Abstract: An optical apparatus adapted to contact an object is provided. The optical apparatus includes an optical device and a processing circuit. The optical device includes a reflection structure and a transmission structure. The optical device senses light signals of the object via the reflection structure and the transmission structure. The processing circuit is electrically connected to the optical device. The processing circuit is configured to identify the object according to the light signals. In addition, a method for identifying an object is also provided.

Abstract: An optical device including a first substrate, a light source, a second substrate, an image capturing device, a microstructure layer, and an infrared pass layer is provided. The light source is disposed on the first substrate. The second substrate is disposed above the first substrate. The second substrate includes a first surface and a second surface opposite to the first surface. The image capturing device is disposed on the first substrate to receive a light beam, which is originated from scattered light beams scattered by an object touching the first surface of the second substrate. The microstructure layer is disposed on the first surface of the second substrate. The microstructure layer is adapted to increase a light beam, which is scattered by the object and transmitted to the image capturing device. The infrared pass layer is adapted to pass the infrared light.

Abstract: A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter, corresponding to a first wavelength range of a first color; at least one second filter, corresponding to a second wavelength range of a second color; at least one third filter, corresponding to a third wavelength range of a third color; at least one fourth filter, corresponding to a first infrared wavelength range, wherein the first infrared wavelength range is an intersection of the first wavelength range and the second wavelength range; and at least one fifth filter, corresponding to a second infrared wavelength range, wherein the second infrared wavelength range is an intersection of the first wavelength range and the third wavelength range.

Abstract: The invention provides an optical device. The optical device includes an image capture unit, at least one light emitting device, and a light conductor. The light conductor defines a space above a substrate on which the image capture unit is disposed. The light conductor includes a central portion and a surrounding portion. The central portion is disposed above the space and has a first surface relatively far from the image capture unit and a second surface opposite to the first surface and relatively close to the image capture unit. The surrounding portion is connected to the central portion and surrounding the space. The surrounding portion includes a reflection surface connected to the first surface and tilted at an angle toward the image capture unit with respect to a plane of the first surface. The reflection surface is adapted to perform total reflection.

Abstract: A color filter array for an image sensing device is disclosed. The color filter array includes a plurality of pixels and a control unit. The plurality of pixels is utilized for generating a plurality of pixel data of an image. The control unit is utilized for controlling the plurality of pixels. In addition, each of the plurality of pixels is divided into a plurality of sub-pixels corresponding to the same color. When outputting the plurality of pixel data, each of the plurality of pixels accumulates pixel value of at least one of the plurality of sub-pixels in each of the plurality of pixels as the pixel data outputted by each of the plurality of pixels.

Abstract: A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter, corresponding to a first wavelength range of a first color; at least one second filter, corresponding to a second wavelength range of a second color; at least one third filter, corresponding to a third wavelength range of a third color; at least one fourth filter, corresponding to a first infrared wavelength range, wherein the first infrared wavelength range is an intersection of the first wavelength range and the second wavelength range; and at least one fifth filter, corresponding to a second infrared wavelength range, wherein the second infrared wavelength range is an intersection of the first wavelength range and the third wavelength range.

Abstract: An image sensor including a plurality of sensing pixels, a plurality of micro-lenses disposed on the sensing pixels and a plurality of first light distributing elements disposed between the sensing pixels and the micro-lenses is provided. Each of the first light distributing elements includes a first refractive index pattern and a second refractive index pattern surrounding the first refractive index pattern. The refractive index of the first refractive index pattern is larger than the refractive index of the second refractive index pattern.

Abstract: An image sensor including a plurality of sensing pixels, a plurality of micro-lenses disposed on the sensing pixels and a plurality of first light distributing elements disposed between the sensing pixels and the micro-lenses is provided. Each of the first light distributing elements includes a first refractive index pattern and a second refractive index pattern surrounding the first refractive index pattern. The refractive index of the first refractive index pattern is larger than the refractive index of the second refractive index pattern.

Abstract: An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Abstract: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the micro-wells.

Abstract: A 3D color image sensor and a 3D optical imaging system including the 3D color image sensor are provided. The 3D color image sensor includes a semiconductor substrate, having a plurality of first photodiodes and a plurality of second photodiodes, and a wiring layer formed under the first photodiodes and the second photodiodes. A light filter array layer is disposed on the first and the second photodiodes, having a plurality of color filter patterns and infrared (IR) light filter patterns, wherein each of the IR light filter patterns receives depth information of 3D color image of an object and corresponds to the first photodiode, and each of the color filter patterns receives color image information of 3D color image of the object and corresponds to the second photodiode.

Abstract: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the mirco-wells.

Abstract: An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Abstract: A three-way optical device includes a case, a sleeve connected to one of openings of the case, photoelectric elements disposed in one of the openings, and optical filters. Each photoelectric element is associated with an optical signal. Each optical filter is located in the case, corresponding to at least two photoelectric elements, and each optical filter is disposed on an optical path of optical signals associated with the at least two corresponding photoelectric elements. Each optical filter enables the optical signal associated with at least one photoelectric element to penetrate and reflects optical signals associated with the remaining corresponding photoelectric elements, in which the optical signals reflected by the optical filter and penetrating the same optical filter have different wavelengths.

Abstract: A tool assembly includes a plurality of bolts each having a head and a shank extending from the head in an axial direction. The head of each bolt includes a groove opposed to the shank. The grooves of the bolts are of differing depths in the axial direction. The groove of each bolt includes a polygonal recessed section and a conical section extending from the recessed section away from the shank and having increasing diameters away from the shank. The conical section includes inner walls at an acute angle with the axial direction. The recessed sections of the bolts are of identical conicity but of different lengths in the axial direction. A driver includes an operative end having a first polygonal driving portion of a size corresponding to the recessed section of each bolt and a conical driving portion of a size and conicity corresponding to the conical section of each bolt.