Patents by Inventor Il-Soo CHOI
Il-Soo CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170266Abstract: The present invention provides a component for a semiconductor device fabrication apparatus, a semiconductor device fabrication apparatus including the same, and a method of fabricating a semiconductor device, wherein the component includes single-crystal silicon, wherein, on at least one surface thereof, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.Type: ApplicationFiled: November 17, 2023Publication date: May 23, 2024Inventors: Hyun Soo LEE, Hae Mi KANG, Do Hyun CHOI, Il Gu YONG, Jong Kyu LEE, Ho Geun HAN, Ju Young SONG
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Patent number: 11947104Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.Type: GrantFiled: September 9, 2020Date of Patent: April 2, 2024Assignees: KOREA BASIC SCIENCE INSTITUTE, INSTITUTE FOR BASIC SCIENCE, GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: I Jong Kim, Ji Yong Bae, Hong Seung Kim, Geon Hee Kim, Ki Soo Chang, Cheonha Jeon, Il Woo Choi, Chang Hee Nam
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Patent number: 11332848Abstract: An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).Type: GrantFiled: January 18, 2019Date of Patent: May 17, 2022Assignee: SK Siltron Co., Ltd.Inventors: Jong Min Kang, Il Soo Choi
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Patent number: 10072352Abstract: An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.Type: GrantFiled: July 10, 2015Date of Patent: September 11, 2018Assignee: SK SILTRON CO., LTD.Inventors: Do Yeon Kim, Il Soo Choi, Yun Ha An
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Publication number: 20170167048Abstract: An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.Type: ApplicationFiled: July 10, 2015Publication date: June 15, 2017Inventors: Do Yeon KIM, Il Soo CHOI, Yun Ha AN
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Patent number: 9534314Abstract: Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.Type: GrantFiled: June 11, 2013Date of Patent: January 3, 2017Assignee: LG SILTRON INCORPORATEDInventors: Il Soo Choi, Jin Woo Ahn, Hak Eui Wang, Yong Jin Kim
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Patent number: 8905290Abstract: A chip mounting apparatus includes a loading unit, a combining unit and a bonding unit. The loading unit loads a circuit board having contact pads and semiconductor chips having solder balls into the chip mounting apparatus. The combining unit positions the semiconductor chip onto a respective mounting area of the circuit board and combines the solder balls of the semiconductor chip with the contact pads of the circuit board by using flux. The combining unit has a flux coater for coating the solder balls with the flux and a flux controller for automatically supplementing the flux to the flux coater. The bonding unit bonds the solder balls to the respective contact pads by a reflow process.Type: GrantFiled: November 25, 2013Date of Patent: December 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Il-Soo Choi, Min Kim, Tae-Ho Moon, Ju-Young Yu, Sung-Bok Hong
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Publication number: 20140205837Abstract: Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.Type: ApplicationFiled: June 11, 2013Publication date: July 24, 2014Inventors: Il Soo CHOI, Jin Woo Ahn, Hak Eui Wang, Yong Jin Kim
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Publication number: 20140191397Abstract: A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have an upper surface protruded from an upper surface of the dummy pad. The plug may be vertically formed in the insulating substrate. The plug may have an upper end exposed through the upper surface of the insulating substrate and connected with the signal pad and the dummy pad, and a lower end exposed through a lower surface of the insulating substrate. Thus, a signal bump may accurately make contact with the protruded upper surface of the signal pad.Type: ApplicationFiled: March 12, 2014Publication date: July 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae-Gyu KANG, Ho-Tae JIN, Tae-ho MOON, Il-Soo CHOI, Jong-Eun LEE
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Publication number: 20140190397Abstract: Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.Type: ApplicationFiled: August 10, 2012Publication date: July 10, 2014Inventors: Jin-Woo Ahn, Bong-Woo Kim, Il-Soo Choi, Do-Yeon Kim
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Publication number: 20140151437Abstract: A chip mounting apparatus includes a loading unit, a combining unit and a bonding unit. The loading unit loads a circuit board having contact pads and semiconductor chips having solder balls into the chip mounting apparatus. The combining unit positions the semiconductor chip onto a respective mounting area of the circuit board and combines the solder balls of the semiconductor chip with the contact pads of the circuit board by using flux. The combining unit has a flux coater for coating the solder balls with the flux and a flux controller for automatically supplementing the flux to the flux coater. The bonding unit bonds the solder balls to the respective contact pads by a reflow process.Type: ApplicationFiled: November 25, 2013Publication date: June 5, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Il-Soo Choi, Min Kim, Tae-Ho Moon, Ju-Young Yu, Sung-Bok Hong
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Patent number: 8698311Abstract: A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have an upper surface protruded from an upper surface of the dummy pad. The plug may be vertically formed in the insulating substrate. The plug may have an upper end exposed through the upper surface of the insulating substrate and connected with the signal pad and the dummy pad, and a lower end exposed through a lower surface of the insulating substrate. Thus, a signal bump may accurately make contact with the protruded upper surface of the signal pad.Type: GrantFiled: August 30, 2012Date of Patent: April 15, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Gyu Kang, Ho-Tae Jin, Tae-ho Moon, Il-soo Choi, Jong-Eun Lee
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Publication number: 20130069229Abstract: A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have an upper surface protruded from an upper surface of the dummy pad. The plug may be vertically formed in the insulating substrate. The plug may have an upper end exposed through the upper surface of the insulating substrate and connected with the signal pad and the dummy pad, and a lower end exposed through a lower surface of the insulating substrate. Thus, a signal bump may accurately make contact with the protruded upper surface of the signal pad.Type: ApplicationFiled: August 30, 2012Publication date: March 21, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae-Gyu KANG, Ho-Tae JIN, Tae-ho MOON, Il-soo CHOI, Jong-Eun LEE
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Publication number: 20120266809Abstract: Provides are an insulation device of a single crystal growth device and a single crystal growth device including the same. The insulation device is installed inside a chamber of the single crystal growth device and the insulation device includes a plurality of insulation blocks that are spaced by a first distance.Type: ApplicationFiled: July 5, 2012Publication date: October 25, 2012Inventors: Sang-Hoon Lee, Hyun-Jung Oh, Il-Soo Choi
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Publication number: 20110079175Abstract: Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein nitrogen is added in the silica of the outer layer.Type: ApplicationFiled: October 6, 2010Publication date: April 7, 2011Inventors: Il-Soo Choi, Ji-Hun Moon, Bong-Woo Kim, Do-Yeon Kim
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Publication number: 20090090295Abstract: Provided is a method for growing a silicon ingot. According to an exemplary method, the method includes charging silicon in a quartz crucible, melting the silicon by heating the quartz crucible and applying a magnetic field of 500 Gauss or higher in the quartz crucible, and growing a single crystalline silicon ingot from the melted silicon while applying a magnetic field lower than 500 Gauss in the quartz crucible. As a result, by appropriately controlling the internal pressure of the quartz crucible or the application time and the magnitude of the magnetic field, it is possible to easily accelerate crystallization of the internal surface of the quartz crucible to thereby prevent flaking of the crystals. Consequently, it is possible to grow the silicon ingot of good properties.Type: ApplicationFiled: September 8, 2008Publication date: April 9, 2009Inventors: Jung-Ha HWANG, Il-Soo CHOI, Sang-Hee KIM