Abstract: An optoelectronic device includes a substrate and at least three emitters, which are disposed on the substrate and are configured to emit respective beams of light. A plurality of waveguides are disposed on the substrate and have respective input ends coupled to receive the beams of light from respective ones of the emitters, and curve adiabatically from the input ends to respective output ends of the waveguides, which are arranged on the substrate in an array having a predefined pitch. Control circuitry is configured to apply a temporal modulation independently to each of the beams of light.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: An optoelectronic device includes a silicon substrate, with a silicon waveguide layer disposed over the silicon substrate and including an optical waveguide. One or more through-silicon vias (TSVs) extend through the silicon substrate and contact the silicon waveguide layer. A III-V base layer is disposed over the silicon waveguide layer, and an optical amplifier is disposed on the III-V base layer and optically coupled to the optical waveguide.

Abstract: A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

Abstract: An optoelectronic device includes a substrate and at least three emitters, which are disposed on the substrate and are configured to emit respective beams of light. A plurality of waveguides are disposed on the substrate and have respective input ends coupled to receive the beams of light from respective ones of the emitters, and curve adiabatically from the input ends to respective output ends of the waveguides, which are arranged on the substrate in an array having a predefined pitch. Control circuitry is configured to apply a temporal modulation independently to each of the beams of light.

Abstract: An optoelectronic device includes a substrate, having a recess formed therein. An optical isolator is mounted in the recess. A laser includes a stack of epitaxial layers on the substrate and emits a beam of radiation toward the recess along a direction parallel to a surface of the substrate. A waveguide directs the beam emitted by the laser into the optical isolator.

Abstract: A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: An optoelectronic device includes a substrate, having a recess formed therein. An optical isolator is mounted in the recess. A laser includes a stack of epitaxial layers on the substrate and emits a beam of radiation toward the recess along a direction parallel to a surface of the substrate. A waveguide directs the beam emitted by the laser into the optical isolator.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: Embodiments herein describe a photonic device that includes a germanium photodetector coupled to multiple silicon waveguides. In one embodiment, the silicon waveguides optically couple to a layer of germanium material. In one embodiment, if the germanium material forms a polygon, then a respective silicon waveguide optically couple to each of the corners of the polygon. Each of the plurality of input silicon waveguides may be arranged to transmit light in a direction under the germanium that is offset relative to both sides of the germanium forming the respective corner. In another example, the germanium material may be a circle or ellipse in which case the silicon waveguides terminate at or close to a non-straight, curved surface of the germanium material. As described below, optically coupling the silicon waveguides at a non-straight surface can reduce the distance charge carriers have to travel in the optical detector which can improve bandwidth.