Abstract: The present application relates to a hydrogen ion transport membrane, which is formed by using a porous thin film having a plurality of holes which are regularly aligned, a membrane for generating hydrogen, and a method for manufacturing the hydrogen ion transport membrane and the membrane for generating hydrogen.

Abstract: A substrate, at least one surface of which is partially or entirely flat, the substrate having: a substrate molded from first substrate-forming particles; second substrate-forming particles partially or entirely filled into first pores which are formed by the first substrate-forming particles on at least one surface of the substrate; and a polymer partially or entirely filled into second pores remaining in a region in which the second substrate-forming particles are filled. Also disclosed is a method for preparing a thin or thick film, including the aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that an a-axis, a b-axis, and/or a c-axis are oriented according to a certain rule; and exposing the aligned seed crystals to a solution for enabling the growth of the seed crystals to thereby form and grow a film from the seed crystals using a secondary growing technique.

Abstract: A synthetic gel for crystal growth, which induces only secondary growth from the surface of a silicalite-1 or zeolite beta seed crystal and cannot induce crystal nucleation in the synthetic gel for crystal growth or on the surface of the seed crystal. The synthetic gel contains fumed silica, tetraethylammonium hydroxide (TEAOH), [(NH4)2SiF6], KOH, and H2O, or contains tetraethylorthosilicate (TEOS), tetraethylammonium hydroxide (TEAOH), hydrogen fluoride, and H2O.

Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Abstract: The present application relates to a porous thin film having holes, wherein the holes are formed in the top part and/or the bottom part of the thin film and the holes are linked to the pores of the thin film; and the present invention also relates to a production method for a porous thin film having holes, comprising the use of a particle alignment layer as a mould.

Abstract: The present application relates to a porous thin film having holes, wherein the holes are formed in the top part and/or the bottom part of the thin film and the holes are linked to the pores of the thin film; and the present invention also relates to a production method for a porous thin film having holes, comprising the use of a particle alignment layer as a mold.

Abstract: The present invention provides a method for manufacturing a bowl-shaped structure, a bowl-shaped structure manufactured thereby, and a bowl array using the bowl-shaped structure, wherein the method for manufacturing the bowl-shaped structure comprises the following steps: putting into contact a first substrate, on which a particle alignment layer is formed, and a second substrate so as to transfer the particle alignment layer to the second substrate; forming a particle-thin film complex by coating the particle alignment layer that is transferred on the second substrate with a thin film formation substance; removing a portion of the thin film formation substance from the complex to expose particles, and then removing the exposed particles to form a template having a hole; and forming the bowl-shaped structure by coating a first substance on the surface of the hole of the template and then removing the template.

Abstract: The present application relates to a hydrogen ion transport membrane, which is formed by using a porous thin film having a plurality of holes which are regularly aligned, a membrane for generating hydrogen, and a method for manufacturing the hydrogen ion transport membrane and the membrane for generating hydrogen.

Abstract: A method for determining an operational status of a terminal includes transmitting, from a first processor to a second processor, a request for determining a status of the second processor; executing a timer operation for a time period; determining that the second processor is in a hang state if a response message is not received from the second processor within the time period; and transmitting a reboot command for rebooting the second processor. A terminal includes a first processor to transmit a status request message to a second processor, to initialize a timer to run until expiration of a time period, and to transmit a reboot command to a power management unit if the response message is not received within the time period; and the second processor to transmit a response message prior to expiration of the time period if the second processor is operating normally.

Abstract: The present application relates to a method for dispersing quantum dots (QDs) or quantum wires in zeolite, to zeolite containing quantum dots or quantum wires dispersed by the method, and to a method for stabilizing quantum dots or quantum wires in zeolite.

Abstract: Thin film transistor devices comprising a dielectric component and an inorganic semiconductor component coupled thereto, wherein said coupled inorganic semiconductor component is obtainable by a process that comprises contact of said dielectric component and a fluid medium comprising said inorganic semiconductor component.

Abstract: The present application relates to a porous thin film having holes, wherein the holes are formed in the top part and/or the bottom part of the thin film and the holes are linked to the pores of the thin film; and the present invention also relates to a production method for a porous thin film having holes, comprising the use of a particle alignment layer as a mould.

Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Abstract: The present invention relates to a novel method for producing titanium dioxide particles, and titanium dioxide particles produced thereby, and more specifically, to a novel method for producing titanium dioxide particles capable of producing titanium dioxide particles having uniform particle size through chemical reaction at a temperature equal to or lower than room temperature and can easily control the size of titanium dioxide particles, and titanium dioxide particles produced thereby, having a uniform particle size.

Abstract: Thin film transistor devices comprising a dielectric component and an inorganic semiconductor component coupled thereto, wherein said coupled inorganic semiconductor component is obtainable by a process that comprises contact of said dielectric component and a fluid medium comprising said inorganic semiconductor component.

Abstract: A b-oriented MFI zeolite membrane with variable thickness is provided. The MFI zeolite membrane is composed of zeolite crystals whose b-axes are all uniformly oriented perpendicular to a substrate. Further provided is a method for preparing the MFI zeolite membrane. The method comprises forming zeolite or zeotype molecular sieve seeds with different thicknesses on a substrate and adding the seeded substrate to a gel for the synthesis of an MFI zeolite containing a structure-directing agent to grow zeolite or zeotype molecular sieve crystals thereon. The MFI zeolite membrane overcomes the limitations of prior art zeolite membranes to maximize its applicability.

Abstract: Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices.

Abstract: A method for storing short message service (SMS) messages in a mobile communication terminal includes determining that a storing region corresponding to a Class of a new SMS message is full by detecting a transferable SMS message in the pertinent storing region, transferring the detected SMS message to another storing region, and storing the new SMS message in the pertinent storing region.

Abstract: Provided is a method for joining two strands of second-generation high-temperature superconducting wire, each of which includes a substrate, a buffer layer, a superconducting layer and a stabilizer layer. The method comprises: partially removing each of the stabilizer layers to expose a portion of the superconducting layer; bringing the exposed portions of the superconducting layers into contact with each other and fixing the superconducting layers to each other; heating the strands of superconducting wire to the melting point of the superconducting layers to melt-diffuse the superconducting layers in contact with each other and to join the strands of superconducting wire together; and oxidizing the junction between the strands of superconducting wire in an oxygen atmosphere (‘oxygenation annealing’). The oxygenation annealing restores the superconducting properties of the superconducting wires lost during the melting diffusion.