Abstract: An anodized layer formation method includes: (a) providing an aluminum base or an aluminum film deposited on a support; anodization step (b) in which a forming voltage is increased to a predetermined first voltage level under a predetermined condition with a surface of the aluminum base or a surface of the aluminum film being kept in contact with an electrolytic solution, and thereafter, the forming voltage is maintained at the first voltage level for a predetermined period of time, whereby a porous alumina layer which has a minute recessed portion is formed; and etching step (c) in which, after step (b), the porous alumina layer is brought into contact with an etching solution, whereby the minute recessed portion is enlarged and a lateral surface of the minute recessed portion is sloped.

Abstract: An anodized layer formation method includes: (a) providing an aluminum base or an aluminum film deposited on a support; anodization step (b) in which a forming voltage is increased to a predetermined first voltage level under a predetermined condition with a surface of the aluminum base or a surface of the aluminum film being kept in contact with an electrolytic solution, and thereafter, the forming voltage is maintained at the first voltage level for a predetermined period of time, whereby a porous alumina layer which has a minute recessed portion is formed; and etching step (c) in which, after step (b), the porous alumina layer is brought into contact with an etching solution, whereby the minute recessed portion is enlarged and a lateral surface of the minute recessed portion is sloped.

Abstract: A mold manufacturing method includes providing an aluminum base or an aluminum film; allowing passage of an electric current between a surface of the aluminum base and a counter electrode in an aqueous solution with the surface being a cathode, thereby forming a plurality of first recessed portions whose two-dimensional size viewed in a direction normal to the surface is not less than 200 nm and not more than 100 ?m; thereafter, the step of anodizing the surface, thereby forming a porous alumina layer which has a plurality of second recessed portions whose two-dimensional size is not less than 10 nm and less than 500 nm over an inner surface of the plurality of first recessed portions and between the plurality of first recessed portions; and thereafter, bringing the porous alumina layer into contact with an etchant, thereby enlarging the plurality of second recessed portions of the porous alumina layer.

Abstract: An anodized layer formation method of at least one example embodiment of the present invention includes the steps of: (a) providing an aluminum base which has a machined surface; (b) forming, in the surface of the aluminum base, a minute uneven structure which has a smaller average neighboring distance than an average neighboring distance of a plurality of minute recessed portions that an intended porous alumina layer has; and (c) after step (b), anodizing the surface of the aluminum base, thereby forming a porous alumina layer which has the plurality of minute recessed portions. According to at least one embodiment the present invention, a porous alumina layer which has uniformly-distributed minute recessed portions can be formed over a machined surface of an aluminum base.

Abstract: A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.

Abstract: A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.

Abstract: A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.

Abstract: A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.