Abstract: A junction structure element, a method of manufacturing the same, and an in-memory computing device including the same are disclosed. The junction structure element may include: a first polarization layer containing a material having a ferroelectric characteristic of being polarized only horizontally; a second polarization layer disposed on the first polarization layer and containing a material having a ferroelectric characteristic of being polarized only vertically; a source electrode and a drain electrode each in contact with the first polarization layer and spaced apart from each other; and a gate electrode disposed on the second polarization layer.

Abstract: Disclosed are an oxidizing electrode, a water electrolysis device including the same and a method for manufacturing the same. According to exemplary embodiments of the present disclosure, there is provided an oxidizing electrode with improved performance at low loadings of noble metals, especially, ruthenium (Ru) and iridium oxide, in which a ruthenium (Ru) layer and an iridium oxide layer formed on a substrate by electrodeposition in a sequential order are supported by electrochemical reaction rather than physical bonding.

Abstract: Provided is an indeterminate copper material for electrolytic copper foil and a preparation method thereof. Specifically, the present disclosure relates to an indeterminate copper material for electrolytic copper foil, which exhibits excellent dissolution performance when dissolved in an electrolyte to manufacture electrolytic copper foil, contributes to securing work stability during the manufacture of electrolytic copper foil, and is simple to prepare, thereby reducing manufacturing costs, and a preparation method thereof.

Abstract: Provided are a junction structure element and a method of manufacturing the junction structure element. The junction structure element includes a semiconductor channel layer which includes a material having ferroelectric and semiconductor properties, a source electrode and a drain electrode which are each in contact with the semiconductor channel layer and are spaced apart from each other, a ferroelectric layer which is formed on the semiconductor channel layer and includes a material having ferroelectric properties, and a gate electrode to be disposed on the ferroelectric layer. The method of manufacturing the junction structure element includes a first operation of forming a semiconductor channel layer, which includes a material having ferroelectric and semiconductor properties, on a substrate, and a second operation of forming a ferroelectric layer, which includes a material having ferroelectric properties, on the semiconductor channel layer.

Abstract: Disclosed are a negative transconductance device and a multi-valued memory device using the same. The negative transconductance includes a monolithic WSe2 semiconductor thin film; a first doped layer disposed on a first area of the WSe2 semiconductor thin film; a second doped layer disposed on a second area of the WSe2 semiconductor thin film so as to supply holes to the second area, wherein the second area is spaced apart from the first area; a first electrode electrically connected to the first area of the WSe2 semiconductor thin film; a second electrode electrically connected to the second area of the WSe2 semiconductor thin film; and a third electrode for applying a gate voltage to the first area and the second area of the WSe2 semiconductor thin film, and to a third area thereof located between the first and second areas.

Abstract: A method for diagnosing a state of a submodule in initial charging of an MMC converter includes identifying, by an upper level controller, a stopped state of the MMC converter; supplying, by the upper level controller, an alternating current (AC) voltage from an AC side to N submodules in the MMC converter when the MMC converter is in the stopped state; charging a capacitor in the submodule with the supplied AC voltage to store an initial charging voltage in the capacitor; determining, by a submodule controller, whether the submodule is in a fault state and when the submodule is in a fault state, transmitting a fault signal to the upper level controller; and detecting, by a voltage detection unit of the submodule the initial charging voltage stored in the capacitor and transmitting the initial charging voltage to the submodule controller.

Abstract: A method for diagnosing a state of a submodule in initial charging of an MMC converter includes identifying, by an upper level controller, a stopped state of the MMC converter; supplying, by the upper level controller, an alternating current (AC) voltage from an AC side to N submodules in the MMC converter when the MMC converter is in the stopped state; charging a capacitor in the submodule with the supplied AC voltage to store an initial charging voltage in the capacitor; determining, by a submodule controller, whether the submodule is in a fault state and when the submodule is in a fault state, transmitting a fault signal to the upper level controller; and detecting, by a voltage detection unit of the submodule the initial charging voltage stored in the capacitor and transmitting the initial charging voltage to the submodule controller.

Abstract: An MMC converter linked to a HVDC system and a sub-module are proposed. The sub-module includes: first and second power semiconductor switches serially connected in the same direction, each including a semiconductor switch and a diode connected in anti-parallel to the semiconductor switch; a capacitor parallelly connected to the first and second power semiconductor switches serially connected; a first terminal connected to a first node between the first and second power semiconductor switches; a second terminal connected to a second node between the second power semiconductor switch and the capacitor; a third power semiconductor switch of which a side is connected to the second node, the third power semiconductor switch including a semiconductor switch and a diode connected in anti-parallel to the semiconductor switch; and a third terminal connected to a terminal of an AC grid system and connected to the other side of the third power semiconductor switch.

Abstract: Provided is a hybrid control device for a static synchronous compensator (STATCOM), the device including: a first arithmetic operation unit calculating the deviation between a reference voltage desired to be controlled by the STATCOM and output voltage to be output so as to output the same; a proportional integral (PI) controller performing PI control on the deviation output from the first arithmetic operation unit within a range between a new inductive reactive current maximum value and a new capacitive reactive current maximum value, so as to output a reactive current output value; and a second arithmetic operation unit adding the preset reactive current set value to the reactive current output value output from the PI control unit so as to output a reactive current reference value.

Abstract: Provided is a hybrid control device for a static synchronous compensator (STATCOM), the device including: a first arithmetic operation unit calculating the deviation between a reference voltage desired to be controlled by the STATCOM and output voltage to be output so as to output the same; a proportional integral (PI) controller performing PI control on the deviation output from the first arithmetic operation unit within a range between a new inductive reactive current maximum value and a new capacitive reactive current maximum value, so as to output a reactive current output value; and a second arithmetic operation unit adding the preset reactive current set value to the reactive current output value output from the PI control unit so as to output a reactive current reference value.

Abstract: An MMC converter linked to a HVDC system and a sub-module are proposed. The sub-module includes: first and second power semiconductor switches serially connected in the same direction, each including a semiconductor switch and a diode connected in anti-parallel to the semiconductor switch; a capacitor parallelly connected to the first and second power semiconductor switches serially connected; a first terminal connected to a first node between the first and second power semiconductor switches; a second terminal connected to a second node between the second power semiconductor switch and the capacitor; a third power semiconductor switch of which a side is connected to the second node, the third power semiconductor switch including a semiconductor switch and a diode connected in anti-parallel to the semiconductor switch; and a third terminal connected to a terminal of an AC grid system and connected to the other side of the third power semiconductor switch.

Abstract: A shorting device for facilitating the grounding of a converter to which a plurality of sub modules is connected in series. The device includes: a moving rod (40) provided on a main frame (10) on which sub modules (S) are provided, and moving in the direction traversing the sub modules (S); and contactors (50) provided at the moving rod (40) to be electrically connected to each sub module outer casing (1) according to the movement of the moving rod (40). In addition, a connection means (C) electrically connects the contactor (50), the sub module outer casing (1), and another adjacent sub module outer casing (1) to enable simultaneous grounding thereof. This invention connects the sub module outer casings (1), which form the converter, through the operation of the shorting device to ground the sub modules (S).