Abstract: A semiconductor laser apparatus is provided which can vary an output wavelength of a light source. A semiconductor laser diode and one or more heat source devices arranged around the semiconductor laser diode are integrated on one substrate. The semiconductor laser diode is configured to be uniformly heated by the heat source device. An output wavelength of the semiconductor laser diode can be easily and quickly varied.

Abstract: Provided are an optical cavity enhanced turbidimeter and a turbidity measure method. After casting a pulse beam or a beam having a steep intensity gradient into an optical cavity, the turbidity of the inside region of the optical cavity can be calculated using an attenuation rate of an output beam from the optical cavity.

Abstract: A silicon biosensor and a manufacturing method thereof is provided, the silicon biosensor includes: a light source performing self emission a light detector generating a photoelectric current corresponding to an amount of incident light an optical fiber transmitting the light from the light source to the light detector and a micro fluidic channel adjusting an optical transmission rate of the optical fiber according to an antibody-antigen reaction when the antibody-antigen reaction occurs. The silicon biosensor can be easily integrated or bonded with a silicon electronic device, so that it is possible to manufacture the biosensor with a low price, under mass production.

Abstract: Provided are a target biomaterial detecting kit and a method of detecting the target biomaterial. The target biomaterial detecting kit includes a guided mode resonance filter comprising a substrate transmitting or reflecting light, a grating layer formed on the substrate, and a capture layer formed on the grating layer to capture a target biomaterial; and a nano complex comprising a nanoparticle head and a connection tail. Therefore, the wavelength peak of a reflection/transmission spectrum of light coming from the guided mode resonance filter can be largely shifted, and thus the presence and quantity of a target biomaterial can be easily detected. Moreover, although the amount of the target biomaterial is small, the target biomaterial can be reliably detected.

Abstract: A silicon biosensor and a method of manufacturing the same are provided. The silicon biosensor includes: a light emitting layer emitting light according to injected electrons and holes and changing a wavelength of the light depending on whether a biomaterial is absorbed by the light emitting layer; an electron injection layer injecting the electrons into the light emitting layer; and a hole injection layer injecting the holes into the light emitting layer. Accordingly, it is possible to produce low price biosensors in large quantities.

Abstract: There are provided an apparatus for fixing a plastic sheet which fixes a plastic sheet to fabricate a nano pattern and a method of fabricating a nano pattern on a plastic sheet using the same. The apparatus for fixing a plastic sheet includes: a pair of planar metal guide rings interposingly fixing a plastic sheet from above and below, respectively; and a sheet fixing chuck including: a ring fixer sucking the pair of planar metal guide rings through a vacuum groove to be fixed thereto; and a sheet fixer having a plurality of vacuum pin holes formed therein, the vacuum pin holes sucking a bottom of the plastic sheet fixed by the planar metal guide rings. The apparatus allows fabrication of the nano pattern on the plastic sheet having less roughness than that of a semiconductor substrate or a glass substrate.

Abstract: There is provided a portable measuring system having a biophotonic sensor. The portable measuring system also includes a tunable light source, an output intensity detector and an output wavelength detector, which are mounted therein. The portable measuring system can precisely measure a variation in the reflectivity spectrum and/or the transmittance spectrum of the biophotonic sensor before and after an antigen-antibody reaction by varying the wavelength of the tunable light source. Thus, the concentration of the antigen is precisely measured.

Abstract: There is provided a method for immobilizing a bio-material on a surface of titanium dioxide nanoparticles (TiO2) as a highly reflective material to enhance sensitivity of a resonant reflection biosensor. The method for immobilizing a bio-material may be useful to easily immobilize bio-materials such as proteins, DNA, RNA and enzymes on surfaces of titanium dioxide (TiO2) nanoparticles using the chemical reaction, and significantly improve sensitivity of a resonant reflection biosensor by determining the antigen-antibody reaction in the resonant reflection biosensor using the immobilized secondary antien.

Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Abstract: Provided is an optical transceiver module of an optical transceiver, which is used for optical communications. The optical transceiver module prevents electrical crosstalk between a light source and a light receiver. Additionally, the optical transceiver module includes an optical transceiver unit including a light source and a light receiver together integrated into a substrate, a circuit unit including a drive circuit driving the light source and a detect circuit reading a signal of the light receiver, and a crosstalk prevention unit connected between the substrate and ground to prevent electrical crosstalk between the light source and the light receiver.

Abstract: Provided is a waveguide photodetector including: a first clad layer disposed on a substrate; a core layer disposed on the first clad layer and for absorbing predetermined light; a second clad layer disposed on the core layer; and at least one subsidiary layer inserted in the first clad layer and the second clad layer. In this structure, the photodetector has about the same spot size as that of an optical fiber or planar lightwave circuit (PLC), so that incident light can be absorbed without loss, and the photodetector can more efficiently combine with the optical fiber or PLC and operate even at high power.

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

Abstract: The SG-DFB laser diode of the present invention has a high output optical efficiency in comparison with a conventional wavelength tunable laser provided with Bragg reflection ends at the both ends of the gain region for the wavelength tuning as a structure capable of connecting an optical fiber directly without losing the optical wave generated at the gain region. And also, the present invention can be manufactured by the manufacturing process of a conventional wavelength tunable laser diode without reinvesting a new equipment. Further, the SG-DFB laser diode of the present invention can control a broadband wavelength with a simple circuit construction in comparison with a conventional wavelength tunable laser diode since it can vary the wavelength in continuous/incontinuous by the change of current of the each region of the phase control regions.

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.