Abstract: Disclosed is a console operation device including a base plate, at least one solenoid disposed in the base plate, a guide rail disposed in front of the base plate, and a manipulator mounted on the guide rail to move on the guide rail, wherein the at least one solenoid includes a first magnet having a polarity, wherein the manipulator includes a second magnet having a polarity, wherein the manipulator is configured to be moved based on the polarities of the first and second magnets.

Abstract: A percutaneous absorption preparation is disclosed. The percutaneous absorption preparation contains donepezil for treatment of dementia, wherein the preparation includes: (a) donepezil or its pharmaceutically acceptable salt as active component, (b) propylene glycol monocaprylate as solubilizer, and (c) styrene-isoprene-styrene block copolymer (“SIS”) as adhesive. The percutaneous absorption preparation has low skin irritation and high skin penetration.

Abstract: An apparatus for fixing an insert member in a mold includes a groove formed on the inner circumferential surface of the insert member, a coupling protrusion protruding from the mold so that the insert member is inserted over the coupling protrusion, at least one hook member coupled to the mold such that a hook member moves between a protrusion position and a retreat position, and a driving unit for moving the at least one hook member between the protrusion position and the retreat position, wherein when the hook member is located at the protrusion position, the one end of the hook member engages with the groove of the insert member, and when the hook member is located at the retreat position, the one end of the hook member disengages from the groove of the insert member.

Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.

Abstract: A window member includes a main part including a first side extending in a first direction, a second side extending in a second direction, and a first corner side connecting the first and second sides. The window member further includes a first side part in contact with the first side, a second side part in contact with the second side, and a first corner part connecting the first and second side parts. The first corner part includes a first upper corner part, a first middle corner part, and a first lower corner part. A lower surface of the first middle corner part has a first radius of curvature, a lower surface of the first lower corner part has a second radius of curvature, and the first radius of curvature is greater than the second radius of curvature.

Abstract: A display apparatus including a display and a supporter. The supporter being mounted on the display and configured to support the display and rotate the display module between a first position and a second position. The supporter including a drive motor, a first gear, and a detection sensor. The drive motor configured to supply a driving force to rotate the display. The first gear configured to rotate together with the display by receiving the driving force from the drive motor. The detection sensor configured to detect a rotation amount of a second gear configured to rotate in with the first gear.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: The present disclosure relates to a method of reducing a Peak to Average Power Ratio (PAPR) in a communication device, and more particularly, to a method of Crest Factor Reduction (CFR) processing of a signal in order to reduce a PAPR in a communication device such as a repeater. The communication device includes: a first CFR module configured generate a first processed signal by CFR processing an original signal; and a second CFR module configured generate a second processed signal by CFR processing the first processed signal, wherein the first processed signal is generated using a first sampling rate, and the second processed signal is generated using a second sampling rate. According to the disclosure, even a communication device with a low sampling rate may effectively remove a peak component of an input signal.

Abstract: A direct water purifier includes a first filter for filtering water introduced through a first flow path; a second filter for receiving the water supplied from the first filter through a second flow path and filtering the same; a first valve disposed in the second flow path to control water flow; a pump disposed in the second flow path to supply water having a predetermined hydraulic pressure or higher to the second filter; a third filter for receiving the water supplied from the second filter through a third flow path and filtering the same; a heating part for receiving the water supplied from the third filter and heating the same to a predetermined temperature; and a flushing valve disposed in a flushing flow path through which concentrated water is discharged from the second filter, wherein the flushing valve is opened during operation of the heating part.

Abstract: A direct water purifier includes a first filter for filtering water introduced through a first flow path; a second filter for receiving the water supplied from the first filter through a second flow path and filtering the same; a first valve disposed in the second flow path to control water flow; a pump disposed in the second flow path to supply water having a predetermined hydraulic pressure or higher to the second filter; a third filter for receiving the water supplied from the second filter through a third flow path and filtering the same; a heating part for receiving the water supplied from the third filter and heating the same to a predetermined temperature; and a flushing valve disposed in a flushing flow path through which concentrated water is discharged from the second filter, wherein the flushing valve is opened during operation of the heating part.

Abstract: A method for manufacturing a three-dimensional memory device includes forming a lower multi-layered stack by alternately stacking a plurality of first dielectric layers and a plurality of first sacrificial layers on a substrate; forming an etch stop layer on the lower multi-layered stack; forming an upper multi-layered stack by alternately stacking a plurality of second dielectric layers and a plurality of second sacrificial layers on the etch stop layer; forming a vertical trench by etching the upper multi-layered stack using the etch stop layer as an etch end target; removing the etch stop layer under the vertical trench; and forming a first stairway-shaped trench in the lower multi-layered stack under the vertical trench, and forming a second stairway-shaped trench in the upper multi-layered stack.

Abstract: Disclosed is a water purifier. A water purifier according to one example of the present invention includes: a filter unit including a reverse osmosis filter; a water outlet unit including a water outlet member connected to the filter; and a control unit for discharging water filtered by the filter unit to the outside through the water outlet member, wherein the reverse osmosis filter is provided with a reverse osmosis film that divides the reverse osmosis filter into a non-filtering side and a filtering side, and the control unit causes the filtering side to be flushed before the water filtered by the filter unit is discharged through the water outlet member, and can cause the non-filtering side to be flushed after the water filtered by the filter unit is discharged through the water outlet member.

Abstract: A three-dimensional semiconductor device includes a peripheral circuit device layer that includes a page buffer area, a pass transistor area adjacent to the page buffer layer, and a logic transistor area adjacent to the pass transistor area in the first direction, and a memory cell device layer that includes a cell area and a staircase area extending from the cell area. The peripheral circuit device layer includes transistors, peripheral circuit via plugs, and peripheral circuit interconnection layers on a substrate. The memory cell device layer includes word line stack including interlayer insulating layers and word lines alternately stacked, the word line stack including end portions stacked in a staircase in the staircase area; a bit line array including bit lines arranged in the cell area; and word line pillars electrically connected to the end portions of the word lines in the staircase area, respectively.

Abstract: A semiconductor device includes a first semiconductor chip including a memory cell array and a plurality of bit lines; a second semiconductor chip including a peripheral circuit, and bonded to the first semiconductor chip; and a shielding member including a link pattern that is configured in a bonding metal layer of any one of the first semiconductor chip and the second semiconductor chip, and has a grid shape or stripe shapes, and a plurality of island patterns that are configured in a bonding metal layer of the other one of the first semiconductor chip and the second semiconductor chip, and bonded to the link pattern.

Abstract: A semiconductor device includes a stack including a plurality of electrode layers which include a plurality of capacitor first electrode layers and a plurality of capacitor second electrode layers alternately stacked on a substrate and a plurality of dielectric layers which are disposed alternately with the plurality of electrode layers; a first conductive pillar passing through the stack and coupled to the plurality of capacitor first electrode layers; a second conductive pillar passing through the stack and coupled to the plurality of capacitor second electrode layers; and a plurality of insulation layer patterns insulating the first conductive pillar and the plurality of capacitor second electrode layers from each other and insulating the second conductive pillar and the plurality of capacitor first electrode layers from each other.

Abstract: A memory device may include an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers that are alternately stacked on a substrate; a trench in the electrode structure, and having an upper sidewall, a lower sidewall and a horizontal portion that couples the upper sidewall to the lower sidewall and that is parallel to a top surface of the substrate; a dielectric layer in the trench; and a slimming hole in the electrode structure having a sidewall of the trench and a region of the dielectric layer, and having a bottom surface disposed on an electrode layer on which the horizontal portion of the trench is positioned.

Abstract: A semiconductor memory device includes a first semiconductor layer including a memory cell array; a second semiconductor layer including a first substrate and a page buffer circuit which is configured on the first substrate; a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer in a vertical direction, and including a second substrate and a second logic circuit which is configured on an element region of the second substrate; and a first contact plug passing through a coupling region of the second substrate which overlaps the page buffer circuit in the vertical direction.

Abstract: A three-dimensional memory device and a manufacturing method thereof. The three-dimensional memory device includes an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a substrate; and a plurality of through holes passing through the electrode structure in a vertical direction, and including pad regions at the transition between portions of the through holes have different widths.

Abstract: A memory device includes a plurality of bit lines extending in a first direction and arranged in a second direction; and a cell region including a plane which is coupled to the plurality of bit lines, wherein the plane is divided into a plurality of memory groups each including a plurality of partial pages to be disposed in a plurality of rows in the first direction.

Abstract: Disclosed is a condenser for a water purifier, comprising a pipe provided with a plurality of bending parts which are disposed so as to be vertically overlapping with one another, cooling wires provided on the upper and lower surfaces of the plurality of bending parts; and fixing members for fixing the cooling wires. The cooling wires that are provided on the surfaces, facing each other, of the plurality of bending parts are disposed so as to alternate with each other.