Patents by Inventor Ikerionwu A. Akwani

Ikerionwu A. Akwani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Using deuterated source gases to fabricate low loss GeSiON and SiON waveguides
    Patent number: 6996320
    Abstract: The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: February 7, 2006
    Assignee: Corning Incorporated
    Inventors: Robert Bellman, Ikerionwu A. Akwani, Paul A. Sachenik, Thomas P. Grandi
  • Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
    Publication number: 20060003484
    Abstract: The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
    Type: Application
    Filed: August 9, 2005
    Publication date: January 5, 2006
    Inventors: Robert Bellman, Ikerionwu Akwani, Paul Sachenik, Thomas Grandi
  • High germanium content waveguide materials
    Patent number: 6768856
    Abstract: Germanium-silicon oxide, germanium-silicon oxynitride and silica-germania-titania materials and oxynitride materials suitable for fabricating optical waveguides for liquid crystal based cross-connect optical switching devices have a refractive index of from about 1.48 to about 1.52 at 1550 nm, and a coefficient of thermal expansion at room temperature of from about 3×10−6° C.−1 to about 4.4×10−6° C.−1. The compositions are adjusted so that the refractive index of the germanium-silicon oxide, germanium-silicon oxynitride or silica-germania-titania material is closely matched to the refractive index of a typical liquid crystal material whereby improved optical performance of a liquid crystal based cross-connect optical switching device is achieved.
    Type: Grant
    Filed: July 27, 2001
    Date of Patent: July 27, 2004
    Assignee: Corning Incorporated
    Inventors: Ikerionwu A. Akwani, Robert A. Bellman, Lynn B. Simpson
  • Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
    Publication number: 20040062504
    Abstract: The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a CVD process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.
    Type: Application
    Filed: June 30, 2003
    Publication date: April 1, 2004
    Applicant: Corning Incorporated
    Inventors: Robert Bellman, Ikerionwu A. Akwani, Paul A. Sachenik, Thomas P. Grandi
  • High germanium content waveguide materials
    Publication number: 20020154878
    Abstract: Germanium-silicon oxide, germanium-silicon oxynitride and silica-germania-titania materials and oxynitride materials suitable for fabricating optical waveguides for liquid crystal based cross-connect optical switching devices have a refractive index of from about 1.48 to about 1.52 at 1550 nm, and a coefficient of thermal expansion at room temperature of from about 3×10−6° C.−1 to about 4.4×10−6° C,−1. The compositions are adjusted so that the refractive index of the germanium-silicon oxide, germanium-silicon oxynitride or silica-germania-titania material is closely matched to the refractive index of a typical liquid crystal material whereby improved optical performance of a liquid crystal based cross-connect optical switching device is achieved.
    Type: Application
    Filed: July 27, 2001
    Publication date: October 24, 2002
    Inventors: Ikerionwu A. Akwani, Robert A. Bellman, Lynn B. Simpson