Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; a first insulating layer interposed between the first and second electrode layers, and provided adjacent to the first electrode layer; and a second insulating layer interposed between the first and second electrode layers, and provided adjacent to the second electrode layer, wherein the first and second insulating layers contain a plurality of neutral defects, a concentration of the plurality of neutral defects being at a maximum along a first interface between the first insulating layer and the second insulating layer, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Abstract: A neuromorphic device includes a row line extending in a first direction; a column line disposed over the row line, the column line extending in a second direction perpendicular to the first direction; a plurality of gating lines disposed between the row line and the column line; and a synapse disposed between the row line and the column line, the synapse passing through the plurality of gating lines.

Abstract: The present invention relates to a method for providing an app store service which implements 3rd party-based app stores by using a user's client and links the implemented app stores so as to be distributed by the 3rd party, and to a system for the same. The app store service system of the present invention includes: a plurality of app stores established for distribution; a mall integration server to manage the establishment and integrated operation of the plurality of app stores, and integrally analyze metadata collected from the plurality of app stores in order to provide app integration search and information on the basis of the plurality of app stores; and a client to perform integrated search and browsing for apps on the basis of the mall integration server and the app stores.

Abstract: A neuromorphic device including a convolution neural network is described. The convolution neural network may include an input layer having a plurality of input pixels, a plurality of kernel resistors, each of the kernel resistors corresponding to one of the plurality of input pixels, and an intermediate layer having a plurality of intermediate pixels electrically connected to the plurality of kernel resistors.

Abstract: A synapse array of a neuromorphic device is provided. The synapse array may include a pre-synaptic neuron; a row line extending from the pre-synaptic neuron in a row direction; a post synaptic neuron; a column line extending from the post-synaptic neuron in a column direction; and a synapse disposed at an intersection region between the row line and the column line. The synapse may include an n-type ferroelectric field effect transistor (n-FeFET) having a source electrode, a gate electrode and a body; a p-type ferroelectric field effect transistor (p-FeFET) having a source electrode, a gate electrode and a body; and a resistive element having a first node electrically connected to the source electrode of the n-FeFET and electrically connected to the source electrode of the p-FeFET, and the n-FeFET and the p-FeFET are electrically connected in series.

Abstract: A neuromorphic device having a synapse array is provided. The synapse array of the neuromorphic device may include an input neuron; an output neuron; and a synapse. The synapse may include a plurality of ferroelectric field effect transistors electrically connected to each other in parallel.

Abstract: A stacked semiconductor package includes a first semiconductor chip having a first active surface over which first bonding pads including peripheral bonding pads and central bonding pads are arranged, a first encapsulation member, two second semiconductor chips having second active surfaces over which second bonding pads are arranged at one side peripheries and disposed to be separated from each other such that the second active surfaces face the first active surface and the second bonding pads overlap with the peripheral bonding pads, first coupling members interposed between the peripheral bonding pads and the second bonding pads, a second encapsulation member formed over second side surfaces of the second semiconductor chips including a region between the second semiconductor chips, and a mold via formed through a portion of the second encapsulation member in the region between the second semiconductor chips and coupled with the central bonding pads.

Abstract: A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron, a synapse electrically connected with the pre-synaptic neuron through a row line, and a post-synaptic neuron electrically connected with the synapse through a column line. The post-synaptic neuron may include a post-neuron circuit and a post-neuron transfer function circuit electrically connected to the column line. The post-neuron transfer function circuit may include a first inverting circuit including at least one first pull-up transistor and at least two first pull-down transistors, the pull-down transistors being electrically connected with each other in parallel.

Abstract: A switching device includes a first electrode and a second electrode, and an electrolyte layer disposed between the first electrode and the second electrode. The electrolyte layer includes a first layer charged with negative charges and a second layer charged with positive charges.

Abstract: A neuromorphic device may include a pre-synaptic neuron, a row line extending from the pre-synaptic neuron in a row direction, a post-synaptic neuron, a column line extending from the post-synaptic neuron in a column direction, and a synapse coupled between the row line and the column line. The synapse may be disposed in an intersection region between the row line and the column line. The post-synaptic neuron may include a subtracting circuit.

Abstract: A synapse system of a neuromorphic device may include a pre-synaptic neuron; a pre-synaptic line extending from the pre-synaptic neuron in a first direction; a post-synaptic neuron; a post-synaptic line extending from the post-synaptic line in a second direction; a selecting controller; a selecting line extending from the selecting controller in a third direction; and a synapse electrically connected with the pre-synaptic line, the post-synaptic line, and the selecting line.

Abstract: A neuromorphic device may include: a plurality of row lines extending in a first direction; a plurality of additional row lines extending in the first direction; a plurality of column lines extending in a second direction that crosses the first direction; and a plurality of synapses positioned at intersections of the row lines, the additional row lines, and the column lines, wherein each of the synapses includes a transistor comprising a floating gate, a control gate insulated from the floating gate, a first junction, and a second junction, the control gate being coupled to a corresponding one of the plurality of row lines, the first junction being coupled to a corresponding one of the plurality of additional row lines, the second junction being coupled to a corresponding one of the plurality of column lines.

Abstract: A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron; a row line extending in a row direction from the pre-synaptic neuron; a post-synaptic neuron; a column line extending in a column direction from the post-synaptic neuron; and a synapse disposed at an intersection between the row line and the column line. The synapse may include a first synapse layer including a plurality of first carbon nano-tubes; a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes; and a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes.

Abstract: A neuromorphic device may include a pre-synaptic neuron, a row line extending in a row direction from the pre-synaptic neuron, a post-synaptic neuron, a column line extending in a column direction from the post-synaptic neuron, and a synapse disposed at an intersection region between the row line and the column line. The synapse may include a first node electrically connected with the row line, a second node electrically connected with the column line, and a variable resistor and a first transistor electrically coupled between the first node and the second node. The variable resistor and the first transistor may be electrically connected with each other in parallel.

Abstract: A neuromorphic device is provided. The neuromorphic device may include a plurality of pre-synaptic neuron circuits, a plurality of post-synaptic neuron circuits, and a plurality of synapses. Each of the synapses may be electrically connected to the plurality of pre-synaptic neuron circuits and a corresponding one of the plurality of post-synaptic neuron circuits. Each of the plurality of synapses may include a plurality of synapse cells. Each of the synapse cells may be electrically connected to a corresponding one of the plurality of pre-synaptic neuron circuits through a corresponding one of a plurality of row lines, respectively. Each of the synapse cells may be electrically connected to the corresponding one of the plurality of post-synaptic neuron circuits through one common column line.

Abstract: A neuromorphic device may include: a pre-synaptic neuron; a synapse electrically connected with the pre-synaptic neuron through a row line; and a post-synaptic neuron electrically connected with the synapse through a column line. The post-synaptic neuron may include a first inverter, the first inverter comprising a first pull-up transistor and a first pull-down transistor, a body of the first pull-up transistor and a body of the first pull-down transistor being electrically connected with a first output node of the first inverter.

Abstract: A neuromorphic device includes a pre-synaptic neuron, a synapse electrically coupled to the pre-synaptic neuron through a row line, and a post-synaptic neuron electrically coupled to the synapse through a column line. The post-synaptic neuron includes an integrator, a comparator, and an error corrector including an error detector and a correction signal generator. The comparator and the error corrector receive an output of the integrator.

Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; a first insulating layer interposed between the first and second electrode layers, and provided adjacent to the first electrode layer; and a second insulating layer interposed between the first and second electrode layers, and provided adjacent to the second electrode layer, wherein the first and second insulating layers contain a plurality of neutral defects, a concentration of the plurality of neutral defects being at a maximum along a first interface between the first insulating layer and the second insulating layer, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Abstract: A fuse element includes a gate; first to Nth junction regions disposed in an active region, where N is a natural number of 3 or more; and a dielectric layer interposed between the gate and the first to Nth junction regions, wherein a dielectric breakdown between the gate and each of the first to Nth junction regions is independently performed.

Abstract: A threshold switching device includes a first electrode layer, a second electrode layer, and an insulating layer interposed between the first and second electrode layers and including a plurality of neutral defects. The threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.