Abstract: A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.

Abstract: A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.