Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

Abstract: A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process includes a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.

Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: A method and system for patterning a dielectric film such as a low dielectric constant (low-k) material. A dry non-plasma etching process can be implemented to transfer a pattern from a photo-lithographic layer to a hard mask layer, while minimizing the evolution of surface roughness in the sidewall of the etched pattern in the hard mask layer. Once a pattern is transferred to the hard mask layer, the photo-lithographic layer can be removed in order to minimize the exposure of the underlying low-k dielectric film to the ashing or wet stripping process that facilitates removal of the photo-lithographic layer. The dry non-plasma removal process comprises a chemical treatment of the exposed hard mask layer, followed by a thermal treatment of the chemically treated exposed layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: An apparatus and method for detecting a leak in a pipe, the apparatus comprising a sensor (11) located at a pipe (7), configured to detect a signal from the pipe, converter means to convert the signal detected by the sensor into a digital signal, and transform means to transform the digital signal into a different orthogonal space. The apparatus also comprises a transmitter (15) for transmitting the transformed digital signal back to a remote processor.

Abstract: An apparatus and method for detecting a leak in a pipe, the apparatus comprising a sensor (11) located at a pipe (7), configured to detect a signal from the pipe, converter means to convert the signal detected by the sensor into a digital signal, and transform means to transform the digital signal into a different orthogonal space. The apparatus also comprises a transmitter (15) for transmitting the transformed digital signal back to a remote processor.

Abstract: A magnet assembly (1) particularly for use in NMR apparatus comprises a first superconducting coil assembly (A,A'-C,C') for generating a first magnetic field; and a second superconducting coil assembly (D-F) for generating a second magnetic field. The second superconducting coil assembly (D-F) is electrically connected in series with the first superconducting coil assembly (A,A'-C,C'). Each coil assembly (A,A'-C,C'; D-F) generates magnetic fields where corresponding components are of substantially the same order of magnitude whereby a resultant, uniform magnetic field is generated in a working volume (3). The second magnetic field opposes the first magnetic field externally of the magnet assembly (1).

Abstract: A magnet system comprises magnetic field generating means such as a superconducting magnet (12) and a shield including a number of sheets (9) of magnetic material, the size (l.sub.z, l.sub.x) and position (r) of the or each sheet (9) relatively to the magnetic field generating means (12) being such that in use at the edge of the sheet or sheets the component of magnetization (M.sub.z) parallel to the sheet in the direction of the magnetic field is less than or substantially equal to zero.

Abstract: A magnet assembly (1) particularly for use in NMR apparatus comprises a first superconducting coil assembly (A,A'-C,C') for generating a first magnetic field; and a second superconducting coil assembly (D-F) for generating a second magnetic field. The second superconducting coil assembly (D-F) is electrically connected in series with the first superconducting coil assembly (A,A'-C,C'). Each coil assembly (A,A'-C,C'; D-F) generates magnetic fields where corresponding components are of substantially the same order of magnitude whereby a resultant, uniform magnetic field is generated in a working volume (3). The second magnetic field opposes the first magnetic field externally of the magnet assembly (1).