Patents by Inventor I-Shan Sun
I-Shan Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9401401Abstract: There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disposed below the first body region. A bottom surface of the second body region is not coplanar with a bottom surface of the deep well region, and the first body region has a different conductivity type from the second body region.Type: GrantFiled: March 18, 2014Date of Patent: July 26, 2016Assignee: Magnachip Semiconductor, Ltd.Inventors: Francois Hebert, I-Shan Sun, Youngbae Kim, Youngju Kim, Kwangil Kim, Intaek Oh, Jinwoo Moon
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Patent number: 9257525Abstract: A method for through active-silicon via integration is provided. The method comprises forming an electrical device in a handle wafer. The method also comprises forming an isolation layer over the handle wafer and the electrical device and joining an active layer to the isolation layer. Further, the method comprises forming at least one trench through the active layer and the isolation layer to expose a portion of the handle wafer and depositing an electrically conductive material in the at least one trench, the electrically conductive material providing an electrical connection to the electrical device through the active layer.Type: GrantFiled: October 27, 2011Date of Patent: February 9, 2016Assignee: Intersil Americas LLCInventors: I-Shan Sun, Rick Carlton Jerome, Francois Hebert
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Patent number: 9245997Abstract: A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.Type: GrantFiled: August 6, 2014Date of Patent: January 26, 2016Assignee: Magnachip Semiconductor, Ltd.Inventors: Francois Hebert, I-Shan Sun, Young Bae Kim, Young Ju Kim, Kwang Il Kim, In Taek Oh, Jin Woo Moon
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Publication number: 20150194544Abstract: A light sensor includes a photodetector sensor region formed in a semiconductor substrate. To shape the spectral response of the light sensor, a dielectric optical coating filter covers the photodetector sensor region and a circumferential region of the substrate that surrounds the photodetector sensor region. In accordance with specific embodiments, the dielectric optical coating filter has chamfered corners to improve the thermal reliability of the dielectric optical coating covering the photodetector sensor region. Methods for making such a light sensor are also disclosed.Type: ApplicationFiled: March 24, 2015Publication date: July 9, 2015Inventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Patent number: 9024404Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In an embodiment, a light sensor includes a photodetector sensor region formed in a semiconductor substrate, a dielectric optical coating filter covering the photodetector sensor region, and dummy dielectric optical coating features beyond the photodetector sensor region, wherein the dummy dielectric optical features include one or more dummy corners, dummy islands and/or dummy rings. Alternatively, or additionally, the dielectric optical coating filter includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.Type: GrantFiled: July 31, 2014Date of Patent: May 5, 2015Assignee: Intersil Americas LLCInventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Publication number: 20150102444Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In an embodiment, a light sensor includes a photodetector sensor region formed in a semiconductor substrate, a dielectric optical coating filter covering the photodetector sensor region, and dummy dielectric optical coating features beyond the photodetector sensor region, wherein the dummy dielectric optical features include one or more dummy corners, dummy islands and/or dummy rings. Alternatively, or additionally, the dielectric optical coating filter includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.Type: ApplicationFiled: July 31, 2014Publication date: April 16, 2015Inventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Publication number: 20150041894Abstract: A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.Type: ApplicationFiled: August 6, 2014Publication date: February 12, 2015Applicant: MAGNACHIP SEMICONDUCTOR, LTD.Inventors: Francois Hebert, I-Shan Sun, Young Bae Kim, Young Ju Kim, Kwang Il Kim, In Taek Oh, Jin Woo Moon
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Publication number: 20150041892Abstract: There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a source region disposed apart from a drain region, a first body region surrounding the source region, a deep well region disposed below the drain region, and a second body region disposed below the first body region. A bottom surface of the second body region is not coplanar with a bottom surface of the deep well region, and the first body region has a different conductivity type from the second body region.Type: ApplicationFiled: March 18, 2014Publication date: February 12, 2015Applicant: MAGNACHIP SEMICONDUCTOR, LTD.Inventors: Francois HEBERT, I-Shan SUN, Youngbae KIM, Youngju KIM, Kwangil KIM, Intaek OH, Jinwoo MOON
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Patent number: 8836064Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.Type: GrantFiled: June 22, 2012Date of Patent: September 16, 2014Assignee: Intersil Americas LLCInventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Publication number: 20140001588Abstract: Monolithic optical sensor devices, and methods for fabricating such devices, are described herein. In an embodiment, a semiconductor wafer substrate includes a plurality of photodetector (PD) regions. A wafer-level inorganic dielectric optical filter is deposited and thereby formed over at least a subset of the plurality of PD regions. One or more wafer-level organic color filter(s) is/are deposited and thereby formed on one or more selected portion(s) of the wafer-level inorganic dielectric optical filter that is/are over selected ones of the PD regions. For example, an organic red filter, an organic green filter and an organic blue filter can be over, respectively, portions of the wafer-level inorganic dielectric optical filter that are over first, second and third PD regions.Type: ApplicationFiled: June 28, 2012Publication date: January 2, 2014Applicant: INTERSIL AMERICAS LLCInventors: Michael I-Shan Sun, Francois Hebert, Kenneth C. Dyer, Eric S. Lee
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Publication number: 20130249032Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.Type: ApplicationFiled: June 22, 2012Publication date: September 26, 2013Applicant: INTERSIL AMERICAS LLCInventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Publication number: 20130252369Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.Type: ApplicationFiled: June 22, 2012Publication date: September 26, 2013Applicant: INTERSIL AMERICAS LLCInventors: Eric S. Lee, Michael I-Shan Sun, Francois Hebert
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Publication number: 20120313201Abstract: Optical sensor devices, and methods of manufacturing the same, are described herein. In an embodiment, a monolithic optical sensor device includes a semiconductor substrate having a trench, with a photodetector region under said trench. An optical filter is formed in the trench and over at least a portion of the photodetector region. One or more metal structures extend above a top surface of said optical filter. The trench, photodetector region and optical filter are formed as part of a front-end-of-line (FEOL) semiconductor fabrication process. The one or more metal structures are formed as part of a back-end-of-line (BEOL) semiconductor fabrication process.Type: ApplicationFiled: May 8, 2012Publication date: December 13, 2012Applicant: INTERSIL AMERICAS LLCInventors: Francois Hebert, Jonathan Herman, I-Shan Sun
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Publication number: 20120293474Abstract: Systems and methods for facilitating lift-off processes are provided. In one embodiment, a method for pattering a thin film on a substrate comprises: depositing a first sacrificial layer of photoresist material onto a substrate such that one or more regions of the substrate are exposed through the first sacrificial layer; depositing a protective layer over at least part of the first sacrificial layer; partially removing the first sacrificial layer to form at least one gap between the protective layer and the substrate; depositing an optical coating over the protective layer and the one or more regions of the substrate exposed through the first sacrificial layer, wherein the optical coating deposited over the protective layer is separated by the at least one gap from the optical coating deposited over the regions of the substrate exposed through the first sacrificial layer; and removing the first sacrificial layer.Type: ApplicationFiled: September 15, 2011Publication date: November 22, 2012Applicant: INTERSIL AMERICAS INC.Inventors: I-Shan Sun, Francois Hebert, Rick Carlton Jerome
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Publication number: 20120288083Abstract: A method for through active-silicon via integration is provided. The method comprises forming an electrical device in a handle wafer. The method also comprises forming an isolation layer over the handle wafer and the electrical device and joining an active layer to the isolation layer. Further, the method comprises forming at least one trench through the active layer and the isolation layer to expose a portion of the handle wafer and depositing an electrically conductive material in the at least one trench, the electrically conductive material providing an electrical connection to the electrical device through the active layer.Type: ApplicationFiled: October 27, 2011Publication date: November 15, 2012Applicant: INTERSIL AMERICAS INC.Inventors: I-Shan Sun, Rick Carlton Jerome, Francois Hebert
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Publication number: 20110249134Abstract: An imaging system, semiconductor device, and method of manufacture of a photo-detector device are disclosed. For example, an imaging system is disclosed, which includes a photo-detector unit including a plurality of conductive trenches formed within the photo-detector unit, and a plurality of electrical contacts, each electrical contact connected to a respective conductive trench. The imaging system further includes a light data processor unit coupled to an output of the photo-detector unit to convert an analog signal received from the photo-detector unit to a digital signal, a processing unit coupled to an output of the light data processor unit to generate a control signal in response to the digital signal, and a display unit coupled to an output of the processing unit to vary the intensity of an image displayed in response to the control signal.Type: ApplicationFiled: November 3, 2010Publication date: October 13, 2011Applicant: INTERSIL AMERICAS INC.Inventors: Aaron M. Dennison-Gibby, David W. Ritter, Philip Golden, Carl Warren Craddock, I-Shan Sun
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Publication number: 20060060941Abstract: Consistent with an aspect of the present invention, a lateral bipolar transistor is provided that exhibits similar performance as that of high speed vertical bipolar junction transistors. The lateral bipolar transistor includes a polysilicon side-wall-spacer (PSWS) that forms a contact with the base of the transistor, and thus avoids the process step of aligning a contact mask to a relatively thin base region. The side wall spacer allows self-alignment of the base/emitter region, and has reduced base resistance and junction capacitance. Accordingly, improved cutoff frequency (f?) and maximum oscillation frequency (fmax) can be achieved. Moreover, this novel topology enables the realization of Bipolar CMOS (BiCMOS) technology on insulating substrates, such as SOI.Type: ApplicationFiled: August 25, 2005Publication date: March 23, 2006Inventors: I-Shan Sun, Wai Ng, Koji Kanekiyo