Abstract: A memory device and an operation method thereof are provided. The operation method includes: in a programming operation, programming a plurality of threshold voltages of a plurality of switches on a plurality of string select lines and a plurality of ground select lines as a first reference threshold voltage, and programming a plurality of threshold voltages of a plurality of dummy memory cells on a plurality of dummy word lines as being gradually increased along a first direction or a second direction, and the threshold voltages of the dummy memory cells being higher than the first reference threshold voltage; wherein the first direction being from the string select lines to a plurality of word lines and the second direction being from the ground select lines to the word lines.

Abstract: A spectrum analyzing method and a gingivitis evaluating device are provided. The spectrum analyzing method includes steps as follows. A diffuse reflection signal of a gingiva is calculated, and a gingiva spectrum is generated. The gingiva spectrum and a plurality of reference gingiva spectra are respectively applied with a time-series similarity calculation, and a plurality of similarity values are generated. The plurality of reference gingiva spectra correspond to various gingival indexes (GI). A minimum similarity value of the plurality of similarity values is obtained. A GI result is output according to the minimum similarity value.

Abstract: An electronic device includes: a first light modulation assembly, including: a first substrate; a second substrate opposite to the first substrate; a first conductive layer disposed on the first substrate; a second conductive layer disposed on the second substrate; a first insulating layer disposed on the first substrate; and a first light modulation layer disposed between the first conductive layer and the second conductive layer.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: An electronic device includes: a first light modulation assembly, including: a first substrate; a second substrate opposite to the first substrate; a first conductive layer disposed on the first substrate; a second conductive layer disposed on the second substrate; a first insulating layer disposed on the first substrate; and a first light modulation layer disposed between the first conductive layer and the second conductive layer.

Abstract: A prismatic sleeve is made of a magnetic material and has a receiving area defined therein. At least two contacting portions are formed on a bottom face of the prismatic sleeve and on opposite sides of the receiving area. The drum core is received in the receiving area and has a coil winding area for winding a coil having two distal ends which are electrically connected to the at least two contacting portions.

Abstract: A square sleeve is made of a magnetic material and has a receiving area defined therein. At least two contacting portions are formed on a bottom face of the square sleeve and on opposite sides of the receiving area. The drum core is received in the receiving area and has a coil winding area for winding a coil having two distal ends which are electrically connected to the at least two contacting portions.