Patents by Inventor Igor Ivanovich Kruglov

Igor Ivanovich Kruglov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor indicating device and method for production of same
    Patent number: 3999206
    Abstract: A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 .mu.m, the concentration of neutral atoms in the n-region is from 1.5.times.10.sup.18 to 5.times.10.sup.18 cm.sup.-.sup.3 and the thickness of the compensated region disposed between said two regions containing a luminescence activator, has a thickness of 0.5-1.2 .mu.m.A method for production of a semiconductor digital display device whereby the p-n junction is formed by introducing an impurity which has a high surface concentration and a low diffusion coefficient in silicon carbide and then a luminescence activator is introduced from the same side to a depth exceeding by 3-4 times the diffusion depth.The device features a high resistance of the diffused region adjoining the luminescence contacts.
    Type: Grant
    Filed: December 29, 1975
    Date of Patent: December 21, 1976
    Inventors: Vladimir Alexandrovich Babenko, Galina Georgievna Boeva, Eduard Efimovich Violin, Jury Alexandrovich Vodakov, Eleonora Grigorievna Ivanova, Tatyana Georgievna Kmita, Vadim Ivanovich Pavlichenko, Igor Veniaminovich Ryzhikov, Georgy Fedorovich Kholuyanov, Igor Ivanovich Kruglov, Galina Alexandrovna Lomakina, Vladimir Pavlovich Novikov
  • Semiconductor SiCl light source and a method of manufacturing same
    Patent number: 3986193
    Abstract: A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concentration in said silicon carbide is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3, the p-layer is doped with an acceptor impurity with a minimum activation energy and with a solubility in silicon carbide of about 10.sup.19 to 10.sup.20 cm.sup..sup.-3, the uncompensated donor concentration in the base layer is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3 and a central layer, 0.05 to 1 micron thick, located between the p-layer and the base layer is doped with luminescence activators of donor and acceptor types to a concentration of 0.1 .times. 10.sup.18 to 2 .times. 10.sup.18 cm.sup..sup.-3 and has a resistivity greater than the resistivity of the base layer by at least three orders of magnitude.
    Type: Grant
    Filed: June 13, 1975
    Date of Patent: October 12, 1976
    Inventors: Jury Alexandrovich Vodakov, Galina Alexandrovna Lomakina, Evgeny Nikolaevich Mokhov, Igor Ivanovich Kruglov, Igor Veniaminovich Ryzhikov, Vadim Ivanovich Pavlichenko, Tatyana Georgievna Kmita, Georgy Fedorovich Kholuyanov, Eduard Efimovich Violin, Jury Petrovich Maslakovets, deceased, by Irina Vladimirovna Valter-Maslakovets, administratrix
  • Semiconductor indicating instrument
    Patent number: 3982262
    Abstract: A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 10.sup.19 cm.sup.-.sup.3 to 10.sup.22 cm.sup.-.sup.3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 mu.
    Type: Grant
    Filed: April 17, 1974
    Date of Patent: September 21, 1976
    Inventors: Anatoly Prokofievich Karatsjuba, Tatyana Georgievna Kmita, Igor Ivanovich Kruglov, Vladimir Ivanovich Kurinny, Anatoly Ivanovich Kurnosov, Igor Veniaminovich Ryzhikov, Vladimir Vasilievich Judin
  • Semiconductor diode with voltage-dependent capacitance
    Patent number: 3935585
    Abstract: A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.
    Type: Grant
    Filed: February 22, 1974
    Date of Patent: January 27, 1976
    Inventors: Stanislav Konstantinovich Korovin, Igor Ivanovich Kruglov, Konstantin Andreevich Preobrazhentsev, Jury Ivanovich Sidorov, Stanislav Vladislavovich Fronk