Abstract: A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of a semiconductor substrate, for generating charges by photoelectric conversion; a transfer region formed in the upper part of the semiconductor substrate and located on a side of the photoelectric conversion region, for transferring the charges; and a transfer electrode formed over the semiconductor substrate and located above the transfer region. The solid-state image sensor further includes: a first insulating film which covers the photoelectric conversion region and the transfer electrode; an antireflection film which covers the first insulating film; and a first light-shielding film which is formed on the antireflection film and covers at least the transfer electrode. The antireflection film and the first light-shielding film have an opening above the transfer electrode.

Abstract: A signal processing method of a solid-state image sensor includes comparing a high-sensitivity-pixel output signal and a first threshold value to determine whether or not the high-sensitivity-pixel output signal reaches a level of a saturated-high-sensitivity-pixel output signal. If the high-sensitivity-pixel output signal does not reach the level of the saturated-high-sensitivity-pixel output signal, a difference value between the high-sensitivity-pixel output signal and an amplified low-sensitivity-pixel output signal is calculated. The amplified low-sensitivity-pixel output signal is obtained by multiplying a low-sensitivity-pixel output signal by a sensitivity ratio, which is obtained by dividing a sensitivity value of a high sensitivity pixel by a sensitivity value of a low sensitivity pixel. A first or second image signal is output according to whether an absolute value of the difference value is smaller than a second threshold value or not.

Abstract: A solid-state image sensor includes first and second pixels formed on a semiconductor substrate. The first pixel includes: a first photoelectric conversion region located in an upper portion of the semiconductor substrate; a first transfer electrode; a light-shield film covering the first transfer electrode and having a first opening on the first photoelectric conversion region; and a first anti-reflection film located on the first photoelectric conversion region and, when viewed in plan, within the first opening so as not to overlap the first light-shield film. The second pixel includes: a second photoelectric conversion region located in an upper portion of the semiconductor substrate; a second transfer electrode; the light-shield film covering the second transfer electrode and having a second opening on the second photoelectric conversion region; and a second anti-reflection film located on the second photoelectric conversion region and continuously extending to a portion on the second transfer electrode.

Abstract: A signal processing method of a solid-state image sensor includes comparing a high-sensitivity-pixel output signal and a first threshold value to determine whether or not the high-sensitivity-pixel output signal reaches a level of a saturated-high-sensitivity-pixel output signal. If the high-sensitivity-pixel output signal does not reach the level of the saturated-high-sensitivity-pixel output signal, a difference value between the high-sensitivity-pixel output signal and an amplified low-sensitivity-pixel output signal is calculated. The amplified low-sensitivity-pixel output signal is obtained by multiplying a low-sensitivity-pixel output signal by a sensitivity ratio, which is obtained by dividing a sensitivity value of a high sensitivity pixel by a sensitivity value of a low sensitivity pixel. A first or second image signal is output according to whether an absolute value of the difference value is smaller than a second threshold value or not.

Abstract: A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of a semiconductor substrate, for generating charges by photoelectric conversion; a transfer region formed in the upper part of the semiconductor substrate and located on a side of the photoelectric conversion region, for transferring the charges; and a transfer electrode formed over the semiconductor substrate and located above the transfer region. The solid-state image sensor further includes: a first insulating film which covers the photoelectric conversion region and the transfer electrode; an antireflection film which covers the first insulating film; and a first light-shielding film which is formed on the antireflection film and covers at least the transfer electrode. The antireflection film and the first light-shielding film have an opening above the transfer electrode.

Abstract: A solid state image pickup device includes a plurality of light receiving sections formed in a regular pattern, transfer channels, a plurality of first transfer electrodes and a plurality of second transfer electrodes formed on the transfer channels, a plurality of first wires each applying a potential to the corresponding first transfer electrodes and a plurality of second wires each applying a potential to the corresponding second transfer electrodes. The first and second wires extend in the directions intersecting each other.