Abstract: The present disclosure relates to a system and apparatus for monitoring a partial discharge in a switchboard, including a plurality of partial discharge sensors provided in each of a plurality of switchboards to acquire partial discharge data generated in at least one switchboard, and a noise sensor provided in any one of the plurality of switchboards to acquire noise data to be differentiated from the partial discharge data acquired from the at least one partial discharge sensor, and it can be applied to other exemplary embodiments.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: a chamber; a crucible which is disposed within the chamber and has a melting zone where silicon particles are melted; an inner wall which is disposed within the crucible and has a growth zone where an ingot grows from molten silicon introduced from the melting zone; a feeding part which supplies the silicon particles and sweeping gas to the inside of the chamber; and a suction part which surrounds the feeding part and discharges the sweeping gas supplied through the feeding part to the outside of the chamber.

Abstract: There is disclosed an ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method including growing at least a portion of the first ingot in a state where the height of the molten silicon which the crucible is filled with, is kept at a first level for a first period, and changing the height of the molten silicon into a second level different from the first level from the first level for a second period after the first period.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: a chamber; a crucible which is disposed within the chamber and has a melting zone where silicon particles are melted; an inner wall which is disposed within the crucible and has a growth zone where an ingot grows from molten silicon introduced from the melting zone; a feeding part which supplies the silicon particles and sweeping gas to the inside of the chamber; and a suction part which surrounds the feeding part and discharges the sweeping gas supplied through the feeding part to the outside of the chamber.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.

Abstract: There is disclosed an apparatus for manufacturing an ingot, which supplies silicon intermittently or continuously while the ingot is growing, the apparatus including a crucible having a melting zone in which silicon melted, an inner wall having a growth zone in which the ingot grows from the molten silicon supplied from the crucible, a sweeping gas supply unit configured to supply sweeping gas to the growth zone, and a passage unit configured to provide a passage of the sweeping gas transferred outside the crucible, the passage unit comprising an upper heat shield configured to cover an upper portion of the melting zone and a sweeping wall extended from the upper heat shield toward the melting zone in a downward direction.

Abstract: Disclosed are an apparatus for manufacturing an ingot and a method of manufacturing the ingot to control a concentration of dopant. The apparatus for manufacturing an ingot to intermittently or continuously feed silicon while an ingot is grown, includes: a crucible having a melting zone in which the silicon and dopant are melted; an inner wall surrounded by the crucible, and having a growth zone in which the melted silicon and the dopant are introduced so that the ingot is grown in the inner zone; and a feeding unit feeding the silicon into the melting zone, wherein a ratio of a feed rate of the silicon fed through the feeding unit to a growth rate of the ingot is changed.