Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

Abstract: A semiconductor device includes a substrate including an active region, an insulation layer formed over the substrate, a plurality of openings formed in the insulation layer, a plurality of contact plugs filling the plurality of openings, a silicide layer formed over the substrate and between the substrate and each contact plug of the contact plugs in order to cover a bottom of each contact plug. The semiconductor device may decrease contact resistance by forming a silicide layer before the formation of openings regardless of the linewidth and aspect ratio of the openings. Also, because it does not have to consider step coverage based on the aspect ratio of openings, there is no limitation in the method of depositing a metal layer. Therefore, productivity may be improved.

Abstract: Methods for manufacturing a semiconductor device are provided that reduces the thickness of an oxide layer formed on a polysilicon layer for bit line contacts. A reduced thickness oxide layer can prevent short circuits between adjoining bit lines. A reduced thickness oxide layer can also eliminate the need for overetching in a subsequent etching process, thereby preventing loss of an isolation layer in a peripheral region.

Abstract: A bowl holder for a bowl adapted for serving a hot meal includes a top structure configured for a removable placement of the bowl into the bowl holder, a bottom plate, and sidewalls disposed between the top structure and the bottom plate near perimeters thereof.

Abstract: A system and method for processing signals in a mobile terminal routes received signals to signal processing units based on the bands in which the signals are located. Routing is preferably performed by a m-pole/n-throw electric switch where m?1 and n?1. The signal processing units may process signals in, for example, the DCN, PCS and GPS bands although other bands are possible. By using an electric switch instead of, for example, a diplexer circuit, the system and method significantly reduces insertion loss while simultaneously increasing the degree of isolation among the different bands of the received signals. Optimal receiver sensitivity is also achieved in each respective band.

Abstract: Disclosed is a method for depositing a silicon nitride layer of a semiconductor device. The method includes the steps of providing Al-based compound as a catalyst, and reacting DCS with NH3 by using the Al catalyst, thereby depositing the silicon nitride layer. DCS is reacted with NH3 by using the Al catalyst when depositing the silicon nitride layer, so dissolution of DCS is promoted by means of the Al catalyst, so that the silicon nitride layer is deposited at a high speed, thereby improving productivity of semiconductor devices. The silicon nitride layer is deposited by using DCS under a low-temperature condition of about 500 to 800° C., without deteriorating device characteristics.

Abstract: A system and method for processing signals in a mobile terminal routes received signals to signal processing units based on the bands in which the signals are located. Routing is preferably performed by a m-pole/n-throw electric switch where m≧1 and n≧1. The signal processing units may process signals in, for example, the DCN, PCS and GPS bands although other bands are possible. By using an electric switch instead of, for example, a diplexer circuit, the system and method significantly reduces insertion loss while simultaneously increasing the degree of isolation among the different bands of the received signals. Optimal receiver sensitivity is also achieved in each respective band.

Abstract: The invention relates to a method of forming wiring in a semiconductor device. In order to prevent a lift or a crack generated when nitride films having different physical properties come in contact, the invention uses a nitride film having a similar stress characteristic; a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a single type chamber capable of processing wafers one by one, and a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a batch type chamber capable of processing several sheet of wafers.

Abstract: A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.

Abstract: A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electrical characteristics of the capacitor are improved.

Abstract: A clothes washing machine has a sewage disposal apparatus using electrolysis for removing polluted matter such as surfactants, suspended solids and organic matter contained in the waste water. The electrolytic sewage disposal apparatus includes a sewage water processing tank having an inlet for receiving waste water, a processing chamber for processing the waste water, and an outlet for processed (purified) waste water. At least one pair of an anode and cathode is disposed in the processing chamber and is supplied with electric power.

Abstract: A clothes washing machine includes a rotary tub having a balancing apparatus at its upper end. The balancing apparatus comprises at least one annular chamber in which balls are movably disposed. A radially outer upright side surface of the chamber is inclined upwardly and outwardly so that the balls can ride up along that surface when the rotary speed of the tub exceeds a predetermined value. A plurality of chambers can be disposed, one above the other, wherein bottoms of the chambers are inclined obliquely relative to the axis of rotation, with the bottoms being out of phase with respect to one another by an angle equal to 360.degree. divided by the number of chambers.