Abstract: A transparent device for use in optical applications, and methods for using and manufacturing the device are disclosed. The device generally requires several layers, including (i) a first layer comprising a transparent conductive oxide (such as indium tin oxide (ITO)), (ii) a second layer comprising a transparent semiconductor (e.g., a pn-heterojunction or a pn-homojunction), the second layer having a surface facing the first layer, (iii) a third layer comprising a liquid crystal (such as E7), the third layer having a surface facing the second layer, and (iv) a fourth layer comprising either a second transparent conductive oxide or a second transparent semiconductor, the fourth layer having a surface facing the third layer. When light illuminates a surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.

Abstract: A transparent device for use in optical applications, and methods for using and manufacturing the device are disclosed. The device generally requires several layers, including (i) a first layer comprising a transparent conductive oxide (such as indium tin oxide (ITO)), (ii) a second layer comprising a transparent semiconductor (e.g., a pn-heterojunction or a pn-homojunction), the second layer having a surface facing the first layer, (iii) a third layer comprising a liquid crystal (such as E7), the third layer having a surface facing the second layer, and (iv) a fourth layer comprising either a second transparent conductive oxide or a second transparent semiconductor, the fourth layer having a surface facing the third layer. When light illuminates a surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.

Abstract: A transparent device for use in optical applications, and methods for using and manufacturing the device are disclosed. The device generally requires several layers, including (i) a first layer comprising a transparent conductive oxide (such as indium tin oxide (ITO)), (ii) a second layer comprising a transparent semiconductor (e.g., a pn-heterojunction or a pn-homojunction), the second layer having a surface facing the first layer, (iii) a third layer comprising a liquid crystal (such as E7), the third layer having a surface facing the second layer, and (iv) a fourth layer comprising either a second transparent conductive oxide or a second transparent semiconductor, the fourth layer having a surface facing the third layer. When light illuminates a surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.

Abstract: A transparent device for use in optical applications, and methods for using and manufacturing the device are disclosed. The device generally requires several layers, including (i) a first layer comprising a transparent conductive oxide (such as indium tin oxide (ITO)), (ii) a second layer comprising a transparent semiconductor (e.g., a pn-heterojunction or a pn-homojunction), the second layer having a surface facing the first layer, (iii) a third layer comprising a liquid crystal (such as E7), the third layer having a surface facing the second layer, and (iv) a fourth layer comprising either a second transparent conductive oxide or a second transparent semiconductor, the fourth layer having a surface facing the third layer. When light illuminates a surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.

Abstract: A spectrally-selective reflective optical film comprises at least two anisotropic layers, each of the layers having a phase retardation value and an optical axis orientation pattern within the layer; the optical axis orientation patterns exhibiting a discontinuity at the boundary of the at least two layers; and at least one substrate holding the film. At least a part of the anisotropic layers may be chiral. The materials comprising the anisotropic layers may be selected from liquid crystal polymers, azobenzene liquid crystal polymers, liquid crystals, azobenzene liquid crystals, polymer films with stressed birefringence, and combinations thereof. The materials comprising the anisotropic layers may be doped with at least one dopant from the list comprising nanorods, photorefractive nanoparticles, photovoltaic nanoparticles, lasing dyes, and combinations of thereof. The anisotropic layers may be transparent to infrared wavelengths.

Abstract: A method for synthesizing ferroelectric nanoparticles comprises introducing solutions of Ba(NO3)2 (1 mmol) in 5 ml of deionized water, NaOH (12.5 mmol) in 5 ml of deionized water, Ti(IV) n-butoxide (1 mmol) in 5 ml of 1-butanol, 2.5 ml of oleic acid, and 5 ml of 1-butanol into a Teflon-lined autoclave vessel; heating the vessel to 135° C. for 18 h, resulting in barium titanate nanoparticles; and ball-milling the barium titanate nanoparticles in a solution of oleic acid and heptane to create a colloidal suspension of nanoparticles. The weight ratio of barium titanate:oleic acid:heptane is 1:1:20. The ball-milling step may further comprise introducing a slurry comprising 0.1 g of synthesized BaTiO3 nanocubes, 0.1 g of oleic acid, and 15 mL of heptane into a ball-mill crucible filled with 2 mm ZrO2 balls; subjecting the slurry to rotation at 500 rpm for 5 hours; converting the resulting nanoparticle suspension to a powder using anhydrous ethanol with sequential washing/drying at ambient temperature.