Abstract: Disclosed is an image generating device, which includes a measurement device including a plurality of transmitters and a plurality of receivers for a multistatic measurement of an object, an image preprocessing device that receives a raw image signal corresponding to the multistatic measurement from the measurement device and generates a preprocessed image signal based on the raw image signal, an image amplifier that generates an amplified image signal based on the preprocessed image signal, and an image restorer that generates a restored image signal corresponding to the object based on the amplified image signal, and the image amplifier is further configured to set up a first virtual transmitter and a first virtual receiver, to obtain first measurement data of a first target transmitter closest to the first virtual transmitter among the plurality of transmitters and a first target receiver closest to the first virtual receiver among the plurality of receivers.

Abstract: Disclosed is an image data generating method. Operations of emitting electromagnetic waves to an object and receiving scan signals scanning the object are performed by using a multi-static transceiver. First image data of a low resolution are generated based on the scan signals. when a first condition associated with the first image data is satisfied, second image data of a high resolution associated with a sub-region of the first image data are generated. When a second condition associated with the second image is satisfied, third image data based on the first image data and the second image data are generated.

Abstract: The present invention discloses a flash memory device, a first well and second well are formed in a substrate, a plurality of memory cell are formed in the second well and arranged in an array having a multiplicity of bit lines and word lines. Voltage is applied to the first well and second well, respectively, with time interval so that an over erasing of the memory cell and lowering of cycling characteristic can be prevented.

Abstract: A flash memory cell, comprising: a composite insulating film formed on a substrate at a predetermined size which charges are trapped or detrapped; a drain formed at one side of the composite insulating film; a source formed a predetermined distance away the other side of the composite insulating film; a program/erasure gate formed on the composite insulating film; an interlayer insulating film for covering the drain, the source and the program/erasure gate; a selecting gate formed on the interlayer insulating film, which is programmable and erasable at low voltages and operable by application of a single power system. In the cell, the low voltages allow peripheral circuit to be designed easily and the chip size to be reduced. Further, the repeating number of the programming and erasing can be markedly increased since the flash memory cell employs a channel erasure manner as well as low powers. It is preventive of overerasure and thus can erase information more quickly.

Abstract: A mass airflow sensor is fabricated on a semiconductor substrate and which includes (1) a dielectric diaphragm, (2) p-etch-stopped silicon rim, (3) thin-film heating and temperature sensing elements, and (4) tapered chip edges. The dielectric diaphragm is formed with thin silicon oxide and silicon nitride in a sandwich structure and provides excellent thermal insulation for the sensing and heating elements of the sensor. The diaphragm dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim to help ensure uniform and reproducible sensor performance.