Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

Abstract: The present application relates to a plasma polymer thin film and a method for preparing the same, the plasma polymer thin film prepared using a first precursor material represented by the following Chemical Formula 1: (In Chemical Formula 1, R1 to R9 are each independently H or a C1-C5 substituted or unsubstituted alkyl group, and when R1 to R9 are substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group).

Abstract: The present disclosure relates to a method of fabricating a substrate for culturing stem cells, including forming a plasma polymer layer from a precursor material on a substrate using plasma, and the precursor material contains a heteroaromatic compound or a linear compound.

Abstract: A plasma polymerized thin film having low dielectric constant prepared by depositing a first precursor material represented by the following Chemical Formula 1: wherein in the above Chemical Formula 1, R1 to R14 are each independently H or a substituted or non-substituted C1-C5 alkyl group, and when the R1 to R14 are substituted, their substituents comprise an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group.

Abstract: A plasma polymerized thin film having low dielectric constant prepared by depositing a first precursor material represented by the following Chemical Formula 1: wherein in the above Chemical Formula 1, R1 to R14 are each independently H or a substituted or non-substituted C1-C5 alkyl group, and when the R1 to R14 are substituted, their substituents comprise an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group.

Abstract: The present disclosure relates to a method of fabricating a substrate for culturing stem cells, including forming a plasma polymer layer from a precursor material on a substrate using plasma, and the precursor material contains a heteroaromatic compound or a linear compound.