Abstract: A grinding apparatus includes a first grinding mechanism, a second grinding mechanism, and a third grinding mechanism for grinding wafers held on respective chuck tables. The first grinding mechanism and the second grinding mechanism are positioned with respect to the chuck tables such that a second ground mark produced on a wafer by second grindstones of the second grinding mechanism as it grinds the wafer extends across a first ground mark produced on the wafer by first grindstones of the first grinding mechanism as it grinds the wafer. The second grinding mechanism and the third grinding mechanism are positioned with respect to the chuck tables such that a third ground mark produced on the wafer by third grindstones of the third grinding mechanism as it grinds the wafer extends across the second ground mark produced on the wafer by the second grindstones.

Abstract: A workpiece processing apparatus which coats a front surface of a workpiece with a resin, the workpiece having devices formed in regions demarcated by a plurality of planned dividing lines formed in a lattice pattern. The workpiece processing apparatus includes a cassette mounting base mounted with a cassette housing a plurality of workpieces, a resin coating unit that coats the front surface of the workpiece with the resin, a resin curing unit that cures the resin by applying an external stimulus to the coated resin, a resin grinding unit that flattens the cured resin by grinding the cured resin by a rotating grinding stone, and a conveying mechanism that conveys the workpiece between the units.

Abstract: There is provided an inclination adjusting mechanism including an annular upper plate that has an upper surface for connecting a table and a lower surface inclined relative to the upper surface, an annular lower plate that has an upper surface parallel to the lower surface of the upper plate and a lower surface parallel to the upper surface of the upper plate and facing an upper surface of a base, an upper rotating mechanism that rotates the upper plate, a lower rotating mechanism that rotates the lower plate, a first bearing provided between the lower surface of the upper plate and the upper surface of the lower plate, a second bearing provided between the lower surface of the lower plate and the upper surface of the base, and a connecting mechanism that connects the upper plate, the lower plate, and the base.

Abstract: A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

Abstract: A grinding apparatus includes a first grinding mechanism, a second grinding mechanism, and a third grinding mechanism for grinding wafers held on respective chuck tables. The first grinding mechanism and the second grinding mechanism are positioned with respect to the chuck tables such that a second ground mark produced on a wafer by second grindstones of the second grinding mechanism as it grinds the wafer extends across a first ground mark produced on the wafer by first grindstones of the first grinding mechanism as it grinds the wafer. The second grinding mechanism and the third grinding mechanism are positioned with respect to the chuck tables such that a third ground mark produced on the wafer by third grindstones of the third grinding mechanism as it grinds the wafer extends across the second ground mark produced on the wafer by the second grindstones.

Abstract: There is provided an inclination adjusting mechanism including an annular upper plate that has an upper surface for connecting a table and a lower surface inclined relative to the upper surface, an annular lower plate that has an upper surface parallel to the lower surface of the upper plate and a lower surface parallel to the upper surface of the upper plate and facing an upper surface of a base, an upper rotating mechanism that rotates the upper plate, a lower rotating mechanism that rotates the lower plate, a first bearing provided between the lower surface of the upper plate and the upper surface of the lower plate, a second bearing provided between the lower surface of the lower plate and the upper surface of the base, and a connecting mechanism that connects the upper plate, the lower plate, and the base.

Abstract: There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.

Abstract: There is provided a wafer processing method for reducing a thickness of a wafer. The wafer has a front side and a back side opposite to the front side. The wafer has a device area where a plurality of devices are formed on the front side and a peripheral marginal area including a curved peripheral edge. A protective layer for covering the plural devices are formed on the front side in the device area. The wafer processing method includes a plasma etching step of supplying an etching gas in a plasma condition to the front side of the wafer by using the protective layer as a mask, thereby removing the peripheral marginal area including the curved peripheral edge, a protective member attaching step of attaching a protective member to the front side of the wafer, and a grinding step of grinding the back side of the wafer.

Abstract: A workpiece processing method includes a resin coating step of coating a resin on a front surface of a workpiece, a resin curing step of applying an ultraviolet ray to the coated resin to be cured, a resin grinding step of grinding the cured resin with grinding stones to be flattened, and a workpiece grinding step of holding the flattened resin side of the workpiece on a chuck table and grinding the back surface of the workpiece with grinding stones. In the resin grinding step, grinding is performed while cleaning the resin stuck to the grinding stones. Accordingly, it is possible to grind the resin coated on the front surface of the workpiece and the back surface of the workpiece in the same apparatus.

Abstract: A workpiece processing apparatus which coats a front surface of a workpiece with a resin, the workpiece having devices formed in regions demarcated by a plurality of planned dividing lines formed in a lattice manner. The workpiece processing apparatus includes a cassette mounting base mounted with a cassette housing a plurality of workpieces, a resin coating unit that coats the front surface of the workpiece with the resin, a resin curing unit that cures the resin by applying an external stimulus to the coated resin, a resin grinding unit that flattens the cured resin by grinding the cured resin by a rotating grinding stone, and a conveying mechanism that conveys the workpiece between the units.

Abstract: A wafer processing machine comprising a turntable, a plurality of chuck tables mounted on the turntable, a grinding means for grinding a wafer held on the chuck table, and a multipurpose polishing means for polishing the ground surface of a wafer held on a chuck table, wherein the multipurpose polishing means comprises a mounter for detachably mounting a polishing tool, a spindle unit for rotating the mounter, a spindle unit support means for supporting the spindle unit in such a manner that the spindle unit can move in a direction perpendicular to the holding surfaces of the chuck tables and in a direction parallel to the holding surfaces of the chuck tables, a first polishing-feed means for moving the spindle unit in a direction perpendicular to the holding surfaces of the chuck tables, and a second polishing-feed means for moving the spindle unit in a direction parallel to the holding surfaces of the chuck tables.

Abstract: A wafer processing machine comprising a turntable, a plurality of chuck tables mounted on the turntable, a grinding means for grinding a wafer held on the chuck table, and a multipurpose polishing means for polishing the ground surface of a wafer held on a chuck table, wherein the multipurpose polishing means comprises a mounter for detachably mounting a polishing tool, a spindle unit for rotating the mounter, a spindle unit support means for supporting the spindle unit in such a manner that the spindle unit can move in a direction perpendicular to the holding surfaces of the chuck tables and in a direction parallel to the holding surfaces of the chuck tables, a first polishing-feed means for moving the spindle unit in a direction perpendicular to the holding surfaces of the chuck tables, and a second polishing-feed means for moving the spindle unit in a direction parallel to the holding surfaces of the chuck tables.