Patents by Inventor Ilya GOYKHMAN

Ilya GOYKHMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11869728
    Abstract: We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: January 9, 2024
    Assignee: CAMBRIDGE ENTERPRISE LIMITED
    Inventors: Shahab Akhavan, Amin Taheri Najafabadi, Ilya Goykhman, Luigi Occhipinti, Andrea Carlo Ferrari
  • Publication number: 20220172905
    Abstract: We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.
    Type: Application
    Filed: April 29, 2020
    Publication date: June 2, 2022
    Inventors: Shahab AKHAVAN, Amin Taheri NAJAFABADI, Ilya GOYKHMAN, Luigi OCCHIPINTI, Andrea Carlo FERRARI
  • Patent number: 10903396
    Abstract: A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: January 26, 2021
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CAMBRIDGE ENTERPRISE LTD.
    Inventors: Michael Engel, Mathias B. Steiner, Andrea C. Ferrari, Antonio Lombardo, Matteo Barbone, Mete Atature, Carmen Palacios Berraquero, Dhiren Manji Kara, Ilya Goykhman
  • Publication number: 20170176780
    Abstract: A waveguide device is provided. The device comprises a semiconductor waveguide structure and at least one charge storing structure. Said at least one charge storing structure is configured to apply selected electric field on the semiconductor waveguide structure to thereby vary refractive index within said semiconductor waveguide structure. Wherein the charge storing structure comprises a charge trapping layer configured for storing charge carriers configured for selectively generating constant electric field of a predetermined magnitude. The device may be used in optical resonators, interferometer for optical and optoelectronic applications, capable of desirably varying refractive index within the waveguide structure.
    Type: Application
    Filed: April 2, 2015
    Publication date: June 22, 2017
    Applicant: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.
    Inventors: Uriel LEVY, Joseph SHAPPIR, Ilya GOYKHMAN, Boris DESIATOV