Patents by Inventor Igor Constantin Ivanov
Igor Constantin Ivanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240076730Abstract: The present disclosure provides a method and systems for processing or analyzing a nucleic acid molecule. A method for processing or analyzing a double-stranded nucleic molecule may comprise providing the double-stranded nucleic acid molecule and a double-stranded adapter. The double-stranded adapter may comprise a nicking site within a sense strand or an anti-sense strand of the double-stranded adapter. The double-stranded adapter may then be coupled to the double-stranded nucleic acid molecule, and the double-stranded nucleic acid molecule coupled to the double-stranded adapter may be circularized to generate a circularized double-stranded nucleic acid molecule.Type: ApplicationFiled: February 3, 2023Publication date: March 7, 2024Inventors: Suhua DENG, Vladimir Ivanovich BASHKIROV, Hui TIAN, Igor Constantin IVANOV
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Patent number: 11603562Abstract: The present disclosure provides a method and systems for processing or analyzing a nucleic acid molecule. A method for processing or analyzing a double-stranded nucleic molecule may comprise providing the double-stranded nucleic acid molecule and a double-stranded adapter. The double-stranded adapter may comprise a nicking site within a sense strand or an anti-sense strand of the double-stranded adapter. The double-stranded adapter may then be coupled to the double-stranded nucleic acid molecule, and the double-stranded nucleic acid molecule coupled to the double-stranded adapter may be circularized to generate a circularized double-stranded nucleic acid molecule.Type: GrantFiled: November 20, 2020Date of Patent: March 14, 2023Assignee: Axbio Inc.Inventors: Suhua Deng, Vladimir Ivanovich Bashkirov, Hui Tian, Igor Constantin Ivanov
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Publication number: 20220396831Abstract: The present disclosure provides systems and methods for analyzing or identifying a target molecule. For example, a system of the present disclosure may comprise (i) a sensing electrode, (ii) a binding unit coupled to the sensing electrode and configured to bind at least a portion of the target molecule, and (iii) a dielectric material coupled to the sensing electrode and covering at least a portion of a surface of the sensing electrode. The sensor may be configured to detect one or more signals indicative of an impedance or impedance change in the sensor when the at least the portion of the target molecule is bound by the binding unit. The one or more signals may be usable to analyze or identify the target molecule.Type: ApplicationFiled: January 28, 2022Publication date: December 15, 2022Inventors: Igor Constantin IVANOV, Hui TIAN
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Publication number: 20210139971Abstract: The present disclosure provides a method and systems for processing or analyzing a nucleic acid molecule. A method for processing or analyzing a double-stranded nucleic molecule may comprise providing the double-stranded nucleic acid molecule and a double-stranded adapter. The double-stranded adapter may comprise a nicking site within a sense strand or an anti-sense strand of the double-stranded adapter. The double-stranded adapter may then be coupled to the double-stranded nucleic acid molecule, and the double-stranded nucleic acid molecule coupled to the double-stranded adapter may be circularized to generate a circularized double-stranded nucleic acid molecule.Type: ApplicationFiled: November 20, 2020Publication date: May 13, 2021Inventors: Suhua DENG, Vladimir Ivanovich BASHKIROV, Hui TIAN, Igor Constantin IVANOV
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Patent number: 10707247Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.Type: GrantFiled: October 9, 2017Date of Patent: July 7, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 10535699Abstract: An image sensor device includes a semiconductor substrate, including an array of pixel circuits, which define respective pixels of the device. A photosensitive layer is formed over the semiconductor substrate and configured to transfer charge to the pixel circuits in response to light incident on the photosensitive layer. An upper layer is formed over the photosensitive layer and is at least partially transparent to the light. Opaque partitions extend vertically through the upper layer in a checkerboard pattern aligned with the pixels in the array.Type: GrantFiled: March 29, 2018Date of Patent: January 14, 2020Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 10516072Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: June 14, 2018Date of Patent: December 24, 2019Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 10506147Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.Type: GrantFiled: June 13, 2016Date of Patent: December 10, 2019Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Publication number: 20180315881Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: ApplicationFiled: June 14, 2018Publication date: November 1, 2018Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Publication number: 20180219043Abstract: An image sensor device includes a semiconductor substrate, including an array of pixel circuits, which define respective pixels of the device. A photosensitive layer is formed over the semiconductor substrate and configured to transfer charge to the pixel circuits in response to light incident on the photosensitive layer. An upper layer is formed over the photosensitive layer and is at least partially transparent to the light. Opaque partitions extend vertically through the upper layer in a checkerboard pattern aligned with the pixels in the array.Type: ApplicationFiled: March 29, 2018Publication date: August 2, 2018Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9972653Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: May 25, 2017Date of Patent: May 15, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9972652Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: November 7, 2016Date of Patent: May 15, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
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Publication number: 20180130838Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.Type: ApplicationFiled: October 9, 2017Publication date: May 10, 2018Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9825074Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.Type: GrantFiled: June 9, 2015Date of Patent: November 21, 2017Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Publication number: 20170301808Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: ApplicationFiled: June 26, 2017Publication date: October 19, 2017Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Publication number: 20170263668Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: ApplicationFiled: May 25, 2017Publication date: September 14, 2017Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9691931Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: December 7, 2015Date of Patent: June 27, 2017Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 9666634Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: March 10, 2016Date of Patent: May 30, 2017Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Publication number: 20170069679Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: November 7, 2016Publication date: March 9, 2017Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
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Patent number: 9491388Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: December 22, 2014Date of Patent: November 8, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee