Abstract: A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

Abstract: A method for driving a photo-sensor to produce an improved, stable output which exactly represents the incident light is disclosed. The photo-sensor has a pair of main electrodes found on a semiconductor layer with a photo-sensing area arranged therebetween. A semiconductor layer and an auxiliary electrode are formed on at least the photo-sensing area with an insulating area being interleaved therein. The auxiliary electrode is used for stabilizing the photosensing output and providing a signal proportional to the incident light. The method of driving such a photo-sensor includes applying a bias voltage to the auxiliary electrode in accordance with the carriers carrying a current of the semiconductor layer. A voltage of the same polarity as that of the bias voltage, but smaller in absolute value, is applied to the auxiliary electrode for a predetermine period of time in a non-read period of the photo-sensor to cause a next photo-sensor output to be read while a previous photo-sensor has been erased.

Abstract: A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.