Abstract: The present invention provides a substrate processing apparatus having a drying mechanism for removing water from a surface of a substrate which has been cleaned by a wet cleaning process, and a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an unnecessary thin film deposited on or adhering to a bevel or edge portion of a substrate. The substrate processing apparatus of this invention has a substrate holder for holding a substrate, and a dry gas supply section for turning an atmosphere, to which at least a portion of a surface of the substrate held by the substrate holder is exposed, into a humidity-controlled dry gas atmosphere.

Abstract: A substrate processing apparatus and a substrate processing method is provided for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. A substrate holding apparatus is provided for holding and rotating a substrate. The substrate processing apparatus for processing a substrate while supplying a fluid to the substrate includes a substrate holder for holding and rotating the substrate, and a holder suction unit for sucking the fluid from the substrate holder. The substrate holding apparatus includes a plurality of rollers which are brought into contact with an edge portion of a substrate so as to hold and rotate the substrate, and at least one moving mechanism for moving the rollers.

Abstract: An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Abstract: A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member. The holding members revolve around the axis of rotation when the rotatable member rotates and are allowed to swing about their own central axes.

Abstract: The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).

Abstract: The present invention relates to a cleaning apparatus which can reduce a potential difference between metals or alloys used to form interconnects on a substrate for thereby minimizing corrosion which may occur during and after a substrate cleaning process. The cleaning apparatus for cleaning a substrate having metal interconnects comprises a cleaning mechanism for cleaning the substrate, and a functional water supply mechanism for supplying functional water to the cleaning mechanism. The cleaning mechanism cleans a surface of the substrate with use of the functional water.

Abstract: A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Abstract: A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.

Abstract: The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).

Abstract: A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of roation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.

Abstract: A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.

Abstract: The present invention provides a substrate processing apparatus having a drying mechanism for removing water from the surface of a substrate which has been cleaned by a wet cleaning process, and a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an unnecessary thin film deposited on or adhering to a bevel or edge portion of a substrate. The substrate processing apparatus of this invention has a substrate holder for holding a substrate, and a dry gas supply section for turning an atmosphere to which at least a portion of a surface of the substrate held by the substrate holder is exposed into a humidity-controlled dry gas atmosphere.

Abstract: There are provided an electroless plating apparatus and a post-electroless plating cleaning method which can remove Co or Ni particles, produced upon electroless plating onto Cu interconnects of an electronic circuit substrate and remaining on a silicon oxide film as an interlevel dielectric, without exerting an adverse influence on the Cu interconnects. The electroless plating apparatus for carrying out electroless plating of the surface of interconnects formed in a surface of an electronic circuit substrate having fine circuit patterns of conductive metal interconnects, includes: a substrate transfer device (62, 76, 86); a loading station (58) disposed in association with the substrate transfer device; at least one electroless plating cell (82) disposed in association with the substrate transfer device; and a scrub cleaning device (66a) and/or a solution cleaning device (66c) disposed in association with the substrate transfer device.

Abstract: The present invention provides a substrate processing method which enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing method comprises flattening a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Abstract: An object of the present invention to provide an apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. An apparatus for processing a substrate of the present invention, including a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Abstract: The present invention relates to a cleaning apparatus which can reduce a potential difference between metals or alloys used to form interconnects on a substrate for thereby minimizing corrosion which may occur during and after a substrate cleaning process. The cleaning apparatus for cleaning a substrate having metal interconnects comprises a cleaning mechanism for cleaning the substrate, and a functional water supply mechanism for supplying functional water to the cleaning mechanism. The cleaning mechanism cleans a surface of the substrate with use of the functional water.

Abstract: There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially a no-device-formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 and an oxidation-reduction potential of not less than 300 mVvsSHE.

Abstract: An apparatus continuously supplies an acid solution to a central portion of a surface of a substrate while the substrate is rotating, and also supplies an oxidizing agent solution continuously or intermittently to a periphery of the substrate. In addition, the apparatus supplies an oxidizing agent solution and an acid solution either simultaneously or alternately to a reverse side of the substrate.

Abstract: An apparatus continuously supplies an acid solution to a central portion of a surface of a substrate while the substrate is rotating, and also supplies an oxidizing agent solution continuously or intermittently to a periphery of the substrate. In addition, the apparatus supplies an oxidizing agent solution and an acid solution either simultaneously or alternately to a reverse side of the substrate.

Abstract: There is provided a substrate processing apparatus and method which can uniformly increase the rate of processing of a substrate, e.g. etching or plating that takes place in the surface of a substrate, and which, when carrying out plating processing of a substrate, can form a plated film having a uniform film thickness easily and quickly. The substrate processing apparatus includes: a substrate holder 10 for holding and rotating a substrate W; and a heated fluid supply section 24 for bringing a heated fluid at a controlled temperature into contact with the substrate W, which is held and rotated by the substrate holder 10, so as to control the temperature of the substrate W.