Patents by Inventor Hyun-soon Kang

Hyun-soon Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11976975
    Abstract: Provided is an optical system which may acquire a hyperspectral image by acquiring a spectral image of an object to be measured, which includes, to collect spectral data and train the neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, a slit moving to scan the incident image and passing and outputting a part of the formed image, and a first optical part obtaining spectral data by splitting light of the image received through the slit by wavelength. Also, the system includes, to decompose overlapped spectral data and to infer hyperspectral image data through the trained neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, and a first optical part obtaining spectral data by splitting light of the received image by wavelength.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: May 7, 2024
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Keo Sik Kim, Kye Eun Kim, Jeong Eun Kim, Hyun Seo Kang, Hyun Jin Kim, Gi Hyeon Min, Si Woong Park, Hyoung Jun Park, Chan Il Yeo, Young Soon Heo
  • Patent number: 6396084
    Abstract: A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of a second conductivity type laterally enclosing the current path layer and extending to a depth deeper than the current path layer; and first and second metal layers formed respectively contacting upper and lower surfaces of the substrate. The current path layer has an impurity concentration higher than that of the substrate, and the current block layer has an impurity concentration higher than that of the current path layer. The current path layer is small enough for the portion below the current path layer to be completely blocked by the depletion region formed around the current block layer when a reverse bias or no is applied to the rectifier.
    Type: Grant
    Filed: August 13, 1999
    Date of Patent: May 28, 2002
    Assignee: Fairchild Korea Semiconductor LTD
    Inventors: Hyi-jeong Park, Hyun-soon Kang