Patents by Inventor Ikuo Soga
Ikuo Soga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190207646Abstract: A pulse position modulation circuit includes a delay path that includes a plurality of delay devices coupled in series with each other, a clock being passed through the plurality of delay devices, and a switching circuit that changes a time by which the clock is delayed in each of the plurality of delay devices according to input data.Type: ApplicationFiled: March 11, 2019Publication date: July 4, 2019Applicant: FUJITSU LIMITEDInventors: Ikuo SOGA, Kazuaki Oishi, Hiroshi Matsumura, Yoichi Kawano, Yasuhiro Nakasha
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Patent number: 10270406Abstract: A power amplifier includes a main amplifier, an auxiliary amplifier, and a control circuit. The main amplifier is configured to amplify input power, and the auxiliary amplifier is configured to amplify the input power when the input power exceeds a certain level. The control circuit, which is provided between a source of the main amplifier and a ground, is configured to control a source potential of the main amplifier so as to increase the source potential when the input power reaches at least a certain value.Type: GrantFiled: July 12, 2017Date of Patent: April 23, 2019Assignee: FUJITSU LIMITEDInventors: Masato Nishimori, Tatsuya Hirose, Ikuo Soga, Masayuki Hosoda, Tadahiro Imada
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Publication number: 20190068180Abstract: A detector circuit includes a first inverter including an input node coupled via a first capacitor to a transmission path for transmitting an AC signal, the first inverter outputting an output voltage in accordance with power of the AC signal, wherein the output voltage increases with increasing temperature, a second inverter including an input node coupled to the transmission path, the second inverter outputting an output voltage in accordance with power of the AC signal, wherein the output voltage decreases with increasing temperature, a third capacitor including one electrode coupled to either an output electrode of the first inverter or an output node of the second inverter, a first resistor coupled between the output node of the first inverter and an output node of the detector circuit, and a second resistor coupled between the output node of the second inverter and the output node of the detector circuit.Type: ApplicationFiled: August 21, 2018Publication date: February 28, 2019Applicant: FUJITSU LIMITEDInventor: Ikuo Soga
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Patent number: 10020797Abstract: A phase shifter includes a first variable amplifier circuit configured to receive and amplify a first signal having a first phase; and a second variable amplifier circuit configured to receive and amplify a second signal having a second phase different from the first phase. The phase shifter is configured to generate an output signal having a desired phase by phase combination of an output of the first variable amplifier circuit and an output of the second variable amplifier circuit, and the first variable amplifier circuit and the second variable amplifier circuit each includes a plurality of amplifier circuit units. The amplifier circuit unit includes a first transistor with a grounded gate and a second transistor with a grounded source, and gains of the first variable amplifier circuit and the second variable amplifier circuit are specified according to the number of amplifier circuit units to be activated.Type: GrantFiled: August 15, 2017Date of Patent: July 10, 2018Assignee: FUJITSU LIMITEDInventor: Ikuo Soga
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Patent number: 9952175Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.Type: GrantFiled: November 16, 2016Date of Patent: April 24, 2018Assignee: FUJITSU LIMITEDInventors: Satoru Momose, Osamu Tsuboi, Ikuo Soga
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Publication number: 20180109244Abstract: A phase shifter includes a first variable amplifier circuit configured to receive and amplify a first signal having a first phase; and a second variable amplifier circuit configured to receive and amplify a second signal having a second phase different from the first phase. The phase shifter is configured to generate an output signal having a desired phase by phase combination of an output of the first variable amplifier circuit and an output of the second variable amplifier circuit, and the first variable amplifier circuit and the second variable amplifier circuit each includes a plurality of amplifier circuit units. The amplifier circuit unit includes a first transistor with a grounded gate and a second transistor with a grounded source, and gains of the first variable amplifier circuit and the second variable amplifier circuit are specified according to the number of amplifier circuit units to be activated.Type: ApplicationFiled: August 15, 2017Publication date: April 19, 2018Applicant: FUJITSU LIMITEDInventor: Ikuo Soga
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Publication number: 20180041177Abstract: A power amplifier includes a main amplifier, an auxiliary amplifier, and a control circuit. The main amplifier is configured to amplify input power, and the auxiliary amplifier is configured to amplify the input power when the input power exceeds a certain level. The control circuit, which is provided between a source of the main amplifier and a ground, is configured to control a source potential of the main amplifier so as to increase the source potential when the input power reaches at least a certain value.Type: ApplicationFiled: July 12, 2017Publication date: February 8, 2018Applicant: FUJITSU LIMITEDInventors: Masato Nishimori, Tatsuya Hirose, Ikuo Soga, Masayuki Hosoda, Tadahiro Imada
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Publication number: 20170336345Abstract: A gas sensor includes a p-type semiconductor layer that contains a compound of copper or silver and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.Type: ApplicationFiled: August 1, 2017Publication date: November 23, 2017Applicant: FUJITSU LIMITEDInventors: Satoru Momose, Osamu Tsuboi, Ikuo Soga
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Patent number: 9806782Abstract: A phase shift circuitry includes: a signal generation circuitry that receives an input signal, and outputs four signals different in phase from each other by 90 degrees based on the input signal, the four signals includes a first signal and a second signal; four variable amplifier circuitry that each includes a transistor, and amplify the four signals individually, with amplification factors based on control voltages supplied to gates of the transistors, the four variable amplifier circuitry include a first amplifier amplifies the first signal by a first control voltage and a second amplifier amplifies the second signal by a second control voltage; a synthetic circuitry that synthesizes output signals of the four variable amplifier circuitry, and outputs a synthesized signal; and a control circuitry supplies voltages, that are equal to or higher than the gate threshold value, to the first amplifier and the second amplifier.Type: GrantFiled: February 2, 2017Date of Patent: October 31, 2017Assignee: FUJITSU LIMITEDInventor: Ikuo Soga
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Publication number: 20170237475Abstract: A phase shift circuitry includes: a signal generation circuitry that receives an input signal, and outputs four signals different in phase from each other by 90 degrees based on the input signal, the four signals includes a first signal and a second signal; four variable amplifier circuitry that each includes a transistor, and amplify the four signals individually, with amplification factors based on control voltages supplied to gates of the transistors, the four variable amplifier circuitry include a first amplifier amplifies the first signal by a first control voltage and a second amplifier amplifies the second signal by a second control voltage; a synthetic circuitry that synthesizes output signals of the four variable amplifier circuitry, and outputs a synthesized signal; and a control circuitry supplies voltages, that are equal to or higher than the gate threshold value, to the first amplifier and the second amplifier.Type: ApplicationFiled: February 2, 2017Publication date: August 17, 2017Applicant: FUJITSU LIMITEDInventor: Ikuo Soga
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Patent number: 9666541Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.Type: GrantFiled: September 18, 2015Date of Patent: May 30, 2017Assignee: FUJITSU LIMITEDInventors: Osamu Tsuboi, Ikuo Soga, Tamotsu Yamamoto
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Publication number: 20170067850Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.Type: ApplicationFiled: November 16, 2016Publication date: March 9, 2017Applicant: FUJITSU LIMITEDInventors: Satoru Momose, Osamu Tsuboi, Ikuo Soga
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Publication number: 20170067847Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.Type: ApplicationFiled: November 16, 2016Publication date: March 9, 2017Applicant: FUJITSU LIMITEDInventors: Satoru Momose, Osamu Tsuboi, Ikuo Soga
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Publication number: 20160013140Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.Type: ApplicationFiled: September 18, 2015Publication date: January 14, 2016Inventors: Osamu Tsuboi, Ikuo Soga, Tamotsu YAMAMOTO
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Patent number: 8958207Abstract: The electronic device includes a heat generator 54, a heat radiator 58, and a heat radiation material 56 disposed between the heat generator 54 and the heat radiator 58 and including a plurality of linear structures 12 of carbon atoms and a filling layer 14 formed of a thermoplastic resin and disposed between the plurality of linear structures 12.Type: GrantFiled: May 7, 2012Date of Patent: February 17, 2015Assignee: Fujitsu LimitedInventors: Yoshitaka Yamaguchi, Taisuke Iwai, Shinichi Hirose, Daiyu Kondo, Ikuo Soga, Yohei Yagishita, Yukie Sakita
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Patent number: 8749979Abstract: The sheet structure includes a plurality of linear structures of carbon atoms, a filling layer filled in gaps between the linear structures for supporting the plurality of linear structures, and a coating film formed over at least one ends of the plurality of linear structures and having a thermal conductivity of not less than 1 W/m·K.Type: GrantFiled: March 17, 2009Date of Patent: June 10, 2014Assignee: Fujitsu LimitedInventors: Taisuke Iwai, Daiyu Kondo, Yoshitaka Yamaguchi, Ikuo Soga, Shinichi Hirose
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Patent number: 8743546Abstract: The sheet structure includes a plurality of linear structure bundles 12 each of which comprises a plurality of linear structures of carbon atoms arranged, spaced from each other at a first gap and which are arranged at a second gap which is larger than the first gap; and a filling layer 14 filled in the first gap and the second gap and supporting the plurality of linear structure bundles 12.Type: GrantFiled: October 21, 2008Date of Patent: June 3, 2014Assignee: Fujitsu LimitedInventors: Taisuke Iwai, Daiyu Kondo, Yoshitaka Yamaguchi, Ikuo Soga, Shinichi Hirose
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Patent number: 8350391Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.Type: GrantFiled: July 31, 2012Date of Patent: January 8, 2013Assignee: Fujitsu LimitedInventors: Daiyu Kondo, Taisuke Iwai, Yoshitaka Yamaguchi, Ikuo Soga
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Publication number: 20120295078Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.Type: ApplicationFiled: July 31, 2012Publication date: November 22, 2012Applicant: FUJITSU LIMITEDInventors: Daiyu Kondo, Taisuke Iwai, Yoshitaka Yamaguchi, Ikuo Soga
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Patent number: 8258060Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.Type: GrantFiled: August 13, 2010Date of Patent: September 4, 2012Assignee: Fujitsu LimitedInventors: Daiyu Kondo, Taisuke Iwai, Yoshitaka Yamaguchi, Ikuo Soga