Abstract: A remote-plasma ALD apparatus includes a reaction chamber, an exhaust line for exhausting gas from the reaction chamber, a first reactive gas supply unit for selectively supplying a first reactive gas to the reactant chamber or the exhaust line, a first reactive gas transfer line for connecting the first reactive gas supply unit and the reactant chamber, a first bypass line for connecting the first reactive gas supply line and the exhaust line, a radical supply unit for generating radicals and selectively supplying the radicals to the reactant chamber or the exhaust line, a radical transfer line for connecting the radical supply unit and the reactant chamber, a second bypass line for connecting the radical supply unit and the exhaust line, and a main purge gas supply unit for supplying a main purge gas to the first reactant transfer line and/or the radical transfer line.

Abstract: A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included.

Abstract: Provided is a reaction chamber for depositing a thin film. The reaction chamber includes a reactor block; a wafer block located inside the reactor block; a top plate that covers the reactor block to maintain a predetermined pressure; a feeding unit which supplies reactive gases to the reactor block; a shower head, which is installed in the top plate and includes a plurality of first spray holes for spraying the first reactive gas on a wafer and a plurality of second spray holes for spraying the second reactive gas; and an exhaust unit which expels gases from the reactor block. The feeding unit includes a feeding block; a distributing block; two or more first gas transfer pipes; and a second gas transfer pipe. The shower head includes an upper diffusion block, an intermediate diffusion block, and a lower diffusion block.