Abstract: A medical supplies cabinet is disclosed. The cabinet comprises a housing presenting a medical supplies storage zone at where there is provided at least one medical supplies receptacle. The receptacle(s) is/are of a shape and configuration to be able to at least partly receive and hold at least one medical item. A sensor is associated with the receptacle(s). The sensor is configured to generate a signal indicative of the presence and/or absence, or removal of the medical item in/from the receptacle.

Abstract: A health and safety management system for use in worksite or hospitality premises such as a restaurant is disclosed. The system comprises at least one source of health and safety related information of the worksite or hospitality premise and at least one at least one machine learning engine. The machine learning engine is configured to receive said health and safety related information as at least one input data. The machine learning engine is further configured analyse said at least one input data and predict at least one issue relating to health and safety at the worksite or the hospitality premises that requires attention by one or more authorised parties.

Abstract: A medical supplies cabinet is disclosed. The cabinet comprises a housing presenting a medical supplies storage zone at where there is provided at least one medical supplies receptacle. The receptacle(s) is/are of a shape and configuration to be able to at least partly receive and hold at least one medical item. A sensor is associated with the receptacle(s). The sensor is configured to generate a signal indicative of the presence and/or absence, or removal of the medical item in/from the receptacle.

Abstract: A medical supplies cabinet is disclosed. The cabinet comprises a housing presenting a medical supplies storage zone at where there is provided at least one medical supplies receptacle. The receptacle(s) is/are of a shape and configuration to be able to at least partly receive and hold at least one medical item. A sensor is associated with the receptacle(s). The sensor is configured to generate a signal indicative of the presence and/or absence, or removal of the medical item in/from the receptacle.

Abstract: RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

Abstract: A dispenser for items to be withdrawn from packs containing such items within and comprising a dispenser. The dispenser has at least one pairing of a pack insertion zone and an item withdrawal zone whereby a stack of at least two packs can be maintained in the dispenser with the pack at the item withdrawal zone. This allows (a) individual item withdrawal via the item withdrawal zone from the pack and the dispenser and/or (b) empty pack removal via the item withdrawal zone. The empty packs can reconfigure from their form when full of their items to be pulled out of the dispenser.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.

Abstract: A medical supplies cabinet is disclosed. The cabinet comprises a housing presenting a medical supplies storage zone at where there is provided at least one medical supplies receptacle. The receptacle(s) is/are of a shape and configuration to be able to at least partly receive and hold at least one medical item. A sensor is associated with the receptacle(s). The sensor is configured to generate a signal indicative of the presence and/or absence, or removal of the medical item in/from the receptacle.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.

Abstract: An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

Abstract: A rotary gasoline engine has two sets of pistons, which move reciprocally. The reciprocal output of said pistons is coupled to an undulating ramp, which converts the reciprocal motion to rotary motion. The engine casing has a hollow center though which no shaft runs. Dual rotary outputs are provided, one through a rotatable output block at the top end of the casing, the other through a rotatable block at the bottom end of the casing in response to the reciprocal motion of the pistons.