Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Abstract: Provided is an apparatus and method for sensing a three-dimensional (3D) object. The apparatus includes a display unit including a first sensing space in which a sensitivity with respect to a proximity touch is higher than a threshold value and a second sensing space in which a sensitivity with respect to the proximity touch is lower than the threshold value, on a stereoscopic space on which at least one 3D object is disposed and a controller for moving predetermined 3D objects in a predetermined direction if a proximity touch is generated on the second sensing space, detecting coordinates of a 3D object corresponding to a proximity touch generated on the first sensing space if the proximity touch generated on the second sensing space is moved and generated on the first sensing space, and performing a function corresponding to the 3D object.

Abstract: Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

Abstract: An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Abstract: Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.

Abstract: A method for rendering an object in a 3D graphic terminal includes constructing camera coordinates, based on vertex information of objects existing in a 3D space, and selecting one object in a left frustum and a right frustum, based on the constructed camera coordinates, wherein the left frustum is defined centered on a left virtual camera viewpoint, and the right frustum is defined centered on a right virtual camera viewpoint. The method further includes determining a binocular disparity by projecting vertexes of the selected object in the left frustum and the right frustum, and adjusting frustum parameters of the left virtual camera and the right virtual camera when the determined binocular disparity is greater than an allowable binocular disparity.

Abstract: A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Abstract: An apparatus and method display a world clock on the basis of an Augmented Reality (AR) scheme in a portable terminal. The method for displaying information in the portable terminal includes obtaining camera image data from a camera. The method also include searching for a city corresponding to a camera location and a camera viewpoint direction on the basis of a memory. The method further includes obtaining information on the found city and displaying the obtained information on the found city by compositing the information into the obtained camera image data.

Abstract: An apparatus and a method for generating and outputting stereoscopic images. A user can select either a barrier mode and an interlaced mode. In the barrier mode, images are generated in the barrier scheme, whereas in the interlaced mode, images are generated in the interlaced scheme. In a case where the user selects the interlaced mode, when the images are detected with the left and right camera sensors, the images are rotated by ?90 degrees and are then detected. Subsequently, stereoscopic images are generated from rotated images according to the barrier scheme, and generated images are stored along with information on a currently set image generation mode. Next, when the user desires to output the stored stereoscopic images through an interlaced output device for providing stereoscopic images in the interlaced scheme, the stored stereoscopic images are rotated by 90 degrees, and the rotated stereoscopic images are provided to the interlaced output device.

Abstract: A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.

Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Abstract: Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

Abstract: Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.

Abstract: Disclosed herein is a graded composition encapsulation thin film and a fabrication method thereof. The encapsulation thin film comprises a substrate, a graded composition layer and an anchoring layer interposed therebetween. The anchoring layer serves to improve the adhesion between the graded composition layer and the substrate and creates advantageous conditions for the formation of the graded composition layer. Due to the presence of the anchoring layer, the encapsulation thin film has excellent barrier properties against the permeation of moisture and oxygen and is highly resistant to diffusion of other chemical species.

Abstract: A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Abstract: A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.

Abstract: Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

Abstract: Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

Abstract: Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.

Abstract: A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.