Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.
    Type: Application
    Filed: June 22, 2011
    Publication date: February 23, 2012
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Han Bin Yoon, Yeong-Jae Woo, Dong Gi Lee, Kwang Ho Kim, Hyuck-Sun Kwon
  • Publication number: 20110314235
    Abstract: A data storage device that includes a storage media, and a controller to compress raw data to be stored in the storage media, wherein the controller can add header and/or footer information to the compressed data. The controller of the data storage device can further change stored, compressed data by retrieving all or only some of the compressed stored data, uncompressing it, adding or changing the now uncompressed data, and then re-compressing it before adding either or both of header and footer to the compressed data. The storage media can be solid state devices, and can be used with a controller in a computer or a server, that can be part of any one or a multitude of types of networks, including, for example, an internet.
    Type: Application
    Filed: June 20, 2011
    Publication date: December 22, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyuck-Sun KWON, KyoungLae Cho
  • Publication number: 20110249495
    Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels. One of the plurality of states of the second group of states includes at least one of the plurality of states of the first group of states.
    Type: Application
    Filed: March 25, 2011
    Publication date: October 13, 2011
    Inventors: Kyoung Lae Cho, Hyuck-Sun Kwon, Jun Jin Kong
  • Publication number: 20100268872
    Abstract: A data storage system comprising a storage device comprising at least one nonvolatile memory, and a controller connected to the storage device through a channel. The memory controller sends part or all of a command, address and data for a next operation to the nonvolatile memory while the nonvolatile memory device is in a busy state. The memory controller then performs a background operation while the nonvolatile memory device remains in the busy state.
    Type: Application
    Filed: April 19, 2010
    Publication date: October 21, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Jin LEE, Taek-Sung KIM, Kwang Ho KIM, Seong Sik HWANG, Hyuck-Sun KWON
  • Publication number: 20100262765
    Abstract: A storage apparatus includes a memory unit and a controller to set up a memory space of the memory unit as a user data space and a spare space according to a signal representing at least one of the user data space and spare space. An electronic apparatus controls the storage apparatus, and a method controls at least one of the storage apparatus and the electronic apparatus to control a memory space of the storage apparatus.
    Type: Application
    Filed: April 7, 2010
    Publication date: October 14, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Wonmoon CHEON, Young-Goo KO, Wonhee CHO, Yeon Ju JEONG, Donggi LEE, Hyuck-Sun KWON