Abstract: A recording medium, a data recording/reproducing method and a data recording/reproducing apparatus are disclosed. A recording medium comprises a data zone where user data are recorded; an inner zone located at an inner circumference of the data zone; and an outer zone located at an outer circumference of the data zone, wherein the data zone includes at least one spare area, and at least one of the inner zone and the outer zone includes at least one disc management area, the disc management area including: defect management information of the recording medium; general management information including information of the defect management information; and address information of the spare area that can be used as a defective replacement cluster, the general management information including address information per cluster of the disc management area where the defect management information is recorded.

Abstract: A physical structure, apparatus for recording/reproducing on/from a recording medium using the same and method thereof are disclosed, by which the physical structure suitable for such a recording medium as BD and the like may be provided. The present invention includes a plurality of recording layers. Each of the recording layers includes a power test area not provided to a physically same position and a management area not provided to a physically same position, wherein a layer having the power test zone and the management area allocated consecutively includes a test area buffer allocated to the power test zone.

Abstract: A recording medium, and a method and apparatus for recording defect management information on the recording medium are disclosed. The method for recording defect management information of a recording medium includes recording a defect entry on the recording medium, wherein the defect entry includes a first field that can identify a defect entry type, a second field recording position information of a defect area within a user data area, and a third field recording position information of a replacement area within a spare area, and recording position information corresponding to the second field and/or the third field in accordance with the defect entry type decided by the first field, wherein, in case of a defect entry type having no corresponding position information, the corresponding field is set to zero (0).

Abstract: The present invention discloses a method of forming a spin on glass film which can prevent a shift of the threshold voltage of a device by curing the spin on glass film with an electron beam of energy of 6-7 kV.

Abstract: The present invention provides a batch type atomic layer deposition. Particularly, the batch type ALD apparatus and an in-situ cleaning method thereof supplies a cleaning gas to a central region of an upper plate in a radial form, thereby improving an efficiency on the in-situ cleaning of the batch type ALD apparatus.

Abstract: Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the substrate having an objective layer on which a metal silicide film is to be formed; and supplying a first source gas for silicon component of the metal silicide and a second source gas for metal component of the metal silicide into the reacting chamber with maintaining a flow rate of the first source gas and with varying a flow rate of the second source gas, wherein the first and second source gases are discretely supplied into the reacting chamber, a reacting zone of the reacting chamber being maintained at a constant temperature range for a selected time.