Patents by Inventor I-Ting KUO
I-Ting KUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11889771Abstract: A method for mitigating moisture driven degradation of silicon doped chalcogenides includes placing a silicon doped chalcogenide composition in a process chamber, passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas or with hydrogen plasma, purging the forming gas or the hydrogen plasma from the process chamber, and removing the passivated silicon doped chalcogenide composition from the process chamber.Type: GrantFiled: December 29, 2020Date of Patent: January 30, 2024Assignees: International Business Machines Corporation, Macronix International Co., Ltd.Inventors: Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Robert L. Bruce, Martin Michael Frank, Hiroyuki Miyazoe
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Publication number: 20220209113Abstract: A method for mitigating moisture driven degradation of silicon doped chalcogenides includes placing a silicon doped chalcogenide composition in a process chamber, passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas or with hydrogen plasma, purging the forming gas or the hydrogen plasma from the process chamber, and removing the passivated silicon doped chalcogenide composition from the process chamber.Type: ApplicationFiled: December 29, 2020Publication date: June 30, 2022Inventors: Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Robert L. Bruce, Martin Michael Frank, Hiroyuki Miyazoe
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Patent number: 11355552Abstract: A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.Type: GrantFiled: August 6, 2020Date of Patent: June 7, 2022Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Publication number: 20220123209Abstract: A switching device having a first electrode, a second electrode, and a switching layer between the first and second electrodes, formed using a chalcogenide composition doped with an element that suppresses oxidation, which results in improved manufacturability and yield. For selector material based on AsSeGeSi or other chalcogenide materials that include selenium or arsenic, or other chalcogenide materials that include selenium or arsenic and silicon, the element added to suppress oxidation can be sulfur.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG, Cheng-Wei CHENG, Matthew J. BRIGHTSKY
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Patent number: 11289540Abstract: An ovonic threshold switch includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.Type: GrantFiled: March 18, 2021Date of Patent: March 29, 2022Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Patent number: 11271155Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.Type: GrantFiled: March 10, 2020Date of Patent: March 8, 2022Assignees: International Business Machines Corporation, MACRONIX INTERNATIONAL CO., LTD.Inventors: Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Publication number: 20220045128Abstract: A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.Type: ApplicationFiled: August 6, 2020Publication date: February 10, 2022Inventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG
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Patent number: 11158787Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a composition of carbon C, arsenic As, selenium Se and germanium Ge thermally stable to temperatures over 400° C. The switching device is used in 3D crosspoint memory.Type: GrantFiled: December 17, 2019Date of Patent: October 26, 2021Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Publication number: 20210288251Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.Type: ApplicationFiled: March 10, 2020Publication date: September 16, 2021Inventors: Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Publication number: 20210210554Abstract: An ovonic threshold switch includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.Type: ApplicationFiled: March 18, 2021Publication date: July 8, 2021Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG
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Publication number: 20210184112Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a composition of carbon C, arsenic As, selenium Se and germanium Ge thermally stable to temperatures over 400° C. The switching device is used in 3D crosspoint memory.Type: ApplicationFiled: December 17, 2019Publication date: June 17, 2021Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG
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Publication number: 20210111224Abstract: A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.Type: ApplicationFiled: October 15, 2019Publication date: April 15, 2021Inventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG
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Patent number: 10978511Abstract: A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.Type: GrantFiled: October 15, 2019Date of Patent: April 13, 2021Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, I-Ting Kuo, Hsiang-Lan Lung
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Publication number: 20200295083Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes. An in situ barrier layer is disposed between the first and second electrodes. The barrier layer comprises a composition including silicon and carbon. The switching device can be used in memory devices, including 3D cross-point memory.Type: ApplicationFiled: March 15, 2019Publication date: September 17, 2020Applicants: MACRONIX INTERNATIONAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huai-Yu CHENG, I-Ting KUO, Hsiang-Lan LUNG, Robert L. Bruce, Fabio Carta
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Patent number: 10541271Abstract: A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.Type: GrantFiled: October 18, 2017Date of Patent: January 21, 2020Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung, I-Ting Kuo
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Patent number: 10374009Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a tellurium free, low germanium composition of arsenic As, selenium Se and germanium Ge. The switching device is used in 3D cross-point memory.Type: GrantFiled: July 17, 2018Date of Patent: August 6, 2019Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung, I-Ting Kuo
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Publication number: 20190115393Abstract: A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.Type: ApplicationFiled: October 18, 2017Publication date: April 18, 2019Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu CHENG, Hsiang-Lan LUNG, I-Ting KUO
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Patent number: 9554494Abstract: A transparent electromagnetic interference shield includes a first transparent substrate and an electromagnetic interference shielding layer. The electromagnetic interference shielding layer includes a transparent conductive polymer film which is formed on the first transparent substrate, and a plurality of metallic warp and weft lines which are laid on the transparent conductive polymer film. The warp lines and the weft lines cross one another.Type: GrantFiled: November 25, 2014Date of Patent: January 24, 2017Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Nyan-Hwa Tai, I-Ting Kuo
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Publication number: 20150359147Abstract: A transparent electromagnetic interference shield includes a first transparent substrate and an electromagnetic interference shielding layer. The electromagnetic interference shielding layer includes a transparent conductive polymer film which is formed on the first transparent substrate, and a plurality of metallic warp and weft lines which are laid on the transparent conductive polymer film. The warp lines and the weft lines cross one another.Type: ApplicationFiled: November 25, 2014Publication date: December 10, 2015Applicant: National Tsing Hua UniversityInventors: Nyan-Hwa TAI, I-Ting KUO