Patents by Inventor Ian Latchford
Ian Latchford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10062600Abstract: A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. The carriers are configured for supporting substrates of different sizes. The carriers are also configured for flipping the substrates such that both surfaces of the substrates may be processed.Type: GrantFiled: February 20, 2015Date of Patent: August 28, 2018Assignee: Intevac, Inc.Inventors: Terry Bluck, Vinay Shah, Ian Latchford, Alexandru Riposan
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Patent number: 9525099Abstract: An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask.Type: GrantFiled: April 19, 2013Date of Patent: December 20, 2016Assignee: INTEVAC, INC.Inventors: Terry Bluck, Ian Latchford, Vinay Shah, Alex Riposan
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Publication number: 20150170947Abstract: A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. The carriers are configured for supporting substrates of different sizes. The carriers are also configured for flipping the substrates such that both surfaces of the substrates may be processed.Type: ApplicationFiled: February 20, 2015Publication date: June 18, 2015Inventors: Terry Bluck, Vinay Shah, Ian Latchford, Alexandru Riposan
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Publication number: 20130276978Abstract: An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask.Type: ApplicationFiled: April 19, 2013Publication date: October 24, 2013Applicant: Intevac, Inc.Inventors: Terry Bluck, Ian Latchford, Vinay Shah, Alex Riposan
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Patent number: 7332262Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: GrantFiled: June 16, 2005Date of Patent: February 19, 2008Assignee: Applied Materials, Inc.Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti
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Publication number: 20070128538Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: ApplicationFiled: February 9, 2007Publication date: June 7, 2007Inventors: KEVIN FAIRBAIRN, Michael Rice, Timothy Weidman, Christopher Ngai, Ian Latchford, Christopher Bencher, Yuxiang Wang
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Publication number: 20060102078Abstract: Described is a method for manufacturing wafers and a manufacturing system in which the footprint is substantially contained in a size approximating the processing chambers. Single wafers move horizontally through the system and processing occurs simultaneously in groups of processing chambers. Various manufacturing processes employed in making semiconductor wafers are included as processing chambers in the system.Type: ApplicationFiled: November 18, 2004Publication date: May 18, 2006Inventors: Kevin Fairbairn, Hari Ponnekanti, Christopher Lane, Robert Weiss, Ian Latchford, Terry Bluck
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Patent number: 6967072Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: GrantFiled: August 2, 2001Date of Patent: November 22, 2005Assignee: Applied Materials, Inc.Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti
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Publication number: 20050233257Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: ApplicationFiled: June 16, 2005Publication date: October 20, 2005Inventors: Ian Latchford, Christopher Bencher, Yuxiang Wang, Mario Silvetti
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Publication number: 20050112509Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: ApplicationFiled: December 21, 2004Publication date: May 26, 2005Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher Ngai, Ian Latchford, Christopher Bencher, Yuxiang Wang
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Patent number: 6868856Abstract: Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.Type: GrantFiled: July 13, 2001Date of Patent: March 22, 2005Assignee: Applied Materials, Inc.Inventors: Thomas Nowak, Ian Latchford, Tsutomu Tanaka, Bok Heon Kim, Ping Xu, Jason Foster, Heath B. DeShong, Martin Seamons
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Publication number: 20030010355Abstract: Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.Type: ApplicationFiled: July 13, 2001Publication date: January 16, 2003Applicant: Applied Materials, IncInventors: Thomas Nowak, Ian Latchford, Tsutomu Tanaka, Bok H. Kim, Ping Xu, Jason Foster, Heath B. DeShong, Martin Seamons
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Publication number: 20020001778Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: ApplicationFiled: August 2, 2001Publication date: January 3, 2002Applicant: Applied Materials, Inc.Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti