Abstract: The present invention relates to uncooled infrared detector with infrared absorption structure in which the supporting layer, detection layer, protecting layer, and dielectric layer construct ?/4 resonating absorbtion structure as a single body. In order to enhance the characteristic of uncooled infrared detector, it is essential for the infrared absorption layer to absorb incident infrared with high efficiency. The present invention is characterized in that the infrared detector with unified absorption layer includes an infrared detection film, a device protecting layer, a supporting layer for thermally isolated structure, and a dielectric layer, etc. in its absorption structure. Due to this characteristic, highly efficient infrared absorption is possible with much less thermal mass than the absorption layer for the structure of existing metal/dielectric/metal structure and regardless of the distortion of floating structure caused by fabrication fault rather than air cavity ?/4 structure.

Abstract: A power controlling device in a mobile communication system, and a method thereof. A base station calculates an average interference of N previous frames, and broadcasts the average interference to subscriber stations. The subscriber stations determine transmission power based on the average interference. Noise and Interference (NI) of frames within a section corresponding to a setting size is calculated (the frames may include a current frame) so an estimated interference is close to the interference generated in the frame in which the subscriber station actually transmits a signal. In addition, to more precisely estimate the NI, the NI of the current frame is compensated according to a value and is broadcast.

Abstract: The present invention relates to an oxide thin film for a bolometer-type uncooled infrared detector having high sensitivity. An amorphous vanadium tungsten oxide (V—W—Ox), i.e. a tungsten-doped vanadium oxide, is provided as an oxide film for a bolometer application. An oxide for bolometer having characteristics of low resistance of 5 to 200 k ? and variable TCR between ?1.5 and ?4.1%/° C. can be obtained by an oxidation of vanadium-tungsten metal film at a low temperature around 300° C., with changing a tungsten content and oxidation time. And a reproducible thin film can be fabricated by low price equipment for thin film deposition, without expensive ion beam or laser apparatus. Accordingly, an oxide for bolometer having characteristics of resistance lower than 100 k? and TCR higher than ?3%/° C. can be obtained with reproducibility, whereby an uncooled-type infrared detector having high sensitivity can be fabricated.

Abstract: The present invention relates to uncooled infrared detector with infrared absorption structure in which the supporting layer, detection layer, protecting layer, and dielectric layer construct ?/4 resonating absorbtion structure as a single body. In order to enhance the characteristic of uncooled infrared detector, it is essential for the infrared absorption layer to absorb incident infrared with high efficiency. The present invention is characterized in that the infrared detector with unified absorption layer includes an infrared detection film, a device protecting layer, a supporting layer for thermally isolated structure, and a dielectric layer, etc. in its absorption structure. Due to this characteristic, highly efficient infrared absorption is possible with much less thermal mass than the absorption layer for the structure of existing metal/dielectric/metal structure and regardless of the distortion of floating structure caused by fabrication fault rather than air cavity ?/4 structure.

Abstract: The present invention relates to an oxide thin film for a bolometer-type uncooled infrared detector having high sensitivity. A vanadium tungsten oxide (V—W—Ox), i.e. a tungsten-doped vanadium oxide, is provided as an oxide film for a bolometer. An oxide for bolometer having characteristics of low resistance of 5 to 200 k? and variable TCR between ?1.5 and ?4.1%/° C. can be obtained by an oxidation of vanadium-tungsten metal film at a low temperature around 300° C., with changing a tungsten content and oxidation time. And a reproducible thin film can be fabricated by low price equipment for thin film deposition, without expensive ion beam or laser apparatus. Accordingly, an oxide for bolometer having characteristics of resistance lower than 100 k? and TCR higher than ?3%/° C. can be obtained with reproducibility, whereby an uncooled-type infrared detector having high sensitivity can be fabricated.