Patents by Inventor Hyunkwang Jung

Hyunkwang Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10409126
    Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: September 10, 2019
    Assignees: SAMSUNG DISPLAY CO., LTD., KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Jihun Lim, Byung Du Ahn, Gun Hee Kim, Junhyun Park, Jehun Lee, Jaewoo Park, Dae Hwan Kim, Hyunkwang Jung, Jaehyeong Kim
  • Publication number: 20130271687
    Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
    Type: Application
    Filed: March 1, 2013
    Publication date: October 17, 2013
    Applicants: KOOKMIN UNIVERSITY ACADEMY COOPERATION FOUNDATION, SAMSUNG DISPLAY CO., LTD.
    Inventors: Jihun Lim, Byung Du Ahn, Gun Hee Kim, Junhyun Park, Jehun Lee, Jaewoo Park, Dae Hwan Kim, Hyunkwang Jung, Jaehyeong Kim