Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: An RF amplifier module includes PC boards laminated atop a bottom conductor plate. The boards include an RF semi-conductor amplifier chip mounted in a well extending to the bottom plate disposed in electrical connection with the chip.

Abstract: An RF amplifier module includes PC boards laminated atop a bottom conductor plate. The boards include an RF semi-conductor amplifier chip mounted in a well extending to the bottom plate disposed in electrical connection with the chip.

Abstract: A frequency doubler is disclosed in which an input signal is supplied to the respective gates of first and second field effect transistors with a phase difference corresponding to a one half wave of the input signal and a signal of a doubler frequency wave is obtained from the drain of the second field effect transistor.