Abstract: A method for determining intra-prediction modes for prediction units (PUs) of a largest coding unit (LCU) is provided that includes determining an intra-prediction mode for each child PU of a PU, and selecting an intra-prediction mode for the PU based on the intra-prediction modes determined for the child PUs.

Abstract: A pouch-type secondary battery includes an electrode assembly; and a pouch member comprising an internal space configured to accommodate the electrode assembly therein and a degassing sealing portion formed to project inwardly by sealing one end portion releasing internal gas.

Abstract: An apparatus for manufacturing a battery cell may include: a carrier transporting a battery cell to a worktable, wherein the carrier includes: a first plate pressing one surface of the battery cell; a second plate pressing the other surface of the battery cell opposite to the one surface; a clamping member pressing the first plate and the second plate in a direction in which the first plate and the second plate face each other; and a position alignment part disposed in at least one of the first plate and the second plate and aligning a position of at least one of the first plate and the second plate with respect to the worktable.

Abstract: An apparatus for manufacturing a battery cell for processing a sealing part of a battery cell, the sealing part being formed on one side of a body part in which an electrode assembly is accommodated, includes: a support unit including a first support portion and a second support portion supporting the battery cell in different directions; and a pressing unit moving toward the support unit to bend the sealing part, wherein the first support portion reciprocates in a first direction, the second support portion reciprocates in a second direction, and the second direction is inclined with respect to the first direction.

Abstract: Disclosed herein is an over-slam bumper for a vehicle. The over-slam bumper includes: a bumper unit (100) of which an end portion protrudes toward a door to absorb shock generated between a vehicle body and the door; and a mounting unit (200) coupled with the bumper unit (100) to fix the bumper unit to the vehicle body, wherein the bumper unit (100) includes: an elastic part for absorbing shock generated when getting in contact with the door; and a coupling part (116) connected to the elastic part and coupled with the mounting unit (200). The elastic part includes a buckling part (111) for absorbing shock by buckling; a compression part (130) for absorbing shock by compression; and an elastic air compression part for absorbing shock by sealing the inside air to compress inside air.

Abstract: Provided is an apparatus for manufacturing a battery cell. The apparatus for manufacturing a battery cell includes a plurality of rollers pressing at least a portion of an exterior material of the battery cell in a first direction toward the battery cell, wherein the plurality of rollers are movable in the direction toward the battery cell and include a first roller and a second roller having inclined surfaces inclined at different angles.

Abstract: A method and apparatus for frame coding in adaptive raster scan order. The method includes encoding at least one of image or video utilizing input frames and at least one of a data related to the input frame to produce bitstream with raster scan order information and displacement information for producing compressed video bitstream, at decoding time, decoding at least one of the encoded bitstream with raster scan order information and displacement information for producing compressed video bitstream.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a first semiconductor pattern that is on a substrate and that includes a first end and a second end that face each other, a first conductive line that is adjacent to a lateral surface of the first semiconductor pattern between the first and second ends and that is perpendicular to a top surface of the substrate, a second conductive line that is in contact with the first end of the first semiconductor pattern, is spaced part from the first conductive line, and is parallel to the top surface of the substrate, and a data storage pattern in contact with the second end of the first semiconductor pattern. The first conductive line has a protrusion that protrudes adjacent to the lateral surface of the first semiconductor pattern.

Abstract: A semiconductor package includes: a first semiconductor package including: a first frame having a first through portion, a first semiconductor chip in the first through portion and having a first surface on which a first connection pad is disposed and a second surface on which a second connection pad is disposed, and a through via connected to the second connection pad, a first connection structure on the first surface and including a first redistribution layer, and a backside redistribution layer on the second surface; and a second semiconductor package on the first semiconductor package and including: a second connection structure including a second redistribution layer, a second frame on the second connection structure and having a second through portion, and a second semiconductor chip in a second through portion and having a third surface on which a third connection pad is disposed.

Abstract: Provided are a ferritic stainless steel for automotive exhaust systems with improved heat resistance and condensate corrosion resistance and a method for manufacturing the same. The ferritic stainless steel according to an exemplary embodiment of the present invention includes a stainless steel base material comprising, in % by weight, C: 0.01% or less, Si: 0.5 to 1.0%, Mn: 0.5% or less, P: 0.035% or less, S: 0.01% or less, Cr: 11 to 18%, N: 0.013% or less, Ti: 0.15 to 0.5%, Sn: 0.03 to 0.5%, and the remainder of Fe and other inevitable impurities, and an Al-plated layer formed on the stainless steel base material, wherein the ferritic stainless steel comprises a plating compound comprising (Al19FeMnSi2)5.31 (Aluminum Iron Manganese Silicide) at an interface between the stainless steel base material and the Al-plated layer.

Abstract: A battery cell includes an accommodation portion accommodating an electrode assembly; and a sealed portion extending from a side surface of the accommodation portion externally, and being folded a plurality of times and fixed to be included within a thickness range of the accommodation portion, wherein the sealed portion includes a folded portion disposed to oppose the side surface of the accommodation portion and having a width narrower than the thickness range of the accommodation portion; and a connection portion connecting a center of the folded portion and the accommodation portion, wherein the folded portion includes at least one bent portion formed by folding the sealed portion by 180°.

Abstract: Several systems and methods for intra-prediction estimation of video pictures are disclosed. In an embodiment, the method includes accessing four ‘N×N’ pixel blocks comprising luma-related pixels. The four ‘N×N’ pixel blocks collectively configure a ‘2N×2N’ pixel block. A first pre-determined number of candidate luma intra-prediction modes is accessed for each of the four ‘N×N’ pixel blocks. A presence of one or more luma intra-prediction modes that are common among the candidate luma intra-prediction modes of at least two of the four ‘N×N’ pixel blocks is identified. The method further includes performing, based on the identification, one of (1) selecting a principal luma intra-prediction mode for the ‘2N×2N’ pixel block and (2) limiting a partitioning size to a ‘N×N’ pixel block size for a portion of the video picture corresponding to the ‘2N×2N’ pixel block.

Abstract: Provided is a method of preparing a graft polymer, which includes: polymerizing a monomer mixture comprising a carboxylic acid monomer and methyl acrylate, wherein the carboxylic acid monomer is included at 1.5 to 2.5 wt %, and thus preparing an acrylic coagulant having an average particle diameter of 60 to 70 nm; polymerizing diene-based monomers in the presence of an emulsifier containing a salt of a compound and thus preparing a first diene-based rubber polymer; enlarging the first diene-based rubber polymer using the acrylic coagulant and thus preparing a second diene-based rubber polymer; and graft-polymerizing an aromatic vinyl-based monomer and a vinyl cyanide-based monomer to the second diene-based rubber polymer and thus preparing a graft polymer.

Abstract: The present invention provides an acrylic copolymer coagulant which is a copolymer of a monomer mixture comprising a carboxylic acid-based monomer and an acrylic monomer, and a method of preparing a graft copolymer using the same. According to the present invention, a graft copolymer excellent in impact strength, surface gloss characteristics, and processability can be prepared.

Abstract: The present disclosure relates to a novel promoter and a method for producing L-amino acids using the promoter, and more specifically, to a novel polynucleotide having promoter activity, a vector and a microorganism of the genus Corynebacterium comprising the polynucleotide, a method for producing L-amino acids using the microorganism, and a fermented composition.

Abstract: A method and apparatus for frame coding in adaptive raster scan order. The method includes encoding at least one of image or video utilizing input frames and at least one of a data related to the input frame to produce bitstream with raster scan order information and displacement information for producing compressed video bitstream, at decoding time, decoding at least one of the encoded bitstream with raster scan order information and displacement information for producing compressed video bitstream.

Abstract: A microorganism of the genus Corynebacterium producing L-arginine, and a method for producing L-arginine using the same.

Abstract: A multilayer capacitor includes a capacitor body including first and second dielectric layers and internal electrodes, and including first to sixth surfaces; first and second external electrodes disposed on the fifth and sixth surfaces; and third and fourth external electrodes disposed on the third and fourth surfaces. The internal electrodes include: a first internal electrode disposed on the first dielectric layer and connected to the first and second external electrodes; a second internal electrode disposed on the first dielectric layer and connected to the third external electrode; a third internal electrode disposed on the first dielectric layer and connected to the fourth external electrode; and a fourth internal electrode disposed on the second dielectric layer and overlapping at least a portion of the first to third internal electrodes.

Abstract: A multilayer capacitor includes: a capacitor body including first and second dielectric layers, internal electrodes, and including first to six surfaces; first and second external electrodes disposed on the third and fourth surfaces, respectively; and third and fourth external electrodes disposed on the fifth and sixth surfaces, respectively. The internal electrodes include: first internal electrode disposed on the first dielectric layer, having both ends connected to the first and second external electrodes, respectively, and having a hole; a second internal electrode disposed on the second dielectric layer so as to overlap a portion of the first internal electrode and be connected to the third external electrode; and a third internal electrode disposed on the second dielectric layer so as to overlap a portion of the first internal electrode, be spaced apart from the second internal electrode, and be connected to the fourth external electrode.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a first semiconductor pattern that is on a substrate and that includes a first end and a second end that face each other, a first conductive line that is adjacent to a lateral surface of the first semiconductor pattern between the first and second ends and that is perpendicular to a top surface of the substrate, a second conductive line that is in contact with the first end of the first semiconductor pattern, is spaced part from the first conductive line, and is parallel to the top surface of the substrate, and a data storage pattern in contact with the second end of the first semiconductor pattern. The first conductive line has a protrusion that protrudes adjacent to the lateral surface of the first semiconductor pattern.