Abstract: The present invention relates to a composition for preventing or treating a respiratory disease containing an active ingredient in the form of a mixed herbal extract of Cnidii Rhizoma and Polygoni cuspidati Radix, and relates to a production method therefor. The mixed herbal extract of Cnidii Rhizoma and Polygoni cuspidati Radix has an outstanding 5-lipoxygenase suppressing activity, airway constriction suppressing activity, airway inflammation suppressing action, ear-swelling anti-inflammatory effect and antitussive and phlegm-loosening action, and has been confirmed to be useful in preventing or treating respiratory diseases including asthma, chronic obstructive pulmonary disease, acute and chronic bronchitis, allergic rhinitis, cough, expectoration, acute lower respiratory infections (bronchitis and bronchiolitis), and acute upper respiratory infections such an pharyngitis, tonsillitis and laryngitis.

Abstract: Provided are a conductive layered structure including a DNA hydrogel and a composite layer disposed on the DNA hydrogel. The composite layer may include a polymer electrolyte and a conductive material. Also provided are an electrode and a supercapacitor, each including the conductive layered structure. Further provided is a method of manufacturing the conductive layered structure. Thus, a biocompatible, implantable electrode having a large specific surface area and a high conductivity may be manufactured through simple processes.

Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.

Abstract: An inverted organic solar cell including a fiber type substrate, a cathode layer formed on the fiber type substrate, an electron transport layer comprising nanorods formed on the cathode layer, a photoactive layer formed on the electron transport layer, a hole transport layer formed on the photoactive layer, and an anode layer formed on the hole transport layer.

Abstract: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.

Abstract: Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.

Abstract: A nanofiber composite including a nanofiber formed of a hydrophobic polymer, a nanowire formed of a conductive or semiconductive organic material that is oriented in the nanofiber in the longitudinal direction of the nanofiber, and an ionic active material.

Abstract: An electroconductive fiber, a method of manufacturing an electroconductive fiber, and a fiber complex including an electroconductive fiber are provided, the electroconductive fiber includes an electroconductive polymer, an elastic polymer that forms a structure with the electroconductive polymer, and a carboneous material on at least one of the electroconductive polymer and the elastic polymer.

Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.

Abstract: Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer.

Abstract: Provided is a large-capacity metal catalyst support and a catalytic converter using the same, in which a number of unit catalyst support blocks are changed in a form of being effectively assembled so as to be applied to a catalytic converter that is required for processing a large amount of exhaust gas such as large vessels or plants employing a number of large-scale internal combustion engines, or large food processing devices, to thus easily assemble the unit catalyst support blocks into a large-scale assembled structure. The catalyst support includes: a number of unit catalyst support blocks in which cell formation bodies formed of a number of hollow cells that are aligned in a longitudinal direction are accommodated and stacked in a polygonal supporter wherein a catalyst is coated on the surfaces of the hollow cells; and a number of assembly members each for fixing a pair of adjacent supports that mutually contact between the stacked unit catalyst support blocks.

Abstract: An exemplary embodiment of the present invention relates to a display panel having a plurality of pixels, the display panel including a first substrate, and a color filter including a plurality of first color filters disposed on the first substrate and a second color filter having a black color and disposed in the same layer as the first color filters.

Abstract: Kits for detecting a target material and methods of detecting a target material by using the kits are provided, the kits include a target material binding portion including a first molecule and a probe linked to the first molecule, and a target material detection portion including a plurality of nanoparticles each having a surface to which a compound having a zwitterion and a second molecule are linked. The first molecule is specifically bound to the second molecule in a pair.

Abstract: A method of forming a stretchable conductive pattern includes forming a base substrate; forming a plurality of non-linear trench lines that include peaks and valleys arranged at constant intervals in the base substrate; forming a polymer-metal precursor mixture pattern by filling the trench lines with a mixture of the polymer-metal precursor; converting the polymer-metal precursor mixture of the polymer-metal precursor mixture pattern into a polymer gel/metal nano-particle complex to form a polymer gel/metal nano-particle complex pattern; and primarily transferring the polymer gel/metal nano-particle complex pattern in the base substrate onto an acceptor base substrate.

Abstract: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

Abstract: Example embodiments relate to stretchable conductive nanofibers including at least one stretchable nanofiber and a conductive layer on a structure of the stretchable nanofiber. The conductive layer may include carbon nanotubes and metal nanoparticles on the surface of the stretchable nanofiber. The carbon nanotubes and metal nanoparticles may form a percolation network. The stretchable nanofiber includes stretchable polymers.

Abstract: A positive electrode includes a current collector and a positive electrode active material layer. The positive electrode active material layer includes a positive electrode active material including a core including a compound LiaCO1-bMbO2 and a surface-treatment layer. In the core compound, 0.95?a?1.1, 0.002?b?0.02, and M is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Sc, Y, Ti, Zr, Hf, Rf, V, Nb, Ta, Db, Cr, Mo, W, Sg, Tc, Re, Bh, Fe, Ru, Os, Hs, Rh, Ir, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, Si, Ge, Sn, P, As, Sb, Bi, S, Se, Te, Po. The surface-treatment layer includes a compound including element of P, and one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Sc, Y, Ti, Zr, Hf, Rf, V, Nb, Ta, Db, Cr, Mo, W, Sg, Tc, Re, Bh, Fe, Ru, Os, Hs, Rh, Ir, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Te, Po.

Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.

Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.