Abstract: Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.

Abstract: A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is a SiO2 film, the photocatalyst layer comprises an amorphous TiO2 film, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiO2 film. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a silicate precursor to obtain a SiO2 sol by dehydration and de-alcoholization reaction; applying and drying the SiO2 sol on a substrate to form a barrier layer; adding an alcohol solvent and an acid to a titanium precursor to obtain a TiO2 amorphous sol by dehydration and de-alcoholization reaction; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiO2 amorphous sol on the barrier layer, to form a photocatalyst layer.

Abstract: There are provided a core material for vacuum insulator comprising an organic synthetic fiber, and at least one organic synthetic fiber bonded portion; and a preparation method therefor. In addition, provided is a vacuum insulator comprising the core material for vacuum insulator comprising the organic synthetic fiber, and the at least one organic synthetic fiber bonded portion.

Abstract: Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; and an oxide thin film formed on the gate insulating layer, wherein the oxide thin film include a channel region, source region and drain regions disposed on the channel region and spaced apart from each other, and a concentration profile due to a dopant diffused from the gate insulating layer, wherein the channel region operates as a channel layer by the concentration profile.

Abstract: A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is an amorphous TiO2 film, the photocatalyst layer comprises an amorphous TiO2 film, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiO2 film. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a titanium precursor to obtain a TiO2 amorphous sol by dehydration and de-alcoholization reaction; applying and drying the TiO2 amorphous sol on a substrate to form a barrier layer; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiO2 amorphous sol on the barrier layer, to form a photocatalyst layer.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

Abstract: Provided are a method of forming an oxide thin film using hydrogen peroxide, and a method of fabricating an oxide thin film transistor using hydrogen peroxide. Embodiments of the present disclosure provide methods of forming an oxide film, including: mixing hydrogen peroxide with a precursor solution in which a precursor material is dissolved in a solvent; applying the precursor solution mixed with the hydrogen peroxide to a substrate; heat treating the substrate.

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract: Provided are an oxide thin film, a method for post-treating an oxide thin film and an electronic apparatus. An oxide thin film is an oxide thin film with a single layer including a metal oxide, and the physical properties of the oxide thin film may change in the thickness direction thereof.

Abstract: Disclosed is a method for repairing an oxide thin film, including repairing the oxide thin film by forming a repairing material that contains an oxide at a defect of the oxide thin film.

Abstract: Provided herein is a communication method using MIMO (Multiple-Input Multiple-Output) technology for communicating with a terminal included in each of a plurality of base station cells using a communication apparatus, the method including calculating, by the communication apparatus, the number of terminals included inside a base station cell; generating, by the communication apparatus, pilot signals corresponding to the calculated number of terminals; and allocating, by the communication apparatus, the pilot signals to a terminal that may maximize a network capacity based on the generated pilot signals.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: A beamforming apparatus and method for expanding coverage of a control channel are provided, by which neighboring communication devices are classified according to the number of beams that they can receive, and therefore the frequency or period of beam transmission is adjusted to transmit a control channel by a beamforming method. Hence, an overhead reduction and an increase in transmission rate can be achieved, and coverage holes can be prevented.

Abstract: Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.

Abstract: Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.

Abstract: Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.

Abstract: An electronic device and a method for operating the electronic device are provided. The electronic device includes a secure memory including at least one profile, a processor configured to generate profile extended information for each of the at least one profile, based on profile information, update the profile extended information based on network information obtained by a network search, a memory configured to store the profile extended information, and a communication interface configured to perform the network search.

Abstract: A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.