Abstract: There are provided a control unit and a substrate treating apparatus including the same, which manage the quality and lifespan of an inkjet head unit based on the position reproducibility of a substrate treating solution ejected by the inkjet head unit. The substrate treating apparatus includes: a process treatment unit supporting a substrate; an inkjet head unit ejecting a substrate treating solution onto the substrate in the form of a droplet; a gantry unit moving the inkjet head unit; and a control unit controlling the inkjet head unit, wherein the control unit determines whether to replace the inkjet head unit based on a position reproducibility of the droplet.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: a chamber; a crucible which is disposed within the chamber and has a melting zone where silicon particles are melted; an inner wall which is disposed within the crucible and has a growth zone where an ingot grows from molten silicon introduced from the melting zone; a feeding part which supplies the silicon particles and sweeping gas to the inside of the chamber; and a suction part which surrounds the feeding part and discharges the sweeping gas supplied through the feeding part to the outside of the chamber.

Abstract: There is disclosed an apparatus for manufacturing an ingot, which supplies silicon intermittently or continuously while the ingot is growing, the apparatus including a crucible having a melting zone in which silicon melted, an inner wall having a growth zone in which the ingot grows from the molten silicon supplied from the crucible, a sweeping gas supply unit configured to supply sweeping gas to the growth zone, and a passage unit configured to provide a passage of the sweeping gas transferred outside the crucible, the passage unit comprising an upper heat shield configured to cover an upper portion of the melting zone and a sweeping wall extended from the upper heat shield toward the melting zone in a downward direction.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: a chamber; a crucible which is disposed within the chamber and has a melting zone where silicon particles are melted; an inner wall which is disposed within the crucible and has a growth zone where an ingot grows from molten silicon introduced from the melting zone; a feeding part which supplies the silicon particles and sweeping gas to the inside of the chamber; and a suction part which surrounds the feeding part and discharges the sweeping gas supplied through the feeding part to the outside of the chamber.

Abstract: Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.

Abstract: There is disclosed an ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method including growing at least a portion of the first ingot in a state where the height of the molten silicon which the crucible is filled with, is kept at a first level for a first period, and changing the height of the molten silicon into a second level different from the first level from the first level for a second period after the first period.

Abstract: Disclosed are an apparatus for manufacturing an ingot and a method of manufacturing the ingot to control a concentration of dopant. The apparatus for manufacturing an ingot to intermittently or continuously feed silicon while an ingot is grown, includes: a crucible having a melting zone in which the silicon and dopant are melted; an inner wall surrounded by the crucible, and having a growth zone in which the melted silicon and the dopant are introduced so that the ingot is grown in the inner zone; and a feeding unit feeding the silicon into the melting zone, wherein a ratio of a feed rate of the silicon fed through the feeding unit to a growth rate of the ingot is changed.