Abstract: Described apparatuses and methods relate to adaptive refresh staggering for a memory system that may support a nondeterministic protocol. To help manage power-delivery networks in a memory system, a memory device can include logic that can be programmed to stagger the start of refresh operations for each die upon receiving a command to enter a lower-power mode, such as self-refresh. The staggered start can be implemented at a channel level, a package level, or both. The programming sets a delay for each die so that initiation of refresh operations is staggered. Thus, a first die can initiate refresh operations when a command to enter the lower-power mode is received (e.g., approximately zero delay). However, initiation of refresh operations for subsequent dies (e.g., “after” the first die) is delayed, which can reduce peak current draw and power consumption.

Abstract: Described apparatuses and methods provide system error correction code (ECC) circuitry routing that segregates even sense amp (SA) line data sets and odd SA line data sets in a memory, such as a low-power dynamic random-access memory. A memory device may include one or more dies, and a die can have even SA line data sets and odd SA line data sets. The memory device may also include ECC circuitry comprising one or more ECC engines. By segregating the data sets, instead of coupling even and odd SA line data sets to a single ECC engine, double-bit errors on a single word line may be separated into two single-bit errors. Thus, by utilizing system ECC circuitry routing in this way, even a one-bit ECC algorithm may be used to correct double bits, which may increase data reliability.

Abstract: Described apparatuses and methods enable communication between a host device and a memory device to establish relative delays between different data lines. If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command indicative of a phase offset between two or more data lines of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets between data lines. The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.

Abstract: Described systems, apparatuses, and methods relate to volatile memories that are refreshed to maintain data integrity, such as dynamic random-access memory (DRAM) and synchronous DRAM (SDRAM). A memory device includes multiple dies, with each die having a memory array to be refreshed. The multiple dies may be interconnected via at least one inter-die bus of the memory device. A memory controller sends a command to the memory device to enter a self-refresh mode. In response, a die of the multiple dies can enter the self-refresh mode and initiate or otherwise coordinate refresh operations of the other dies. To do so, the die may transmit at least one refresh-related command to at least one other die using the inter-die bus. Multiple different signaling schemes and timing approaches are disclosed. The described inter-die refresh control principles may be implemented in energy-efficient applications, such as in low-power double data rate (LPDDR) SDRAM.

Abstract: An electronic device includes a display layer in which an active region and a peripheral region proximate to the active region are defined and a controller that is configured to control the display layer. The display layer includes a plurality of pixels, a plurality of antenna patterns that transmit and receive a first signal having a predetermined frequency, and a switch connected to at least one of the plurality of antenna patterns. The controller provides, to the switch, a control signal to control the switch. The switch includes a first line to which a ground voltage is provided, a second line that is floated, a third line to which the first signal is provided, and a fourth line connected to the at least one of the plurality of antenna patterns and electrically connected to the first line, the second line, or the third line based on the control signal.

Abstract: A method for configuring an observable object as a digital twin in a digital twin system of any one domain is provided. The method for configuring a digital twin includes defining a purpose for expressing the observable as a digital twin in the domain, organizing data based on a role of the observable object in the domain, configuring the observable object into the digital twin based on the data for the purpose, and synchronizing the observable object and the digital twin.

Abstract: Systems, apparatuses, and methods related to a memory device and an associated host device are described. The memory device and the host device can include control logic that allow the memory device and host device to share refresh-timing information, which may allow either the memory device or the host, or both, to manage operations during time that is dedicated to, but unused for, refresh or self-refresh operations. Refresh-timing information shared from the host device may indicate elapsed time since the host device issued a refresh command to the memory device and/or how much time remains before the host device is scheduled to issue another refresh command. Refresh-timing information shared from the memory device may indicate elapsed time since the memory device performed a self-refresh operation and/or how much time remains before the memory device is scheduled to initiate or undergo another self-refresh operation.

Abstract: Described apparatuses and methods facilitate bus training with multiple dice, such as multiple memory dice. A controller can communicate with multiple dice over a bus to perform bus training by sending a test pattern and receiving in return a feedback pattern indicative of the bits detected by the dice. Because suitable signal timing can differ between dice, even those using the same bus, the controller may attempt to train each die separately from the others. In some situations, however, individualized training may be infeasible. To accommodate such situations, logic associated with two or more dice can combine the bits as detected from the test pattern into a combined feedback pattern. A timing parameter that is jointly suitable for multiple dice can be determined, and the bus training may be concluded, responsive to the combined feedback pattern matching the test pattern. The multiple dice may be stacked or linked.

Abstract: Described apparatuses and methods relate to adaptive memory registers for a memory system that may support a nondeterministic protocol. To help manage power-delivery networks in a memory system, a device includes logic that can write values to memory registers associated with memory blocks of a memory array. The values indicate whether an associated memory block has been refreshed within a refresh interval. Other logic can read the registers to determine whether a block has been refreshed. The device also includes logic that can access data indicating a row address that was most recently, or is next to be, refreshed and write values representing the address to another register. The register can be read by other logic to determine whether a wordline potentially affected by an activation-based disturb event is near to being refreshed. These techniques can reduce the number of refresh operations performed, saving power and reducing costs.

Abstract: Described apparatuses and methods facilitate bus training with multiple dice, such as multiple memory dice. A controller can communicate with multiple dice to perform bus training by sending a test pattern and receiving in return a feedback pattern indicative of the bits detected by the dice. Because suitable signal timing can differ between dice, even those using the same bus, a controller may train each die separately from the others. In some situations, however, individualized training may be infeasible. To accommodate such situations, logic associated with two or more dice can combine, using at least one logical operation, bits as detected from the test pattern into a combined feedback pattern. A timing parameter that is jointly suitable for multiple dice can be determined, and the bus training may be concluded, responsive to the combined feedback pattern matching the test pattern. The multiple dice may be stacked or linked.

Abstract: Apparatuses and techniques for implementing an asymmetric read-write sequence for interconnected dies are described. The asymmetric read-write sequence refers to an asymmetric die-access sequence for read versus write operations. The “asymmetric” term refers to a difference in an order in which data is written to or read from interface and linked dies of the interconnected die architecture. The orders for the read and write operations can be chosen such that a delay associated with transferring data between the interconnected dies occurs as data passes between the interface die and a memory controller. With asymmetric read-write burst sequences, overall timing of the read and write operations of a memory device may be impacted less, if at all, by a timing delay associated with the interconnected die architecture.

Abstract: Described apparatuses and methods provide automated error correction with memory refresh. Memory devices can include error correction code (ECC) technology to detect or correct one or more bit-errors in data. Dynamic random-access memory (DRAM), including low-power double data rate (LPPDR) synchronous DRAM (SDRAM), performs refresh operations to maintain data stored in a memory array. A refresh operation can be a self-refresh operation or an auto-refresh operation. Described implementations can combine ECC technology with refresh operations to determine a data error with data that is being refreshed or to correct erroneous data that is being refreshed. In an example, data for a read operation is checked for errors. If an error is detected, a corresponding address can be stored. Responsive to the corresponding address being refreshed, corrected data is stored at the corresponding address in conjunction with the refresh operation. Alternatively, data being refreshed can be checked for an error.

Abstract: Described apparatuses and methods enable communication between a host device and a memory device to establish relative delays between different data lines. If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command indicative of a phase offset between two or more data lines of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets between data lines. The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.

Abstract: Methods, apparatuses, and systems related to combining and utilizing multiple memory circuits having complementary characteristics are described. An apparatus may include a first memory circuit having a first emphasized characteristic and a second memory circuit having a second emphasized characteristic. The first and second memory circuits may be connected in parallel and to a common interface configured to communicate data between the apparatus and an external device.

Abstract: Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include a controller with logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.

Abstract: Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.

Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM) and an associated host device are described. The memory device and the host device can include control logic that enables the host device to transmit a burst value to the memory device, which may enable the memory device, the host, or both, to manage refresh operations during a normal operation mode or a self-refresh mode. The burst value can be transmitted to the memory device in association with a command (e.g., a command directing the memory device to enter the self-refresh mode). The burst value can specify a number of self-refresh operations to be initiated at the memory device in response to receiving the command. When the specified number of self-refresh operations are completed, regular self-refresh operations may begin, with an internal self-refresh timer counting an interval to the next self-refresh operation.

Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM), and an associated host device are described. The memory device includes control circuitry that can determine an operational status of the memory device (e.g., whether the memory device is currently performing a self-refresh operation). The control circuitry can also transmit a signal indicative of the operational status to the host device in response to receiving a command directing the memory device to exit a self-refresh mode. The host device can operate based on the signal. The signal may therefore allow the memory device, the host device, or both to manage operations, including whether to send, receive, or process commands and data read/write requests during times that may be associated with self-refresh operations.

Abstract: Disclosed herein is an apparatus that includes a plurality of memory banks and a refresh controller configured to perform a refresh operation on one or more of the plurality of memory banks having a first state without performing the refresh operation on one or more of the plurality of memory banks having a second state responsive to a first refresh command, and perform the refresh operation on a selected one of the plurality of memory banks responsive to a second refresh command. The refresh controller is configured to bring the selected one of the plurality of memory banks into the second state when the refresh operation is performed responsive to the second refresh command.

Abstract: Methods, systems, and devices for a source follower-based sensing architecture and sensing scheme are described. In one example, a memory device may include a sense circuit that includes two source followers that are coupled to each other and to a sense amplifier. A method of operating the memory device may include transferring a digit line voltage to one of the source followers and transferring a reference voltage to the other source follower. After transferring the digit line voltage and the reference voltage, the source followers may be enabled so that signals representative of the digit line voltage and the reference voltage are transferred from the outputs of the source followers to the sense amplifier for sensing.