Abstract: The present invention relates to a water purifier comprising a body having an external appearance of a shape able to hold water, and a discharge device which is located inside the body and discharges the water held in the body to the outside of the body; wherein the discharge device comprises a discharge unit body which has a hollow shape that provides a flow pathway for discharging the water held in the body, and a light-source unit which is disposed facing the discharge unit body and irradiates light having the wavelength band of ultraviolet light towards water flowing through the discharge unit body.

Abstract: The present invention relates to a water purifier comprising a body having an external appearance of a shape able to hold water, and a discharge device which is located inside the body and discharges the water held in the body to the outside of the body; wherein the discharge device comprises a discharge unit body which has a hollow shape that provides a flow pathway for discharging the water held in the body, and a light-source unit which is disposed facing the discharge unit body and irradiates light having the wavelength band of ultraviolet light towards water flowing through the discharge unit body.

Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

Abstract: A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.

Abstract: A light emitting device can include a supporting layer; a semiconductor structure including: an active layer between first-type and second-type semiconductor layers, a first top surface and a first bottom surface, and a side surface between the first top and bottom surfaces, which is inclined; a first electrode between the supporting and semiconductor layers; a connection metal layer having a first portion between the first electrode and the supporting layer, which includes a stepped portion having a upper portion contacting the first electrode, and a second portion of the connection metal layer extends beyond the semiconductor structure; and a passivation layer extending from the second portion of the connection metal layer to the side surface of the semiconductor structure, which includes a second bottom surface contacting the second portion of the connection metal layer; and a second top surface opposite to the second bottom surface.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second conductive type semiconductor layer on the reflective layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a pad electrode on the first conductive type semiconductor layer. The reflective layer comprises a predetermined pattern.

Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

Abstract: A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulation layer disposed between the first conductive layer and the second conductive layer. The first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer. The insulation layer is disposed on the lateral surface of the first expansion part, and wherein the lateral surface of the second expansion part contacts with the first semiconductor layer.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulation layer disposed between the first conductive layer and the second conductive layer. The first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer. The insulation layer is disposed on the lateral surface of the first expansion part, and the lateral surface of the second expansion part contacts with the first semiconductor layer.

Abstract: A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via.

Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: Provided are a light emitting device package, a method of manufacturing the light emitting device package, and a lighting system. The light emitting device package includes a package body, an electrode layer, a reflective layer, a nanopattern metal layer, a light emitting device, and a molding part. The electrode layer is disposed on the package body. The reflective layer is disposed over the electrode layer. The nanopattern metal layer is disposed over the reflective layer. The light emitting device is displayed over the electrode layer. The molding part is disposed over the light emitting device.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via.