Abstract: An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 ?m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 ?m when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 &mgr;m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of said phosphorous copper anode 5 to 1500 &mgr;m when the anode current density during electrolysis is less than 3 A/dm2. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.

Abstract: A method for producing Ti alloy plates, comprising heating an .alpha.+.beta. Ti alloy ingot to a temperature within the .alpha.+.beta. two phase range, forging or rolling said heated alloy ingot to reduce it more than 30% whereby strain energy accumulates in said ingot as it is being reduced, and reheating said reduced ingot containing said accumulated strain energy to a temperature of the .alpha.+.beta. phase range and then hot rolling said reheated reduced ingot so that it is further reduced in an amount more than an additional 30% whereby said accumulated strain energy accelerates recrystallization during said hot rolling to produce a uniform alloy structure, said heating and reheating being carried out in an atmosphere having not more than 0.02 atm oxygen partial pressure.