Abstract: An ion recovery device including an ion selective permeable membrane with an ion conductive layer containing a lithium ion conductor formed of an inorganic substance, and a support layer is formed of a porous body wherein the ion selective permeable membrane has a configuration (I). In configuration (I) the ion conductive layer is provided in contact with one principal surface side of a support layer, and an electrode is provided in contact with another principal surface side opposite to the one principal surface side on which the ion conductive layer is provided.

Abstract: Techniques may relate to an electrode having high production efficiency of a synthetic gas containing at least CO. Such techniques relating to an electrode may include: a catalyst that produces at least carbon monoxide by a reduction reaction; an electrode material including the catalyst; and a solid base additive provided at least on the electrode material.

Abstract: A technique may produce a composite at a low temperature by a reducing agent that is easy to handle. A technique may produce a composite in which a metal simple substance or a metal oxide derived from reduced cations, or both of them are supported on a carrier. The technique may include at least: preparing a liquid phase mixture containing at least an alcohol compound as a first reducing agent, a phosphinic acid or a salt thereof as a second reducing agent, the carrier, and a source compound of one or more cations selected including Au, Ag, Cu, Pt, Rh, Ru, Re, Pd, and/or Ir; and reducing the cations in the liquid phase mixture.

Abstract: An object of the present invention is to realize exertion of p-type conduction without incurring deterioration of crystal in the light-emitting layer or generating contamination, production at a low cost and good ohmic contact with an electrode. The method for producing a p-type gallium nitride-based compound semiconductor of the present invention includes producing a gallium nitride-based compound semiconductor layer doped with a p-type impurity, producing a catalyst layer having a metal, alloy or compound on the gallium nitride-based compound semiconductor layer, and annealing the gallium nitride-based compound semiconductor layer fixed with the catalyst layer.

Abstract: Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11.