Abstract: A cathode for a lithium secondary battery includes a cathode current collector, a first cathode active material layer on the cathode current collector and a second cathode active material layer on the first cathode active material layer. The first cathode active material layer includes first cathode active material particles and a first binder. The first cathode active material particles include large-scaled particles having an average diameter (D50) from 10 ?m to 20 ?m and small-scaled particles having an average (D50) diameter from 1 ?m to 9 ?m. The second cathode active material layer includes second cathode active material particles having an average diameter (D50) from 1 ?m to 20 ?m and a second binder.

Abstract: The actuator device according to the present embodiment comprises: a holder; a reflective member disposed on the holder; a rigid mover coupled to the holder; a first magnet disposed on the rigid mover; a second magnet generating a repulsive force with the first magnet; and a first driving magnet for tilting the holder, wherein the first driving magnet comprises a first surface in a direction directing toward the reflective member, wherein the second magnet comprises a first surface in a direction directing toward the reflective member, wherein the first surface of the first driving magnet comprises a first region that is the most adjacent to the second magnet, and wherein a first region of the first driving magnet having a polarity different from that of the first surface of the second magnet.

Abstract: Cathodes and lithium secondary batteries including the cathodes are disclosed. In some implementations, a cathode may include a cathode current collector and a cathode active material layer disposed on the cathode current collector and including cathode active material particles such that the cathode active material layer satisfies a specific equation. The cathode active material particles may include lithium metal oxide particles that include nickel, and may have a mole fraction of cobalt of 0.02 or less with respect to all elements except for lithium and oxygen.

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes a cathode active material and a conductive material ID/IG is in a range from 0.5 to 1.25 in a Raman spectrum of the cathode active material layer. The cathode active material includes lithium metal oxide particles containing nickel and manganese and having a content of cobalt of less than 2 mol % among all elements except for lithium and oxygen.

Abstract: An automated gas supply system includes a gas cylinder transfer unit configured to transfer a cradle in which one or more gas cylinders storing a gas therein are stored; a gas cylinder inspection unit configured to check properties of the gas stored in the gas cylinder transferred from the gas cylinder transfer unit and check whether the gas leaks from the gas cylinder; a storage queue configured to receive the gas cylinder from the gas cylinder inspection unit by a mobile robot and configured to classify and store the transferred gas cylinders according to the properties of the gas stored in the gas cylinder; and a gas cabinet configured to receive the gas cylinder from the storage queue by the mobile robot and fasten a gas pipe, which is connected to a semiconductor manufacturing process line, to a gas spray nozzle, which is disposed at one side of the received gas cylinder, to supply the gas stored in the gas cylinder to the semiconductor manufacturing process line, wherein the gas cabinet includes a resid

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes cathode active material particles. The cathode active material particles include a lithium metal oxide particle containing nickel and having a mole fraction of cobalt of 0.02 or less among all elements except lithium and oxygen.

Abstract: Provided is a process proximity effect correction method capable of efficiently improving the dispersion of patterns. There is a process proximity effect correction method according to some embodiments, the process proximity effect correction method of a process proximity effect correction device for performing process proximity effect correction (PPC) of a plurality of patterns using a machine learning module executed by a processor, comprising: training a sensitivity model by inputting a layout image of the plurality of patterns and a layout critical dimension (CD) of the plurality of patterns into the machine learning module; estimating an after cleaning inspection critical dimension (ACI-CD) sensitivity prediction value of the plurality of patterns by inferring an ACI-CD prediction value of the plurality of patterns; and determining a correction rate of the layout CD of the plurality of patterns using the estimated sensitivity prediction value.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device that improves the on-resistance (Ron) of the RF switch by including an integral or integrally formed P diode. The RF switch device includes a first active region on a first substrate as a first base, a second active region on the first substrate spaced apart from the first active region as a second base, and a gate electrode on the first active region and on the second active region.

Abstract: An embodiment of the present invention provides a camera actuator comprising: a housing; a mover disposed inside the housing and including an optical member; a tilting guide part for guiding tilting of the mover; and a driving part disposed inside the housing and driving the motor, wherein, the driving part comprises at least one magnet and at least one coil, and the at least one magnet at least partially overlaps the tilting guide part in a first direction perpendicular to an optical axis or in a second direction perpendicular to the optical axis.

Abstract: A method of manufacturing a plastic lens includes first heating of a lens preform, disposing the lens preform in a molding apparatus, second heating of the lens preform, pressing the lens preform with the molding apparatus, and cooling the molding apparatus.

Abstract: An embodiment of the present invention provides a camera actuator comprising: a housing; a first member combined with the housing; a mover including an optical member; a first magnetic body disposed in the first member; a second magnetic body disposed in the mover; and a tilting-guiding part for guiding titling of the mover, wherein the mover comprises a holder combined with the optical member and a second member combined with the holder, and the tilting-guiding part is closely adhered to the first member and the holder by repulsion between the first magnetic body and the second magnetic body.

Abstract: An embodiment of the present invention discloses a camera actuator including a housing, a mover on which a reflective member is disposed, a guide part disposed between the housing and the mover, and a driving part which drives the mover, wherein the guide part includes a support part, a first elastic part coupled to the support part and the mover, and a second elastic part coupled to the support part and the housing, the first elastic part tilts the mover with respect to a first axis, and the second elastic part tilts the mover with respect to a second axis perpendicular to the first axis.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: An RF switch device and a method of manufacturing the same are disclosed. More particularly, an RF switch device in a stacked configuration and a method of manufacturing the same seeking to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: An embodiment of the present invention relates to a lens driving device comprising: a housing; a bobbin disposed in the housing; a coil disposed on the bobbin; and a first magnet disposed opposite to the coil in the housing, wherein: the first magnet comprises an inner surface facing the coil, and an outer surface disposed at the opposite side to the inner surface; and the first magnet comprises a first region provided between the inner surface and the outer surface and having a first thickness, and a second region extending from the first region and having a second thickness which is smaller than the first thickness.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.