Abstract: A purification and delivery system delivers a high-pressure fluid (e.g., carbon dioxide) to a process area and includes a fluid supply tank with a fluid in a liquid state. A purification section is provided in the system and includes at least one purification unit to remove at least one component from the fluid, and a high-pressure pump is disposed downstream from the fluid supply tank and proximate the process area. The high-pressure pump pressurizes the fluid to a process pressure that is greater than the pressure of the fluid within the fluid supply tank. By providing the high-pressure pump proximate the process area, the distance at which high-pressure fluid must be transported while maintaining required operating temperatures and pressures is minimized.

Abstract: A fluid purification and recovery system includes a buffer section configured to receive a fluid delivered from a process station, where the fluid pressure is maintained within the buffer section within a predetermined range and the fluid is maintained within the buffer section in at least one of a gas state, a liquid state and a supercritical state. The system further includes a purification section disposed downstream from the buffer section to receive the fluid from the buffer section, where the purification section includes at least one purification unit that separates at least a portion of at least one component from the fluid. In one embodiment, the fluid is maintained in at least one of a liquid state and a supercritical state in both the buffer section and the purification section. In addition, the buffer section delivers the fluid to the purification with minimal or substantially no fluctuations in pressure.

Abstract: A thermal decomposition trap includes a trap main body (21) having an inlet port (26) for supplying a gas to be thermally decomposed and an outlet port (27) for exhausting the gas, and a heater (23, 25) for heating the gas supplied in the trap main body (21). An oil trap (28) containing an oil and having an oil discharge port (29) and a valve (V3) connected thereto is formed on a bottom portion of the trap main body (21). Particles generated by thermal decomposition of the gas are precipitated in the oil in the oil trap (28). The oil containing the particles is easily discharged in a short time period by opening the valve (V3) mounted on the oil discharge port (29). An oil-free auxiliary pump is arranged between a reaction chamber and the thermal decomposition trap, whereby a mass flow rate of exhaust from rate in the reaction chamber is not reduced regardless of the arrangement of the thermal decomposition trap.

Abstract: A device for trapping gaseous compounds of refractory metals includes at least a vertically disposed elongated enclosure (1) in the form of a hollow cylindrical member (2), sealingly closed in its upper part via a cover (4), and having a hollow bottom (5) in its lower part. The enclosure is lined in the major part of the height of the member with a heat conductive lining (10) leaving within itself free vertical spaces from top to bottom; The enclosure includes a gas inlet opening (8) below the lower portion of the lining, a gas outlet opening (11) above the lining, a heater and heat insulation.

Abstract: A process for depositing tungsten silicide films on a silicon substrate by chemical vapor deposition, comprises the steps of producing a silicon sub-fluoride by passing SiF.sub.4 over pieces of silicon heated in a tubular oven about 1200.degree.-1500.degree. K., mixing gaseous WF.sub.6 with the silicon sub-fluoride, and then immediately depositing the tungsten silicide films on said silicon substrate.

Abstract: A process and apparatus for treating waste products coming from the manufacture of electronic components. The effluent gases are aspirated by an inert vehicle gas, then intimately mixed with a preheated oxidizing gas, then remain in contact therewith at a sufficient temperature and for a sufficient period of time for the incineration, then the products of oxidation are cooled by thermal exchange to condensation, and the solid products of oxidation are collected and the residual gases washed, and there is realized a cascade of pressure drops along the gaseous current.

Abstract: The present invention concerns a process for the control in real time of the etching in a process for manufacturing electronic components of the type obtained by reacting ionic etching of wafers of silicon utilizing a plasma produced between two electrodes, wherein the gaseous species of the plasma are analyzed during the etching, at least one of the wafers of silicon being removable in situ from the influence of the plasma.The invention also concerns a reactor therefore, comprising a housing under vacuum 31 including at least one support electrode 34 and one electrode 35 connected to ground between which a plasma is produced, means for producing a vacuum, means for loading and unloading wafers, means for introducing etching gas, wherein the reactor comprises at least two locations 40 for wafers 33, means for withdrawing at least one location from the influence of the plasma 37, said means and the locations being movable with respect to one another, and means for analyzing gaseous species of the plasma.