Abstract: A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: An adaptive grid generating method includes obtaining a first three-dimensional grid of a target structure; importing the first three-dimensional grid into a computer-aided engineering software to obtain a first two-dimensional planar grid; importing the first two-dimensional planar grid into a grid cleaning software to obtain a second two-dimensional planar grid; and importing the second two-dimensional planar grid into the computer-aided engineering software to obtain a second three-dimensional grid.

Abstract: A vehicle lamp for installing on a vehicle includes a projector lens, a reflector, a first light emitting element, a shield, and an optical grating unit. The projector lens has a light entry surface and a light exit surface. The first light emitting element is adjacent to a first focal point of the reflector, and is for emitting light towards the reflector. The shield is for blocking a portion of the light that is emitted from the first light emitting element to form a cut-off line in a light distribution pattern. The optical grating unit is for reflecting at least a portion of the light that has passed a second focal point of the reflector and that has not passed through the light exit surface of the projector lens.

Abstract: A vehicle lamp adapted to be installed on a vehicle includes a projector lens, a reflector, a light emitting element, and a grating plate. The projector lens has a light entry surface and alight exit surface. The light emitting element is disposed for emitting light towards the reflector, such that the light is reflected by the reflector to pass through the projector lens to form a light distribution pattern. The grating plate is for reflecting at least a portion of the light that has traveled ahead of a second focal point of the reflector and that has not passed through the light exit surface of the projector lens. An extension of the grating plate and the optical axis defines an angle between 0 degree and 45 degrees.

Abstract: A vehicle lamp adapted to be installed on a vehicle includes a projector lens, a reflector, a light emitting element, and a grating plate. The projector lens has a light entry surface and alight exit surface. The light emitting element is disposed for emitting light towards the reflector, such that the light is reflected by the reflector to pass through the projector lens to form a light distribution pattern. The grating plate is for reflecting at least a portion of the light that has traveled ahead of a second focal point of the reflector and that has not passed through the light exit surface of the projector lens. An extension of the grating plate and the optical axis defines an angle between 0 degree and 45 degrees.

Abstract: A vehicle lamp for installing on a vehicle includes a projector lens, a reflector, a first light emitting element, a shield, and an optical grating unit. The projector lens has a light entry surface and a light exit surface. The first light emitting element is adjacent to a first focal point of the reflector, and is for emitting light towards the reflector. The shield is for blocking a portion of the light that is emitted from the first light emitting element to forma cut-off line in a light distribution pattern. The optical grating unit is for reflecting at least a portion of the light that has passed a second focal point of the reflector and that has not passed through the light exit surface of the projector lens.

Abstract: The present invention provides an LED light device, including: a heat sink having a layered structure formed by a plurality of tubes; and a sub-mount positioned on the heat sink and mounted with an LED emitter.