Abstract: A vertical GaN-based LED is provided. The vertical GaN-based LED includes: an n-electrode; an n-type GaN layer formed under the n-electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer, the p-type GaN layer having a first uneven structure formed on a surface that does not contact the active layer; a p-type reflective electrode formed under the p-type GaN layer having the first uneven structure; and a support layer formed under the p-type reflective electrode.

Abstract: The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes an n-type electrode; an n-type nitride semiconductor layer that is formed to come in contact with the n-type electrode; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; an undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the undoped GaN layer; a reflecting layer that is formed on the AlGaN layer; a barrier that is formed so as to surround the reflecting layer; and a p-type electrode that is formed on the barrier.

Abstract: The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

Abstract: A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

Abstract: Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.