Abstract: An operation method of a storage device including first and second physical functions respectively corresponding to first and second hosts includes receiving performance information from each of the first and second hosts, setting a first weight value corresponding to the first physical function and a second weight value corresponding to the second physical function, based on the received performance information, selecting one of a first submission queue, a second submission queue, a third submission queue, and a fourth submission queue based on an aggregated value table, the first and second submission queues being managed by the first host and the third and fourth submission queues are managed by the second host, processing a command from the selected submission queue, and updating the aggregated value table based on a weight value corresponding to the processed command from among the first and second weights and input/output (I/O) information of the processed command.

Abstract: The present disclosure relates to methods and compositions of linepipe steels that transport one or both of crude oil and natural gas. More particularly, the present disclosure relates sulfide stress cracking resistance of carbon steels for use as linepipe in transporting crude oil and natural gas by alternative carbon steel compositions comprising relatively low-manganese contents and/or low-carbon contents, alone or in combination with hydrogen trapping precipitates.

Abstract: An electronic apparatus includes: a circuit board; a driving chip mounted on the circuit board; a shield-can including a top surface and a side surface extending in a direction from the top surface to the circuit board, wherein the top surface covers the driving chip; and a first film disposed on the shield-can and including a first opening that exposes a part of the top surface of the shield-can.

Abstract: A multilayer electronic component includes a body including a plurality of dielectric layers and an internal electrode including a conductive material, and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes a Sn diffusion portion including Sn in a region connected to the external electrode, and a ratio of an average number of atoms of the Sn compared to an average number of atoms of the conductive material other than the Sn of the internal electrode included in the Sn diffusion portion is 3% or more and 50% or less.

Abstract: The present invention relates to a composition for gene manipulation for treating or improving a retinal dysfunction disease or a method using the same. More particularly, the present invention relates to a composition for gene manipulation including a guide nucleic acid capable of targeting a retinal function-forming gene and a method of treating or improving a disease caused by retinal dysfunction by artificially manipulating and/or correcting a retinal function-forming gene using the same.

Abstract: The present disclosure relates to methods and treatments of linepipe steels that transport one or both of crude oil and natural gas. More particularly, the present disclosure relates to sulfide stress cracking resistance of carbon steels for use as linepipe in transporting crude oil and natural gas by alternative thermo-mechanically controlled and/or one or more additional heat treatment processes.

Abstract: A multilayer electronic component includes a body including a dielectric layer and first and second internal electrodes alternately disposed with the dielectric layer interposed therebetween, and having first and second surfaces opposing in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing in a third direction, first and second external electrodes including first and second plating layers disposed on the third and fourth surfaces, respectively and first and second electrode layers disposed on the first and second plating layers, respectively, first and second band electrodes disposed on the first surface and connected to the first and second external electrode, respectively. The first and second electrode layers do not contain glass.

Abstract: The present invention relates to ferrous alloys with high strength, cost-effective corrosion resistance and cracking resistance for refinery service environments, such as amine service under sweet or sour environments. More specifically, the present invention pertains to a type of ferrous manganese alloyed steels for high strength and cracking resistance and methods of making and using the same.

Abstract: Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.

Abstract: A battery module effectively prevents the occurrence or spread of fire. The battery module includes a cell assembly including a plurality of secondary batteries stacked on each other; and a module case including a lower plate, a side plate and an upper plate to form an inner space so that the cell assembly is accommodated therein, the module case including a trap unit formed in at least a part of an inner surface of the side plate to be concave outward, the trap unit being formed to be biased in a front or rear direction.

Abstract: A battery module includes a cell assembly including a plurality of secondary batteries stacked on each other; and a module case including a lower plate, a side plate and an upper plate to form an inner space so that the cell assembly is accommodated therein, the module case including a trap unit formed in at least a part of an inner surface of the side plate to be concave outward.

Abstract: Provided is a microorganism having the capability of producing 3-hydroxypropionic acid from glucose and a method for producing 3-hydroxypropionic acid from glucose by using the microorganism. The microorganism can include a mutation adapted to utilize intracellularly introduced glucose in 3HP production rather than cell growth, and thus increases in 3HP productivity (3HP production capacity) can be achieved. Also provided is a method that can increase 3HP production yield by controlling the time of adding an inducer and/or kinds of an alkaline aqueous solution during culturing.

Abstract: The present disclosure relates to providing an online shooting game by a game server communicatively connected to a player terminal. The player terminal may display a virtual online shooting game environment based on information received from the game server. Providing an online shooting game may include: selecting a basic identification range within a virtual online shooting game environment displayed on the player terminal; detecting one or more enemy characters that are within the basic identification range; determining one of the detected one or more enemy characters as an automatic tracking object; and allowing an aiming point to automatically track movement of the automatic tracking object within the basic identification range.

Abstract: A multilayer marking film is disclosed herein. In some embodiments, a multilayer marking film includes, in sequential order, an adhesive layer, a colored base layer having a first color, and a colored coating layer having a second color, wherein information can be written by laser irradiation on the colored coating layer.

Abstract: A self-aligned memory device includes a conductive bottom plug disposed within an insulating layer and having a coplanar top surface, a self-aligned planar bottom electrode disposed upon the coplanar top surface and having a thickness within a range of 50 Angstroms to 200 Angstroms, a planar switching material layer disposed upon the self-aligned planar bottom electrode, a planar active metal material layer disposed upon the planar switching material layer and a planar top electrode disposed above the planar active metal material layer, wherein the self-aligned planar bottom electrode, the planar switching material layer, the planar active metal material layer, and the planar top electrode form a pillar-like structure above the insulating layer.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: Techniques for using native and/or previously programmed resistive switching devices as one time programmable memory are discussed. On example method comprises allocating a set of resistive switching devices to be one time programmable memory; determining data to be stored in the set of resistive switching devices; for each resistive switching device of the set of resistive switching devices, assigning one of a first digital value or a second digital value to that resistive switching device, based on the data; and for each resistive switching device assigned the first digital value, permanently programming that resistive switching device via reverse formation.

Abstract: A storage device includes a first physical space including first nonvolatile memory devices, a second physical space including second nonvolatile memory devices physically isolated from the first nonvolatile memory devices, and a storage controller that fetches a command from an external device and performs an operation corresponding to the command in any one of the first and second physical spaces, based on information included in the fetched command.

Abstract: Disclosed is a solid state memory having a non-linear current-voltage (I-V) response. By way of example, the solid state memory can be used as a selector device. The selector device can be formed in series with a nonvolatile memory device via a monolithic fabrication process. Further, the selector device can provide a substantially non-linear I-V response suitable to mitigate leakage current for the nonvolatile memory device. In various disclosed embodiments, the series combination of the selector device and the non-volatile memory device can serve as one of a set of memory cells in a 1-transistor, many-resistor resistive memory cell array.

Abstract: Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification or random number generation. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.